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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB21N10 G

Name: SPB21N10 G
Brand: Infineon Technologies
SKU: SPB21N10 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB21N10 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB21N10 G.pdf

Description:: MOSFET N-CH 100V 21A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB21N10 G from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 21 A continuous drain current at T_C = 25°C, and 80 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175°C junction temperature, features avalanche rating (E_AS = 130 mJ), and is RoHS-compliant - used in high-reliability DC-DC converters and motor control half-bridges.

For engineers reviewing the SPB21N10 G datasheet, SPB21N10 G pinout, SPB21N10 G application, or SPB21N10 G equivalent, key selection criteria include its 6 kV/µs dv/dt capability, 1.7 K/W R_thJC, integrated body diode with 65–81.5 ns t_rr, and gate charge profile (Q_g = 28.9–38.4 nC) critical for switching loss optimization in 100 kHz–500 kHz SMPS designs.

Technical Context

This MOSFET employs a trench-based SIPMOS™ process optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its 100 V breakdown voltage supports 48 V industrial bus systems, while the 175°C maximum junction temperature enables operation in sealed enclosures without forced air cooling.

The device integrates a fast, soft-recovery body diode (t_rr = 65–81.5 ns, Q_rr = 153–192 nC) and exhibits stable R_DS(on) over temperature (240 mΩ typ at T_j = 175°C, I_D = 15 A), making it suitable for synchronous rectification and bidirectional power flow in isolated DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V nominal input systems with ≥2× safety margin against transients
R_DS(on) max	80 mΩ at V_GS = 10 V, T_j = 25°C - enables ≤1.7 W conduction loss at 15 A DC
I_D cont	21 A at T_C = 25°C - requires heatsink for >10 A continuous operation at ambient
E_AS	130 mJ single-pulse avalanche energy - withstands inductive kickback in relay/motor drive snubberless designs
dv/dt rating	6 kV/µs - ensures noise-immune operation in high-di/dt environments like H-bridge PWM
Q_g	28.9–38.4 nC - determines gate driver peak current requirement (~2.5 A for 15 ns rise time)
t_r/t_f	56–84 ns / 23–35 ns - sets minimum practical switching period for <500 kHz hard-switched converters

Pinout & Package

SPB21N10 G uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source connection	Low-side reference node; ties to PCB ground plane for EMI control and thermal path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and ringing
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper pad on underside - must be soldered to ≥6 cm² copper area for R_thJA = 40 K/W

Key Features

Feature	Design Value
Avalanche-rated operation	130 mJ single-pulse energy handling without failure - eliminates need for external clamping in inductive loads
175°C maximum junction temperature	Enables full 21 A rating in sealed industrial enclosures without active cooling
RoHS-compliant & lead-free	Meets EU Directive 2011/65/EU; compatible with standard Pb-free reflow profiles (peak 260°C)
Fast body diode recovery	t_rr = 65–81.5 ns with soft recovery - reduces voltage overshoot and EMI in synchronous buck freewheeling

Applications

Industrial Motor Drive

Telecom DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC actuators and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element with synchronous rectification during PWM off-time.

Use Value: 80 mΩ R_DS(on) limits conduction loss to <1.8 W at 15 A, enabling >96% efficiency at full load.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for base station power supplies.

IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched power transistor with integrated avalanche ruggedness.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during transformer leakage spikes, improving system reliability.

Automotive Body Control Module

UPS Inverter Stage

Use Scenario: Load switch for 12 V battery-fed solenoids and lamps in BCMs meeting AEC-Q101 stress requirements.

IC Role / Device Role / Timing Role: Robust N-channel high-side switch (with charge pump) controlling resistive/inductive loads.

Use Value: 175°C T_jmax allows operation in engine bay environments without derating under sustained 15 A load.

Use Scenario: Output stage switch in online UPS inverters converting 380 V DC bus to 230 V AC via full-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-tolerant MOSFET handling repetitive inductive energy return during dead-time transitions.

Use Value: 130 mJ E_AS absorbs stored inductor energy without snubber, reducing component count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP21NM10	R_DS(on) = 85 mΩ (typ), lower Q_g (25 nC), TO-220 package	Limited to lower-power applications due to higher thermal resistance (R_thJC = 2.5 K/W)	Prefer for cost-sensitive, lower-current (<12 A) designs where SMT assembly is not required
IRF540NPBF	V_DS = 100 V, R_DS(on) = 44 mΩ, but no avalanche rating or dv/dt spec	Not qualified for inductive switching without external protection; unsuitable for snubberless motor drives	Select only for purely resistive loads or where external clamping is acceptable

Compared with STP21NM10 and IRF540NPBF, SPB21N10 G delivers superior thermal performance (R_thJC = 1.7 K/W), guaranteed avalanche ruggedness, and industry-leading dv/dt immunity - making it the preferred choice for compact, high-reliability industrial and telecom power stages.

Availability

SPB21N10 G is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for SPB21N10 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ power MOSFET product line targets high-efficiency, high-reliability power conversion in harsh thermal and electrical environments - particularly for industrial automation, renewable energy, and transportation systems.

FAQ

What is the maximum allowable gate-source voltage for SPB21N10 G?

The absolute maximum V_GS is ±20 V per datasheet Rev 2.2. Operation above +20 V risks irreversible gate oxide damage; recommended drive is 10–15 V for optimal R_DS(on) and safe margin. Gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching.

Does SPB21N10 G require a gate resistor, and what value is recommended?

Yes - a gate resistor (R_G) is required to control dV/dt and suppress oscillation. For 100–300 kHz operation with typical 2 A gate drivers, R_G = 10–22 Ω balances switching speed and EMI. Lower values increase peak gate current and risk ringing; higher values slow turn-on/off and raise switching losses.

Can SPB21N10 G be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Use individual gate resistors (≤5 Ω difference), symmetrical PCB traces, and Kelvin source connections to ensure current sharing. Thermal coupling via shared heatsink is essential - mismatched R_DS(on) temperature coefficients cause current hogging above 125°C.

Is SPB21N10 G suitable for linear (analog) operation, such as constant-current regulation?

No - it is optimized for switching, not linear mode. Continuous operation in the ohmic region causes localized hot-spot formation and thermal runaway due to positive R_DS(on) temperature coefficient and limited Safe Operating Area (SOA) at low V_DS. Use dedicated linear regulators or bipolar transistors for analog biasing.

SPB21N10 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 44µA

Gate Charge (Qg) (Max) @ Vgs:: 38.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB21N10 G FAQ

1.How can I place an order for SPB21N10 G through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB21N10 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB21N10 G reliable?

The price and inventory of SPB21N10 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB21N10 G is usually 5 days.

3.What payment methods are accepted for SPB21N10 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB21N10 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB21N10 G?

SPB21N10 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB21N10 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB21N10 G?

For technical support, including SPB21N10 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB21N10 G requirements.

6.How does Aetrix verify that SPB21N10 G is sourced from the original manufacturer or authorized distributors?

All SPB21N10 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB21N10 G meets industry standards.

7.What is the process for return or replacement of SPB21N10 G?

All SPB21N10 G units undergo pre-shipment inspection (PSI). If there is an issue with SPB21N10 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB21N10 G part is unused and in its original packaging.

Return procedure for SPB21N10 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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