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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB35N10

Name: SPB35N10
Brand: Infineon Technologies
SKU: SPB35N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB35N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB35N10.pdf

Description:: MOSFET N-CH 100V 35A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB35N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in P-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 44 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175 °C junction temperature, features avalanche rating (E_AS = 245 mJ), and supports high dv/dt (6 kV/µs), making it suitable for industrial motor drives and DC-DC converter primary-side switching.

For engineers reviewing the SPB35N10 datasheet, SPB35N10 pinout, SPB35N10 application, or SPB35N10 equivalent, key selection criteria include its 100 V breakdown voltage, low on-resistance with thermal stability, TO263-3 package thermal performance (R_thJC = 1 K/W), avalanche ruggedness, and gate charge profile (Q_g = 49–65 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for low R_DS(on) and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 6.1 V gate plateau voltage reflects stable Miller region behavior during switching transitions.

The device integrates a fast, soft-recovery body diode (t_rr = 80–100 ns, Q_rr = 230–290 nC) and exhibits low output capacitance (C_oss = 245–326 pF) and reverse transfer capacitance (C_rss = 137–206 pF), enabling efficient high-frequency operation in SMPS and synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V and 72 V bus systems with margin.
R_DS(on) max	44 mΩ at V_GS = 10 V, I_D = 26.4 A - Enables low conduction loss in high-current switching nodes.
I_D cont	35 A at T_C = 25 °C - Supports high-power load switching when heatsinked per TO263 thermal guidelines.
E_AS	245 mJ single-pulse avalanche energy - Provides inherent ruggedness against inductive switching transients without external snubbers.
dv/dt rating	6 kV/µs - Resists false turn-on in noisy high-dv/dt environments like half-bridge motor control.
Q_g	49–65 nC - Determines gate drive power requirement and switching speed trade-off in PWM applications.
t_r/t_f	63–95 ns / 23–34 ns - Enables sub-100 ns switching transitions for >200 kHz SMPS designs.

Pinout & Package

P-TO263-3-2 (D²PAK) package with exposed drain pad for enhanced thermal dissipation. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires soldering the drain tab to a large copper area (≥6 cm²) on FR4 PCB for specified R_thJA = 40 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10 V drive for full enhancement; sensitive to ESD (±20 V absolute max).
Pin 2 (D)	Drain terminal	Main high-side current path; electrically connected to exposed metal tab for thermal and electrical grounding.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current; forms return path for body diode conduction.

Key Features

Feature	Design Value
Avalanche-rated operation	245 mJ single-pulse energy withstand enables reliable inductive load switching without derating.
High-temperature capability	Rated for continuous operation up to 175 °C junction temperature, supporting compact thermal design.
Low gate charge	Q_g ≤ 65 nC reduces driver losses and improves efficiency in high-frequency converters.
Fast body diode	t_rr ≤ 100 ns and soft recovery minimize voltage overshoot and EMI in freewheeling paths.
dv/dt immune	6 kV/µs rating prevents spurious turn-on in bridge configurations with steep voltage edges.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 35 A peak phase current at 20–50 kHz PWM frequency.

Use Value: Avalanche ruggedness eliminates need for external clamping diodes; low R_DS(on) reduces I²R losses at full load.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback or forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch conducting 35 A pulsed current with 100 V blocking capability across transformer primary.

Use Value: 6 kV/µs dv/dt immunity prevents false triggering during transformer reset; fast t_r/t_f enables high-frequency operation.

Solar Microinverters

Automotive DC-AC Inverters

Use Scenario: DC link switching in single-phase microinverter power stage converting PV panel output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Bridge leg MOSFET operating at 40–100 kHz with bidirectional current flow via body diode during dead-time.

Use Value: Soft-recovery body diode (Q_rr = 230–290 nC) minimizes switching loss and EMI during zero-voltage switching transitions.

Use Scenario: On-board charger (OBC) DC-AC inverter stage converting battery DC to AC for auxiliary loads or vehicle-to-grid (V2G) export.

IC Role / Device Role / Timing Role: High-reliability switching device in 100 V-class inverter leg, operating continuously at elevated ambient temperatures.

Use Value: 175 °C T_j rating supports operation in under-hood environments; TO263 package provides mechanical robustness and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 40 mΩ typ, TO220 package, lower E_AS (190 mJ), no dv/dt rating specified	Limited to lower-stress switching; unsuitable for high dv/dt or repetitive avalanche conditions	Prefer SPB35N10 where avalanche ruggedness or surface-mount assembly is required.
IRF3205	V_DS = 55 V, R_DS(on) = 8 mΩ, TO220, higher ID but lower voltage rating	Not usable in 100 V systems; only applicable in ≤48 V DC bus designs	Select SPB35N10 for 100 V applications requiring both voltage headroom and thermal robustness.

Compared with STP35NF10 and IRF3205, the SPB35N10 offers superior voltage rating, certified avalanche capability, and TO263 packaging for improved thermal management-critical for high-reliability industrial and automotive inverters where margin and ruggedness are non-negotiable.

Availability

SPB35N10 is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, DC-DC converters, and automotive on-board chargers requiring stable component supply and long-term manufacturability.

Supply support for SPB35N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

The SIPMOS™ power transistor product line targets high-efficiency, high-reliability switching applications in industrial automation, renewable energy, and transportation, emphasizing ruggedness, thermal performance, and system-level robustness.

FAQ

What is the maximum allowable gate-source voltage for SPB35N10?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V or –5 V for guaranteed turn-off. Gate drive circuits must include clamping or Zener protection to prevent transient overvoltage.

Does SPB35N10 require a gate resistor, and what value is typical?

Yes-a gate resistor is required to control dV/dt and suppress ringing. Typical values range from 5 Ω to 22 Ω, depending on driver strength and layout parasitics. Lower values (5–10 Ω) enable faster switching but increase EMI risk; higher values (15–22 Ω) reduce overshoot and oscillation at the cost of increased switching loss.

Can SPB35N10 be used in parallel configurations?

Yes, but only with careful attention to gate drive symmetry, source inductance matching, and thermal coupling. The positive temperature coefficient of R_DS(on) supports current sharing, but layout-induced imbalances can cause thermal runaway. Use Kelvin-source connections and individual gate resistors for reliable paralleling.

Is the body diode in SPB35N10 suitable for synchronous rectification?

No-the body diode is optimized for freewheeling, not reverse conduction. Its Q_rr and t_rr are designed for low-loss commutation, not low forward voltage. For synchronous rectification, use a dedicated low-V_F Schottky or MOSFET with optimized body diode characteristics, or implement active gate control to minimize reverse recovery stress.

SPB35N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 26.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB35N10 FAQ

1.How can I place an order for SPB35N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB35N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB35N10 reliable?

The price and inventory of SPB35N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB35N10 is usually 5 days.

3.What payment methods are accepted for SPB35N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB35N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB35N10?

SPB35N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB35N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB35N10?

For technical support, including SPB35N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB35N10 requirements.

6.How does Aetrix verify that SPB35N10 is sourced from the original manufacturer or authorized distributors?

All SPB35N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB35N10 meets industry standards.

7.What is the process for return or replacement of SPB35N10?

All SPB35N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPB35N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB35N10 part is unused and in its original packaging.

Return procedure for SPB35N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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