Infineon Technologies SPB42N03S2L-13 G

Overview

SPB42N03S2L-13 from Infineon Technologies is a 30 V, 42 A N-channel logic-level enhancement-mode MOSFET in TO-263-3 (D²PAK) package, optimized for high-efficiency DC-DC converters and motor control stages where low R_DS(on) (12.9 mΩ max at V_GS=10 V) and robust avalanche capability (110 mJ single-pulse) are critical. It operates up to 175 °C and features 6 kV/µs dv/dt immunity.

For engineers reviewing the SPB42N03S2L-13 datasheet, SPB42N03S2L-13 pinout, SPB42N03S2L-13 application, or SPB42N03S2L-13 equivalent, key selection criteria include its 14.5–19.6 mΩ R_DS(on) at 4.5 V gate drive, 22.9–30.5 nC total gate charge, 850–1130 pF input capacitance, 1.2–1.8 K/W junction-to-case thermal resistance, and SMD-compatible TO-263-3-2 footprint with drain-connected tab.

Technical Context

This OptiMOS® power transistor uses trench-gate silicon technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with reduced conduction and switching losses in synchronous buck converters and half-bridge motor drivers. Its logic-level gate threshold (1.2–2.0 V) ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs.

The device integrates an avalanche-rated body diode with 24–31 ns reverse recovery time and 18–23 nC Q_rr, supporting hard-switched topologies. Thermal design leverages the TO-263-3-2 package's low R_thJC (1.2–1.8 K/W) and compatibility with 6 cm² PCB copper area for effective heat dissipation under continuous 42 A load.

Key Specifications

Pinout & Package

SPB42N03S2L-13 uses the P-TO263-3-2 (D²PAK) surface-mount package with exposed drain tab on the underside for thermal and electrical connection to PCB copper. The three terminals are arranged in a single row: Gate (left), Source (center), Drain (right/tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL40B215PBF and STL220N3LLH6, SPB42N03S2L-13 delivers optimal balance of low R_DS(on), moderate Q_g, industry-leading dv/dt immunity, and SMD thermal performance-making it preferred for compact, high-reliability 24 V motor and power conversion designs.

Availability

SPB42N03S2L-13 is available at Aetrix Electronics and suitable for motor control stages, DC-DC synchronous buck converters, and automotive body control modules requiring stable component supply and long-term industrial availability.

Supply support for SPB42N03S2L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPB42N03S2L-13 belongs to the OptiMOS® family, engineered specifically for high-efficiency, high-power-density power conversion and motor drive applications demanding low R_DS(on), fast switching, and ruggedness in harsh environments.

FAQ

What is the maximum continuous drain current for SPB42N03S2L-13 at 100 °C case temperature?

The maximum continuous drain current remains 42 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects the device's bondwire-limited current capacity, independent of junction temperature derating, and assumes adequate PCB copper area and airflow.

Does SPB42N03S2L-13 require a gate resistor for safe operation in a 500 kHz buck converter?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen ringing and control dV/dt during switching transitions. The 22.9–30.5 nC total gate charge and 1–2 Ω intrinsic gate resistance necessitate external series resistance to limit peak gate current and prevent driver overstress at 500 kHz.

Can SPB42N03S2L-13 replace a through-hole TO-220 MOSFET in an existing PCB layout?

No-it uses the surface-mount P-TO263-3-2 (D²PAK) package with an exposed drain tab that requires rework of the PCB footprint, solder stencil, and thermal pad design. Direct substitution is not mechanically or thermally feasible without board revision.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 20.5 nC, measured at V_R = 15 V, I_F = I_S = 42 A, di_F/dt = 100 A/µs, and T_C = 25 °C. This value directly impacts commutation losses in synchronous rectification and half-bridge freewheeling paths.