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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB20N60S5ATMA1

Name: SPB20N60S5ATMA1
Brand: Infineon Technologies
SKU: SPB20N60S5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB20N60S5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB20N60S5ATMA1.pdf

Description:: MOSFET N-CH 600V 20A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,665

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Product details

Overview

SPB20N60S5 from Infineon Technologies is a 600 V, 20 A CoolMOS™ superjunction N-channel power MOSFET in PG-TO263 (D²PAK) package, featuring R_DS(on) = 0.19 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 79–103 nC), and periodic avalanche rating up to 690 mJ. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters.

For engineers reviewing the SPB20N60S5 datasheet, SPB20N60S5 pinout, SPB20N60S5 application, or SPB20N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 0.6 K/W junction-to-case thermal resistance, 600 V V_DS rating, body diode reverse recovery charge (Q_rr = 12 µC), and suitability for hard-switched 65–100 kHz flyback and LLC resonant topologies.

Technical Context

This device implements Infineon's 5th-generation CoolMOS™ superjunction architecture, optimized for reduced conduction and switching losses simultaneously. Its low effective output capacitance (C_o(er) = 83 pF, C_o(tr) = 160 pF) and high transconductance (g_fs = 12 S) enable fast, controlled turn-on/turn-off with minimal voltage overshoot under high dv/dt stress.

The MOSFET supports repetitive avalanche operation (I_AR = 20 A, E_AR = 1 mJ) and features an integrated robust body diode with t_rr = 610 ns and V_SD = 1.0–1.2 V at I_F = 20 A, enabling reliable freewheeling in asymmetric half-bridge and active-clamp configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage (e.g., 400 V DC bus + 50% margin) in universal-input offline converters
R_DS(on)	0.19 Ω @ 25 °C - Enables <1.5 W conduction loss at 20 A continuous drain current in TO263 footprint
Q_g	79–103 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers (e.g., 1-A peak)
E_AS	690 mJ - Supports single-pulse inductive energy absorption without failure during startup or overload
dv/dt Rating	20 V/ns - Immune to false triggering in high-noise environments such as motor drives and industrial inverters
R_thJC	0.6 K/W - Enables >150 W power dissipation with moderate heatsinking (e.g., 25 cm² aluminum plate)
t_r/t_f	25 ns / 30–45 ns - Supports efficient 100 kHz+ switching with low switching loss and EMI

Pinout & Package

SPB20N60S5 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Accepts 0–10 V logic-level drive; requires <100 nC total charge for full enhancement
Drain (D)	High-voltage power node	Exposed copper tab - electrically and thermally connected to internal die drain; must be soldered to PCB copper pour
Source (S)	Reference return path	Low-inductance connection point for gate driver return and current sensing; ties to power ground

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 79–103 nC enables fast, low-loss switching with minimal gate driver stress
Periodic avalanche rated	Rated for repetitive 1 mJ avalanche energy (E_AR) - supports robust operation in inductive load switching
Extreme dv/dt immunity	20 V/ns rating prevents spurious turn-on during high-slew transient events in bridge circuits
Low effective output capacitance	C_o(er) = 83 pF reduces stored energy loss during hard-switching transitions
Enhanced body diode	Q_rr = 12 µC and t_rr = 610 ns support soft-recovery behavior in ZVS/ZCS topologies

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 90–264 V AC input with 80 PLUS Titanium efficiency target.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost PFC stage, switching at 65–100 kHz.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, directly improving full-load efficiency by ≥0.4% vs. prior-gen MOSFETs.

Use Scenario: 3.3 kW industrial motor drive front-end with active rectification and harmonic filtering.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved dual-boost PFC, handling 20 A RMS input current at 70 kHz.

Use Value: 20 V/ns dv/dt rating ensures stable operation despite high common-mode noise from adjacent IGBT modules.

Solar Microinverter DC-DC Stage

EV Onboard Charger (OBC) Isolation Stage

Use Scenario: String-level microinverter converting 30–60 V DC PV output to 230 V AC grid interface via two-stage conversion.

IC Role / Device Role / Timing Role: Primary switch in high-frequency isolated DC-DC stage (LLC resonant topology, 200–500 kHz).

Use Value: Low C_iss/C_oss and fast t_r/t_f minimize dead-time losses and improve zero-voltage switching margin.

Use Scenario: Bidirectional OBC in 11 kW Level 2 EV charger, supporting both AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) isolation stage, operating at 100–200 kHz with synchronous rectification.

Use Value: Periodic avalanche capability handles inductive kickback during bidirectional current reversal without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R017C7	650 V, 0.017 Ω R_DS(on), higher Q_g (125 nC), same D²PAK package	Better conduction loss at <10 A; higher switching loss above 75 kHz due to larger Q_g	Prefer for low-frequency, high-current PFC; avoid in >100 kHz resonant converters
STP20NM60ND	600 V, 0.22 Ω R_DS(on), no avalanche rating, lower Q_g (55 nC)	Limited ruggedness in inductive switching; unsuitable for unclamped inductive loads	Select only for cost-sensitive, non-avalanche-critical applications with tight gate drive budgets

Compared with IPW60R017C7 and STP20NM60ND, SPB20N60S5 delivers optimal balance of avalanche ruggedness, switching speed, and thermal performance in 65–150 kHz industrial SMPS - making it preferred where reliability under transient overloads and consistent high-frequency efficiency are jointly required.

Availability

SPB20N60S5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for SPB20N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

SPB20N60S5 belongs to the CoolMOS™ S5 product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating at 65–300 kHz with stringent thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPB20N60S5 supports 13 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO263 package and silicon die, not gate drive capability. Operation above this current requires forced cooling or pulse-width limitation to maintain T_j ≤ 150 °C.

Does SPB20N60S5 require a negative gate voltage for reliable turn-off?

No. SPB20N60S5 has a gate threshold voltage (V_GS(th)) of 3.5–5.5 V and is fully enhanced at V_GS = 10 V. A gate drive range of 0 V to +10 V is sufficient for robust switching; negative bias is unnecessary and not recommended per datasheet guidelines.

Can SPB20N60S5 replace older CoolMOS™ variants like S3 or S4 in existing designs?

Yes - SPB20N60S5 is a direct drop-in replacement for SPB20N60S3/S4 in most cases, sharing identical PG-TO263 package, pinout, and voltage rating. However, its lower R_DS(on) and higher Q_g may require gate driver strength verification and minor layout optimization for optimal EMI performance.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The body diode Q_rr is 12 µC under standard test conditions (V_R = 350 V, I_F = 20 A, di_F/dt = 100 A/µs). This value is critical for estimating commutation losses in half-bridge and synchronous rectifier applications and is confirmed in the Electrical Characteristics table on page 3 of the datasheet.

SPB20N60S5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 103 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB20N60S5ATMA1 FAQ

1.How can I place an order for SPB20N60S5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB20N60S5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB20N60S5ATMA1 reliable?

The price and inventory of SPB20N60S5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB20N60S5ATMA1 is usually 5 days.

3.What payment methods are accepted for SPB20N60S5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB20N60S5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB20N60S5ATMA1?

SPB20N60S5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB20N60S5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB20N60S5ATMA1?

For technical support, including SPB20N60S5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB20N60S5ATMA1 requirements.

6.How does Aetrix verify that SPB20N60S5ATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB20N60S5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB20N60S5ATMA1 meets industry standards.

7.What is the process for return or replacement of SPB20N60S5ATMA1?

All SPB20N60S5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB20N60S5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB20N60S5ATMA1 part is unused and in its original packaging.

Return procedure for SPB20N60S5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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