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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB12N50C3ATMA1

Name: SPB12N50C3ATMA1
Brand: Infineon Technologies
SKU: SPB12N50C3ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB12N50C3ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB12N50C3ATMA1.pdf

Description:: MOSFET N-CH 560V 11.6A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB12N50C3ATMA1 from Infineon Technologies is a 500 V, 11.6 A N-channel CoolMOS™ C3 power MOSFET in PG-TO263 (D²PAK) package, featuring R_DS(on) = 0.38 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 49 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters.

For engineers reviewing the SPB12N50C3ATMA1 datasheet, SPB12N50C3ATMA1 pinout, SPB12N50C3ATMA1 application, or SPB12N50C3ATMA1 equivalent, key selection criteria include its 500 V V_DS, 0.38 Ω R_DS(on), 49 nC total gate charge, 125 W P_tot at T_C = 25 °C, and robust dv/dt immunity (50 V/ns at T_j = 125 °C).

Technical Context

This device implements Infineon's third-generation CoolMOS™ superjunction technology optimized for hard-switched and resonant topologies. Its low effective output capacitance (C_o(er) = 45 pF, C_o(tr) = 92 pF) and high transconductance (g_fs = 8 S) enable fast switching with reduced switching losses and improved EMI behavior.

The MOSFET integrates an optimized body diode with t_rr = 380 ns and Q_rr = 5.5 µC at T_j = 25 °C, supporting ZVS-capable designs and reducing commutation losses in bridge configurations. Its thermal resistance R_thJC = 1 K/W ensures efficient heat transfer to external heatsinks in high-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands 400 V DC-link voltage with 25 % margin in 380–400 V offline applications
R_DS(on)	0.38 Ω @ T_j = 25 °C - Enables ≤1.5 W conduction loss at 7 A continuous drain current
Q_g	49 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers
E_AS	340 mJ - Supports single-pulse avalanche operation under fault conditions without failure
dv/dt	50 V/ns @ T_j = 125 °C - Resists parasitic turn-on in high-noise, high-speed switching environments
t_r/t_f	8 ns / 8 ns - Minimizes switching transition time and associated energy loss in 65–100 kHz SMPS
R_thJC	1 K/W - Allows direct mounting to heatsink for thermal management in ≥100 W power stages

Pinout & Package

SPB12N50C3ATMA1 is housed in PG-TO263 (D²PAK) package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; requires <100 nA leakage current handling per IGSS spec
D	High-voltage drain node	Connected to PCB copper pour for thermal dissipation and high-current return path
S	Source reference and current return	Serves as local ground reference for gate driver; carries full load current (11.6 A continuous)

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 49 nC reduces gate driver power consumption and simplifies drive circuit design
Periodic avalanche rated	EAR = 0.6 mJ enables reliable operation under repetitive overvoltage transients in PFC circuits
Extreme dv/dt immunity	50 V/ns rating prevents false triggering during fast voltage transitions in half-bridge topologies
Low effective output capacitance	C_o(er) = 45 pF minimizes stored energy loss during hard-switching transitions
Optimized body diode	t_rr = 380 ns and Q_rr = 5.5 µC reduce reverse recovery losses in synchronous rectification

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using LLC resonant topology.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–300 kHz with zero-voltage switching.

Use Value: Low Q_g and C_iss = 1200 pF enable precise timing control and reduced dead-time loss.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage.

Use Value: 500 V rating and 11.6 A ID support 400 V AC input with safety margin; R_DS(on) lowers conduction loss vs. older MOSFETs.

Photovoltaic Inverter

EV Onboard Charger

Use Scenario: DC-DC boost stage in string inverter converting 600–1000 V PV array output to 400 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved boost converter with 50–100 kHz switching.

Use Value: Periodic avalanche rating handles lightning-induced surges; low C_oss improves light-load efficiency.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 1 K/W R_thJC supports compact heatsink integration; low Q_gd/Q_g ratio improves ZVS initiation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R041C7	650 V, R_DS(on) = 0.041 Ω, Q_g = 62 nC, TO-220FP package	Higher voltage rating but higher gate charge and larger R_DS(on) at 500 V operation point	Better for 600 V systems; less optimal for 400 V DC-link where SPB12N50C3ATMA1 offers lower conduction loss
STP12NM50N	500 V, R_DS(on) = 0.36 Ω, Q_g = 55 nC, TO-220 package, no avalanche rating	Lacks periodic avalanche capability and has higher gate charge	Lower cost alternative where transient overvoltage protection is handled externally

Compared with IPP65R041C7 and STP12NM50N, SPB12N50C3ATMA1 delivers superior dv/dt immunity (50 V/ns), certified periodic avalanche performance, and lower gate charge-making it preferred for high-reliability, high-frequency 400–450 V DC-link applications requiring robustness and efficiency.

Availability

SPB12N50C3ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, photovoltaic inverters, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for SPB12N50C3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in offline SMPS, PFC, and industrial inverters-designed to replace older planar MOSFETs with superior switching performance and ruggedness.

FAQ

What is the maximum continuous drain current for SPB12N50C3ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO263 package and ensures safe junction temperature operation below 150 °C under typical heatsink conditions.

Does SPB12N50C3ATMA1 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic body diode with t_rr = 380 ns and Q_rr = 5.5 µC at T_j = 25 °C, V_R = 400 V, and dI_F/dt = 100 A/µs. These values are measured under standardized conditions and support design of snubberless or low-loss commutation circuits in bridge topologies.

Can SPB12N50C3ATMA1 be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification due to its relatively high V_SD (1.0–1.2 V) and moderate reverse recovery characteristics. Its body diode is intended for freewheeling and fault clamping, not bidirectional conduction; dedicated low-V_F MOSFETs or Schottky diodes are recommended for SR stages.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2.1 V to 3.9 V at T_j = 25 °C. This narrow window ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with 5 V or 10 V gate drive-no negative bias is required, simplifying isolated gate driver selection.

SPB12N50C3ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB12N50C3ATMA1 FAQ

1.How can I place an order for SPB12N50C3ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB12N50C3ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB12N50C3ATMA1 reliable?

The price and inventory of SPB12N50C3ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB12N50C3ATMA1 is usually 5 days.

3.What payment methods are accepted for SPB12N50C3ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB12N50C3ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB12N50C3ATMA1?

SPB12N50C3ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB12N50C3ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB12N50C3ATMA1?

For technical support, including SPB12N50C3ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB12N50C3ATMA1 requirements.

6.How does Aetrix verify that SPB12N50C3ATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB12N50C3ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB12N50C3ATMA1 meets industry standards.

7.What is the process for return or replacement of SPB12N50C3ATMA1?

All SPB12N50C3ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB12N50C3ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB12N50C3ATMA1 part is unused and in its original packaging.

Return procedure for SPB12N50C3ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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