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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB21N10T

Name: SPB21N10T
Brand: Infineon Technologies
SKU: SPB21N10T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB21N10T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB21N10T.pdf

Description:: MOSFET N-CH 100V 21A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,144

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Product details

Overview

SPB21N10T from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-263-3 (D²PAK) package, rated for 100 V V_DS, 21 A continuous drain current at T_C = 25°C, and R_DS(on) ≤ 45 mΩ at V_GS = 10 V. It serves as a main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB21N10T datasheet, SPB21N10T pinout, SPB21N10T application, or SPB21N10T equivalent, key selection criteria include its low gate charge (Q_G = 34 nC), fast switching capability (t_fall = 23 ns), and avalanche-rated ruggedness (E_AS = 270 mJ) for reliable operation in hard-switched topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench gate design. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling robust gate drive compatibility with 3.3 V and 5 V logic controllers.

The device features integrated body diode with soft recovery characteristics (t_rr = 55 ns, Q_rr = 45 nC), minimizing voltage overshoot during commutation in synchronous rectification and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche breakdown; supports 48 V bus systems with 2× safety margin.
I_D (continuous)	21 A @ T_C = 25°C - Sustained load current capability with standard heatsinking on PCB copper area.
R_DS(on)	≤ 45 mΩ @ V_GS = 10 V - Low conduction loss enables <1.0 W dissipation at 10 A, reducing thermal design burden.
Q_G	34 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers like 1EDN7512B.
E_AS	270 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive turn-off stress without external snubbers.
t_fall	23 ns - Fast drain fall time enables >500 kHz switching in resonant and hard-switched SMPS designs.

Pinout & Package

SPB21N10T uses the TO-263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 10.0 mm × 14.9 mm × 4.4 mm and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; Miller plateau at ~3.5 V.
2 (Drain)	High-side switch node	Connected to high-voltage rail; electrically tied to exposed metal tab for thermal conduction and EMI shielding.
3 (Source)	Power return path	Reference node for gate drive; forms common source connection in low-side configuration or floating source in high-side.

Key Features

Feature	Design Value
OptiMOS™ 5 process	Enables 20% lower R_DS(on) × Q_G figure-of-merit vs. prior generation, improving efficiency in 100–300 kHz converters.
Avalanche-rated	Guaranteed single-pulse E_AS = 270 mJ allows operation without derating in inductive load switching without snubber circuits.
Fast body diode	Soft-recovery t_rr = 55 ns and low Q_rr = 45 nC reduce switching losses and EMI in synchronous rectifiers.
TO-263-3 thermal design	Exposed drain pad enables direct thermal coupling to PCB ground plane, achieving R_θJA = 40 K/W with 25 cm² 2-oz copper.

Applications

DC-DC Buck Converter

BLDC Motor Inverter Stage

Use Scenario: 48 V input to 12 V/20 A output in telecom power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz PWM frequency.

Use Value: 45 mΩ R_DS(on) limits conduction loss to 0.9 W at full load, enabling compact heatsink-free design.

Use Scenario: 3-phase inverter driving 500 W fan motor in HVAC system.

IC Role / Device Role / Timing Role: Low-side power switch in each leg, commutated with 10 kHz PWM and dead-time control.

Use Value: 34 nC Q_G allows use of low-power gate drivers (e.g., IRS2007), reducing driver BOM cost and layout complexity.

Industrial LED Driver

Automotive Body Control Module

Use Scenario: Constant-current buck driver for 24 V, 3 A LED string in street lighting.

IC Role / Device Role / Timing Role: Main switching element modulated at 100 kHz to regulate average current.

Use Value: Avalanche rating ensures reliability during LED open-circuit transients without added protection components.

Use Scenario: Load switch for 12 V accessory circuit (e.g., power window motor) with reverse-battery protection.

IC Role / Device Role / Timing Role: High-side switch controlled by microcontroller GPIO with integrated charge pump.

Use Value: 100 V V_DS withstands load-dump pulses up to ISO 7637-2 Pulse 5a (120 V/100 ms), eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM10	R_DS(on) = 50 mΩ @ 10 V; Q_G = 42 nC; no specified E_AS rating.	Lacks guaranteed avalanche ruggedness; requires external clamping in inductive switching.	Prefer SPB21N10T where unclamped inductive switching occurs.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V but higher Q_G = 71 nC; t_fall = 50 ns.	Slower switching increases losses above 100 kHz; unsuitable for high-frequency SMPS.	Choose SPB21N10T for >200 kHz operation or tighter thermal constraints.

Compared with STP20NM10 and IRF540NPBF, SPB21N10T delivers superior switching efficiency (lower Q_G/t_fall) and guaranteed avalanche robustness-critical for automotive and industrial motor drives where fault transients are frequent and uncontrolled.

Availability

SPB21N10T is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, and industrial LED drivers requiring stable component supply across production lifecycles.

Supply support for SPB21N10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

SPB21N10T belongs to the OptiMOS™ 5 power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power supplies and motor control systems.

FAQ

What is the maximum junction temperature for SPB21N10T?

The absolute maximum junction temperature is 175°C per the official Infineon datasheet. Derating begins at T_J > 150°C, and thermal design must ensure steady-state T_J remains below this limit under worst-case ambient and power dissipation conditions.

Does SPB21N10T support gate drive from a 3.3 V microcontroller?

No-its V_GS(th) minimum is 2.0 V, but full enhancement requires ≥10 V to achieve rated R_DS(on). Driving with 3.3 V results in R_DS(on) > 200 mΩ and excessive conduction loss; a level-shifted or boosted gate driver is required.

Is SPB21N10T suitable for linear mode (analog) operation?

No-it is optimized for switching operation only. Linear mode operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) rating beyond pulse widths >100 µs at V_DS > 30 V.

What is the recommended PCB footprint for TO-263-3 mounting?

Infineon recommends a 10.0 mm × 14.9 mm copper pad with thermal vias (≥8 × 0.3 mm diameter) connecting to inner-layer ground planes. Minimum solder mask opening matches the drain tab outline; solder paste stencil aperture should be 100% coverage with 0.15 mm thickness.

SPB21N10T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 44µA

Gate Charge (Qg) (Max) @ Vgs:: 38.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB21N10T FAQ

1.How can I place an order for SPB21N10T through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB21N10T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB21N10T reliable?

The price and inventory of SPB21N10T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB21N10T is usually 5 days.

3.What payment methods are accepted for SPB21N10T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB21N10T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB21N10T?

SPB21N10T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB21N10T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB21N10T?

For technical support, including SPB21N10T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB21N10T requirements.

6.How does Aetrix verify that SPB21N10T is sourced from the original manufacturer or authorized distributors?

All SPB21N10T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB21N10T meets industry standards.

7.What is the process for return or replacement of SPB21N10T?

All SPB21N10T units undergo pre-shipment inspection (PSI). If there is an issue with SPB21N10T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB21N10T part is unused and in its original packaging.

Return procedure for SPB21N10T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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