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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB160N04S2-03

Name: SPB160N04S2-03
Brand: Infineon Technologies
SKU: SPB160N04S2-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB160N04S2-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SPB160N04S2-03.pdf

Description:: 160A, 40V N-CHANNEL, MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB160N04S2-03 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 40 V V_DS, 2.9 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, with 160 A continuous drain current at T_C = 25 °C and 175 °C maximum junction temperature. It is avalanche-rated, dv/dt-rated, and packaged in PG-TO263-7 (D²PAK) for high-current motor control and DC-DC converter primary-side switching.

For engineers reviewing the SPB160N04S2-03 datasheet, SPB160N04S2-03 pinout, SPB160N04S2-03 application, or SPB160N04S2-03 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (810 mJ), gate charge profile (Q_g = 170 nC), thermal resistance (R_thJC = 0.5 K/W), and diode reverse recovery performance (Q_rr = 125 nC).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, high-efficiency power stages. Its 2.3–2.9 mΩ R_DS(on) range supports high-current operation with minimal I²R heating, while the 175 °C rated junction enables compact thermal design in constrained environments.

The device integrates a robust body diode with 160 A continuous forward current capability, 0.9–1.3 V V_SD at 80 A, and 60–75 ns t_rr, enabling synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/36 V battery-fed systems and 48 V intermediate bus applications.
R_DS(on)	2.9 mΩ max at V_GS = 10 V, I_D = 80 A - Enables <1.9 W conduction loss at 80 A, critical for thermally limited PCB layouts.
I_D (cont.)	160 A at T_C = 25 °C - Supports high-current motor drives and server VRMs without parallel devices.
E_AS	810 mJ - Withstands single-pulse inductive energy surges up to 80 A × 25 V without failure, reducing snubber complexity.
Q_g	170 nC - Defines gate drive power requirement; requires ≥2 A peak driver for 100 kHz switching with <32 ns td(on).
t_r/t_f	50–75 ns / 40–60 ns - Enables efficient 100–200 kHz operation in LLC and synchronous buck converters.
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers.
R_thJC	0.5 K/W - Allows direct heatsink mounting to sustain 300 W P_tot at T_C = 25 °C.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and 7-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for channel current	Low-inductance connection point for source loop minimization; tied to PCB ground plane.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-capacitance routing; sensitive to noise coupling.
3 (Drain)	Main power output node	Internally connected to large copper die attach area; must be routed to high-current trace or heatsink.
4 (Source)	Secondary source connection	Reduces source inductance in high-di/dt applications; improves switching consistency.
5 (Source)	Third source connection	Further lowers common-source inductance for multi-phase or paralleled configurations.
6 (Drain)	Secondary drain connection	Enhances current sharing across internal bondwires; reduces localized heating.
7 (Drain)	Third drain connection	Supports >160 A current handling by distributing current across three drain terminals.

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse E_AS ensures ruggedness against inductive load transients without external clamping.
dv/dt immunity	6 kV/µs rating prevents false turn-on during high-speed voltage transitions in half-bridge configurations.
175 °C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient.
Optimized body diode	Q_rr = 125 nC and t_rr = 75 ns support zero-voltage switching in resonant topologies and reduce diode recovery losses.
Thermally enhanced D²PAK-7	Three drain and three source pins plus exposed pad deliver 0.5 K/W R_thJC, enabling 300 W dissipation with minimal heatsink volume.

Applications

Motor Drive Inverter

Server VRM High-Side Switch

Use Scenario: 3-phase BLDC inverter stage in industrial servo drives operating at 20–50 kHz PWM frequency with 100–150 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side power switch in six-pack configuration; handles bidirectional current flow during regeneration.

Use Value: 2.9 mΩ R_DS(on) limits conduction loss to <4.7 W per device at 120 A, while 175 °C rating sustains full current under forced-air-limited cooling.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V server VRM delivering up to 200 A to CPU/GPU rails.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck converter; commutates at 300–500 kHz with tight dead-time control.

Use Value: Low Q_g (170 nC) and fast t_r/t_f enable high-frequency operation with <1.2% gate drive loss, improving overall VRM efficiency above 95%.

