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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB10N10L G

Name: SPB10N10L G
Brand: Infineon Technologies
SKU: SPB10N10L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB10N10L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB10N10L G.pdf

Description:: MOSFET N-CH 100V 10.3A TO263-3

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Product details

Overview

SPB10N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power transistor in P-TO263-3-2 package, rated for 100 V V_DS, 10.3 A continuous drain current at T_C = 25°C, and 154 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175°C, supports avalanche energy of 60 mJ (single pulse), and is dv/dt rated for robust switching in hard-switched industrial motor drives and DC-DC converters.

For engineers reviewing the SPB10N10L datasheet, SPB10N10L pinout, SPB10N10L application, or SPB10N10L equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (169–210 mΩ), avalanche ruggedness, thermal resistance (R_thJC = 3 K/W), and TO263-3 footprint suitability for high-current PCB layouts.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for low gate charge (Q_g = 17.7–22 nC) and fast switching (t_r = 19.1–28.7 ns, t_f = 17.8–26.7 ns), enabling efficient operation in 100 kHz–500 kHz SMPS and half-bridge motor control stages. Its transconductance (g_fs = 4.7–9.4 S) and gate plateau voltage (~3.8 V) support stable current regulation under varying load conditions.

The integrated body diode features low forward voltage (V_SD = 0.93–1.25 V at I_F = 10.3 A) and controlled reverse recovery (t_rr = 57–71 ns, Q_rr = 126–158 nC), reducing commutation losses in synchronous rectification and freewheeling applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 24/48 V bus systems with 20% margin
R_DS(on) @ V_GS = 10 V	154 mΩ max - Enables ≤1.26 W conduction loss at 8.1 A continuous current
I_D continuous @ T_C = 25°C	10.3 A - Supports >100 W load handling with standard heatsinking
E_AS	60 mJ - Withstands single-pulse inductive energy without failure in relay/motor snubbing
dv/dt rating	6 kV/µs - Immune to false turn-on in high-noise industrial environments
T_j operating range	−55°C to +175°C - Qualified for under-hood automotive and industrial ambient extremes
Q_g	17.7–22 nC - Compatible with low-power gate drivers (e.g., 1-A peak output)

Pinout & Package

SPB10N10L uses the P-TO263-3-2 surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard TO263-3 configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Logic-compatible input (V_GS(th) = 1.2–2.0 V); requires <22 nC total charge for full enhancement
Drain (D)	High-side current path	Exposed copper tab - primary thermal path to PCB; electrically tied to drain potential
Source (S)	Reference node	Low-impedance return path; connects to ground or low-side switch node in half-bridge topologies

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to 4.5 V supply - eliminates need for gate boosters in 5 V microcontroller systems
Avalanche-rated	Guaranteed 60 mJ single-pulse energy withstand - enables reliable operation without external clamping in inductive loads
dv/dt immune	Rated 6 kV/µs - prevents spurious turn-on during fast voltage transients in motor drives and SMPS
High-temperature operation	175°C maximum junction temperature - supports compact designs in sealed enclosures or high-ambient environments
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 175°C - maintains predictable conduction loss across full thermal range

Applications

Motor Control

DC-DC Conversion

Use Scenario: Half-bridge driver for 24 V BLDC fans in HVAC systems with PWM frequency ≥20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f ≤26.7 ns) to minimize shoot-through risk and reduce dead-time requirements.

Use Value: Logic-level gate enables direct MCU GPIO drive; 154 mΩ R_DS(on) limits conduction loss to <1.3 W at 8 A, easing thermal design on 4-layer PCB.

Use Scenario: Synchronous rectifier in isolated 48 V → 12 V flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; body diode used for freewheeling during dead time.

Use Value: V_SD = 0.93–1.25 V and Q_rr = 126–158 nC reduce reverse recovery loss vs. discrete diodes, improving efficiency by ~1.2% at full load.

Industrial Lighting

Power Distribution

Use Scenario: Dimmable LED driver stage controlling constant-current output via PWM dimming at 1–10 kHz.

IC Role / Device Role / Timing Role: High-side switch in buck topology; handles repetitive 10 A pulsed current (I_D(puls) = 42.2 A).

