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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB21N10

Name: SPB21N10
Brand: Infineon Technologies
SKU: SPB21N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB21N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB21N10.pdf

Description:: MOSFET N-CH 100V 21A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,805

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Product details

Overview

SPB21N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 21 A continuous drain current at T_C = 25 °C, and 80 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175 °C junction temperature, features avalanche rating (E_AS = 130 mJ), and is RoHS-compliant - used in DC-DC converters, motor control stages, and industrial power switching.

For engineers reviewing the SPB21N10 datasheet, SPB21N10 pinout, SPB21N10 application, or SPB21N10 equivalent, key selection criteria include its 100 V breakdown voltage, 65–80 mΩ on-resistance range, 21 A thermal-current capability, dv/dt ruggedness (6 kV/µs), and TO263-3 footprint compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs planar SIPMOS technology optimized for low conduction loss and robust unclamped inductive switching (UIS). Its gate threshold voltage (2.1–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 6.2 V gate plateau supports stable Miller region control during switching transitions.

The device integrates a fast, soft-recovery body diode (t_rr = 65–81.5 ns, Q_rr = 153–192 nC) and exhibits low dynamic capacitances (C_iss = 650–865 pF, C_oss = 140–186 pF), enabling efficient high-frequency hard-switching in SMPS and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V bus and 100 V industrial input systems.
R_DS(on) max	80 mΩ at V_GS = 10 V, I_D = 15 A - Limits conduction loss to ≤18 W at 15 A, enabling thermally constrained PCB designs.
I_D cont	21 A at T_C = 25 °C - Delivers high pulsed current capability; derates to 15 A at T_C = 100 °C per thermal limits.
E_AS	130 mJ single-pulse avalanche energy - Supports reliable operation under inductive load switching without external snubbers.
dv/dt rating	6 kV/µs - Resists false triggering during fast voltage transients in noisy motor drive or converter environments.
t_r/t_f	Rise time 56–84 ns, fall time 23–35 ns - Enables >500 kHz switching in hard-switched topologies with controlled EMI.
Q_g	28.9–38.4 nC total gate charge - Determines gate driver strength requirement (~1–2 A peak for <100 ns transition).

Pinout & Package

SPB21N10 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal dissipation. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring low-inductance routing and 10 V drive for full enhancement.
Pin 3 (Drain)	Power output (D)	Connected to large copper pour for heat transfer; electrically tied to package backside metal tab.

Key Features

Feature	Design Value
Avalanche-rated operation	130 mJ single-pulse energy handling enables robustness in inductive switching without derating.
High-temperature capability	Rated for continuous operation up to 175 °C junction temperature - supports sealed or high-ambient enclosures.
Low gate charge	Q_g ≤38.4 nC reduces gate driver losses and simplifies 500 kHz+ PWM design.
Soft-recovery body diode	t_rr ≤81.5 ns and Q_rr ≤192 nC minimize switching loss and ringing in synchronous rectification.
Pb-free & RoHS compliant	Fully compliant with EU RoHS Directive 2011/65/EU - qualified for industrial and consumer production.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side or low-side switching element controlling phase current with PWM at 20–100 kHz.

Use Value: 21 A current rating and 80 mΩ R_DS(on) enable compact heatsinkless designs up to 500 W output.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V flyback or forward converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch handling 100 kHz–300 kHz switching with 100 V clearance margin.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during transformer leakage spikes.

UPS Battery Switch

Solar Charge Controller

Use Scenario: Bidirectional battery disconnect and reverse-current protection in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Low-loss series pass switch with integrated body diode conducting charging current.

Use Value: Soft-recovery diode (Q_rr ≤192 nC) minimizes cross-conduction loss during mode transitions.

Use Scenario: MPPT buck-stage switch in 100 V-class photovoltaic charge controllers for off-grid cabins.

IC Role / Device Role / Timing Role: High-efficiency main switch operating at 100–200 kHz with wide input voltage swing.

Use Value: 100 V V_DS rating accommodates PV open-circuit voltages up to 95 V with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	Higher R_DS(on) (44 mΩ min, 65 mΩ typ), lower ID (33 A), TO-220 package	Lacks avalanche rating and dv/dt ruggedness; unsuitable for inductive hard-switching	Prefer where cost sensitivity outweighs reliability requirements and thermal budget allows larger heatsink
STP22NF10	Same V_DS (100 V), higher R_DS(on) (85 mΩ max), TO-220 package, no specified E_AS	Lower thermal performance (R_thJC = 2.5 K/W vs. 1.7 K/W); not rated for repetitive UIS	Acceptable only in non-critical linear or low-duty-cycle switching where avalanche stress is absent

Compared with IRF540NPBF and STP22NF10, SPB21N10 delivers superior thermal resistance (1.7 K/W), guaranteed avalanche energy (130 mJ), and higher dv/dt immunity - making it the preferred choice for industrial motor drives and high-reliability DC-DC converters where layout-induced transients are present.

Availability

SPB21N10 is available at Aetrix Electronics and suitable for industrial motor drives, solar charge controllers, and UPS battery switches requiring stable component supply across multi-year production cycles.

Supply support for SPB21N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The SIPMOS™ power transistor product line targets high-efficiency, high-reliability power conversion - designed specifically for industrial motor control, renewable energy inverters, and uninterruptible power supplies demanding ruggedness and thermal stability.

FAQ

What is the maximum safe operating temperature for SPB21N10?

The SPB21N10 has a specified junction temperature range of –55 °C to +175 °C. Its absolute maximum continuous operating temperature is 175 °C, validated by thermal characterization and UIS testing. Derating curves show usable current drops to 15 A at case temperature 100 °C, requiring adequate PCB copper area (≥6 cm²) for thermal management.

Does SPB21N10 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. For typical 10 V gate drive and 21 A switching, a 10–22 Ω series resistor is recommended. This balances switching speed (reducing t_r/t_f) against gate driver stress and EMI, especially given the device's 38.4 nC Q_g and low C_iss/C_oss ratio.

Can SPB21N10 be used in parallel configurations?

Yes, SPB21N10 supports paralleling due to its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C above 25 °C), which promotes current sharing. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the integrated body diode has characterized soft recovery (t_rr = 65–81.5 ns, Q_rr = 153–192 nC) and low forward voltage (V_SD = 0.94–1.25 V at 21 A), making it viable for synchronous rectification in medium-frequency (100–300 kHz) buck converters where external Schottky replacement is impractical.

SPB21N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 44µA

Gate Charge (Qg) (Max) @ Vgs:: 38.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB21N10 FAQ

1.How can I place an order for SPB21N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB21N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB21N10 reliable?

The price and inventory of SPB21N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB21N10 is usually 5 days.

3.What payment methods are accepted for SPB21N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB21N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB21N10?

SPB21N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB21N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB21N10?

For technical support, including SPB21N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB21N10 requirements.

6.How does Aetrix verify that SPB21N10 is sourced from the original manufacturer or authorized distributors?

All SPB21N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB21N10 meets industry standards.

7.What is the process for return or replacement of SPB21N10?

All SPB21N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPB21N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB21N10 part is unused and in its original packaging.

Return procedure for SPB21N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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