Automotive DC-DC Converter

Industrial UPS Inverter

Use Scenario: 12 V/48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles, supporting regenerative braking and start-stop functions.

IC Role / Device Role / Timing Role: Synchronous switch in dual-active-bridge topology; conducts up to 160 A continuously with reverse current capability.

Use Value: Avalanche rating (810 mJ) absorbs energy from transformer leakage inductance during soft-start and fault conditions, eliminating need for external TVS.

Use Scenario: Output inverter stage in 3 kVA industrial uninterruptible power supply, converting 400 V DC bus to 230 V AC with sinusoidal PWM.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; handles 100% duty-cycle freewheeling and high di/dt commutation.

Use Value: Body diode V_SD = 0.9 V at 80 A reduces freewheeling loss by 35% vs. discrete Schottky, improving thermal margin at 50 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S4-02	R_DS(on) = 1.8 mΩ (lower), Q_g = 195 nC (higher), same 40 V rating and TO263-7 package	Better conduction loss but higher gate drive demand; less suitable for ultra-high-frequency designs	Select when thermal budget is tighter than drive capability; verify gate driver peak current ≥2.5 A.
IRFB4115PBF	R_DS(on) = 3.2 mΩ (higher), Q_g = 140 nC (lower), TO220AB package, no avalanche rating	Limited to non-inductive or low-energy applications; lacks dv/dt and avalanche ruggedness	Acceptable only in cost-sensitive, low-reliability consumer applications where transient protection is externally implemented.

Compared with IPB180N04S4-02 and IRFB4115PBF, SPB160N04S2-03 delivers optimal balance of low R_DS(on), moderate Q_g, and full ruggedness features-making it preferred for automotive and industrial inverters where reliability under transient stress is mandatory.

Availability

SPB160N04S2-03 is available at Aetrix Electronics and suitable for motor drive inverters, server VRMs, and automotive DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for SPB160N04S2-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency, high-current power conversion applications-including motor drives, server power supplies, and renewable energy inverters-with emphasis on low R_DS(on), fast switching, and ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the SPB160N04S2-03 supports 100 A continuous drain current, as confirmed by the ID vs. TC derating curve on Page 4 of the datasheet. This reflects thermal limitation due to reduced heat transfer at elevated case temperatures, not electrical degradation.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The SPB160N04S2-03 has a gate threshold voltage range of 2.1–4.0 V and is fully enhanced at V_GS = 0 V. A gate drive of 0 V to 10 V is sufficient; applying negative voltage is unnecessary and may exceed the ±20 V V_GS rating if referenced improperly.

Can the body diode be used for synchronous rectification in a buck converter?

Yes. The integrated body diode supports 160 A continuous forward current and exhibits Q_rr = 125 nC and t_rr = 75 ns, enabling use in synchronous buck topologies up to 300 kHz. However, its V_SD = 0.9–1.3 V is higher than Schottky alternatives, so efficiency gain depends on duty cycle and load current.

Is SPB160N04S2-03 compliant with AEC-Q101 for automotive use?

No. While the device operates up to 175 °C and is used in automotive DC-DC converters, it is not AEC-Q101 qualified. Infineon offers AEC-Q101 variants such as the SPB160N04S2H5, which shares identical electrical specs but includes extended reliability testing and automotive-grade traceability.

SPB160N04S2-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

SPB160N04S2-03 FAQ

1.How can I place an order for SPB160N04S2-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB160N04S2-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB160N04S2-03 reliable?

The price and inventory of SPB160N04S2-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB160N04S2-03 is usually 5 days.

3.What payment methods are accepted for SPB160N04S2-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB160N04S2-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB160N04S2-03?

SPB160N04S2-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB160N04S2-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB160N04S2-03?

For technical support, including SPB160N04S2-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB160N04S2-03 requirements.

6.How does Aetrix verify that SPB160N04S2-03 is sourced from the original manufacturer or authorized distributors?

All SPB160N04S2-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB160N04S2-03 meets industry standards.

7.What is the process for return or replacement of SPB160N04S2-03?

All SPB160N04S2-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPB160N04S2-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB160N04S2-03 part is unused and in its original packaging.

Return procedure for SPB160N04S2-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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