Use Value: Avalanche rating ensures reliability during LED string open-circuit events; 175°C rating allows operation in enclosed luminaires without forced air.

Use Scenario: Hot-swap controller MOSFET in 48 V server backplane power distribution unit (PDU).

IC Role / Device Role / Timing Role: Inrush current limiter and fault protection switch; activated during board insertion and disabled on overcurrent.

Use Value: Low Q_g (≤22 nC) enables fast, controlled turn-on ramp; R_thJC = 3 K/W supports rapid heat transfer to heatsink during sustained 8 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	V_GS(th) = 2–4 V (higher turn-on threshold); R_DS(on) = 44 mΩ @ 10 V but not logic-level optimized	Requires ≥5 V gate drive; less suitable for 3.3 V MCU interfaces	Prefer when higher V_GS margin is acceptable and lower R_DS(on) justifies non-logic-level drive complexity
STP10NK100Z	V_DS = 1000 V (over-spec'd); R_DS(on) = 1.2 Ω - significantly higher conduction loss	Designed for HV AC-DC PFC, not 100 V DC systems	Only consider if system requires >600 V blocking; otherwise inefficient and oversized for this voltage class

Compared with IRF540NPBF and STP10NK100Z, SPB10N10L uniquely balances logic-level compatibility (≤4.5 V), 100 V rating, and sub-160 mΩ R_DS(on), making it optimal for space-constrained 24–48 V industrial power stages where gate drive simplicity and thermal efficiency are co-prioritized.

Availability

SPB10N10L is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, industrial lighting, and power distribution requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPB10N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ power transistor product line targets high-reliability, high-efficiency switching applications in industrial automation, renewable energy inverters, and automotive subsystems-designed for ruggedness, thermal stability, and ease of gate drive integration.

FAQ

Is SPB10N10L suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and full enhancement achievable at V_GS = 4.5 V, SPB10N10L operates reliably with 3.3 V logic outputs when paired with appropriate gate resistor sizing (e.g., ≤10 Ω) to ensure sufficient dV/dt and avoid slow turn-on. R_DS(on) at 4.5 V is 169–210 mΩ, confirming usable conduction performance.

What is the maximum PCB copper area required for thermal compliance at 8.1 A continuous?

Per datasheet Figure 2, at T_C = 100°C and I_D = 8.1 A, the device requires a minimum 6 cm² copper area (single-layer, 70 µm thick) on FR4 PCB with vertical mounting and no forced airflow. This achieves R_thJA ≈ 50 K/W, limiting T_j to ≤150°C under worst-case ambient conditions.

Does SPB10N10L have a guaranteed avalanche energy rating?

Yes. The datasheet specifies E_AS = 60 mJ (single-pulse, I_D = 10.3 A, V_DD = 25 V, R_GS = 25 Ω) with test conditions and waveform defined. This rating is production-tested per Infineon's quality standards and applies across the full −55°C to +175°C junction temperature range.

Can SPB10N10L replace SPB10N10 in existing designs?

Yes, SPB10N10L is a direct replacement for SPB10N10 with identical pinout, package, and electrical specifications. The "L" suffix denotes logic-level gate characteristics (lower V_GS(th) and improved R_DS(on) at low V_GS), enhancing compatibility with 3.3 V/5 V controllers while maintaining backward mechanical and thermal compatibility.

SPB10N10L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 154mOhm @ 8.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 444 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB10N10L G FAQ

1.How can I place an order for SPB10N10L G through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB10N10L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB10N10L G reliable?

The price and inventory of SPB10N10L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB10N10L G is usually 5 days.

3.What payment methods are accepted for SPB10N10L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB10N10L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB10N10L G?

SPB10N10L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB10N10L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB10N10L G?

For technical support, including SPB10N10L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB10N10L G requirements.

6.How does Aetrix verify that SPB10N10L G is sourced from the original manufacturer or authorized distributors?

All SPB10N10L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB10N10L G meets industry standards.

7.What is the process for return or replacement of SPB10N10L G?

All SPB10N10L G units undergo pre-shipment inspection (PSI). If there is an issue with SPB10N10L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB10N10L G part is unused and in its original packaging.

Return procedure for SPB10N10L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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