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Infineon Technologies SPB160N04S2L03DTMA1

Name: SPB160N04S2L03DTMA1
Brand: Infineon Technologies
SKU: SPB160N04S2L03DTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB160N04S2L03DTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SPB160N04S2L03DTMA1.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

SPB160N04S2L03DTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-263-7 (D²PAK) package, rated for 40 V V_DS, 2.1 mΩ R_DS(on) at V_GS = 10 V and 80 A, with 160 A continuous drain current at T_C = 25 °C and 175 °C maximum junction temperature. It is avalanche-rated and dv/dt-rated for robust switching in high-current DC-DC converters and motor drives.

For engineers reviewing the SPB160N04S2L03DTMA1 datasheet, SPB160N04S2L03DTMA1 pinout, SPB160N04S2L03DTMA1 application, or SPB160N04S2L03DTMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, pulsed current capability (640 A), thermal resistance (R_thJC = 0.5 K/W), and integrated reverse diode performance (V_SD = 0.9 V at 80 A).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in synchronous rectification and high-efficiency power stages. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The MOSFET features fully characterized dynamic parameters including Q_g = 170–230 nC, Q_gd = 60–90 nC, and C_iss = 6000–8000 pF at V_DS = 25 V, supporting precise gate driver sizing and EMI-aware layout. Its 810 mJ single-pulse avalanche energy rating ensures ruggedness under inductive load switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 10 V	2.1–2.7 mΩ - Enables <1 W conduction loss at 160 A continuous operation with forced cooling
I_D (continuous)	160 A @ T_C = 25 °C - Supports high-current output stages in server VRMs and battery-powered inverters
E_AS	810 mJ - Withstands single-pulse inductive energy without failure in motor control H-bridges
R_thJC	0.5 K/W - Allows >240 W power dissipation with modest heatsinking (e.g., 10 °C/W system thermal path)
Q_g	170–230 nC - Determines gate driver peak current requirement (~2 A for 100 ns turn-on with 1.1 Ω R_G)
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers

Pinout & Package

Package: TO-263-7 (D²PAK) with exposed drain pad; thermally enhanced SMD version designed for PCB copper area cooling (6 cm² recommended).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power source terminal	Low-inductance connection point for return path; tied to PCB ground plane
2 (Gate)	Control input	High-impedance MOSFET gate requiring low-noise routing and local decoupling
3 (Drain)	Main power output	Exposed metal pad - primary thermal path to PCB copper; electrically connected to drain
4–7 (Source)	Parallel source terminals	Multiple low-resistance source connections reduce package inductance and improve current sharing

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 3.3 V systems
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., under-hood automotive)
Avalanche-rated (E_AS = 810 mJ)	Guarantees safe operation during unclamped inductive switching without external snubbers
dv/dt ruggedness (6 kV/µs)	Prevents false turn-on in high-speed half-bridge configurations with fast voltage transients
Integrated body diode with low V_SD	V_SD = 0.9–1.3 V at 80 A - reduces freewheeling loss in synchronous buck and LLC resonant converters

Applications

Automotive DC-DC Converters

Server Voltage Regulator Modules (VRMs)

Use Scenario: 12 V to 1 V step-down conversion in ADAS ECUs with tight thermal constraints.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter topology.

Use Value: 2.1 mΩ R_DS(on) minimizes conduction loss at 160 A per phase, enabling >95% efficiency at full load.

Use Scenario: Core power delivery for AI accelerators requiring transient response <1 µs.

IC Role / Device Role / Timing Role: Low-side switch in interleaved 6-phase VRM with 1 MHz switching frequency.

Use Value: 60–90 nC Q_gd and 170–230 nC Q_g support fast, controllable edge rates while limiting gate drive power.

Industrial Motor Drives

Battery-Powered Inverters

Use Scenario: 24 V BLDC motor controller for robotic joints with regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated freewheeling diode conduction.

Use Value: 810 mJ E_AS withstands back-EMF spikes during rapid deceleration without clamping circuits.

Use Scenario: 48 V to 350 V DC-AC inverter for portable energy storage systems.

IC Role / Device Role / Timing Role: High-current output stage switch in unidirectional power flow architecture.

Use Value: 175 °C T_jmax and 0.5 K/W R_thJC allow sustained 160 A operation with passive heatsinking only.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB160N04S203ATMA1	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in marking and tape-and-reel packaging	No functional difference; suitable for same PCB footprint and thermal design	Select when standard reel packaging (not DTMA1's tray) is required for automated assembly
IRFB4115PBF	Higher R_DS(on) (3.2 mΩ), higher Q_g (220 nC), TO-220AB package, no avalanche rating	Limited to lower-current (<100 A) and non-avalanche-critical applications due to missing E_AS spec	Use only if board space allows TO-220 mounting and thermal budget permits +0.5 mΩ conduction loss

Compared with IPB160N04S203ATMA1, SPB160N04S2L03DTMA1 offers identical electrical performance but in tray packaging for prototyping or low-volume builds; versus IRFB4115PBF, it delivers 24% lower R_DS(on), guaranteed avalanche ruggedness, and superior thermal performance in surface-mount form factor.

Availability

SPB160N04S2L03DTMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPB160N04S2L03DTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 40 V product line, engineered specifically for high-current, high-efficiency power conversion in automotive and computing applications where low R_DS(on), logic-level drive, and thermal robustness are critical.

FAQ

What is the maximum allowable gate-source voltage for SPB160N04S2L03DTMA1?

The absolute maximum V_GS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to ≤ ±15 V, especially under transient conditions or elevated temperature.

Does SPB160N04S2L03DTMA1 require a gate resistor for stability?

Yes - a gate resistor (typically 1–10 Ω) is required to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies R_G = 1.1 Ω for dynamic characterization; actual value depends on switching speed requirements and driver capability, with lower values increasing dV/dt and EMI risk.

Can SPB160N04S2L03DTMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface to ensure uniform temperature rise across devices.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 160 A continuous forward current at T_C = 25 °C and exhibits V_SD = 0.9–1.3 V at 80 A. However, for highest efficiency, synchronous rectification using the channel is preferred; the diode serves as a robust fallback during dead-time or fault conditions.

SPB160N04S2L03DTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

SPB160N04S2L03DTMA1 FAQ

1.How can I place an order for SPB160N04S2L03DTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB160N04S2L03DTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB160N04S2L03DTMA1 reliable?

The price and inventory of SPB160N04S2L03DTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB160N04S2L03DTMA1 is usually 5 days.

3.What payment methods are accepted for SPB160N04S2L03DTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB160N04S2L03DTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB160N04S2L03DTMA1?

SPB160N04S2L03DTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB160N04S2L03DTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB160N04S2L03DTMA1?

For technical support, including SPB160N04S2L03DTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB160N04S2L03DTMA1 requirements.

6.How does Aetrix verify that SPB160N04S2L03DTMA1 is sourced from the original manufacturer or authorized distributors?

All SPB160N04S2L03DTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB160N04S2L03DTMA1 meets industry standards.

7.What is the process for return or replacement of SPB160N04S2L03DTMA1?

All SPB160N04S2L03DTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB160N04S2L03DTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB160N04S2L03DTMA1 part is unused and in its original packaging.

Return procedure for SPB160N04S2L03DTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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