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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB47N10

Name: SPB47N10
Brand: Infineon Technologies
SKU: SPB47N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB47N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB47N10.pdf

Description:: MOSFET N-CH 100V 47A TO263-3

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Inventory:6,011

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Product details

Overview

SPB47N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in P-TO263-3-2 package, rated for 100 V V_DS, 47 A continuous drain current at T_C = 25 °C, and 33 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature, features avalanche-rated ruggedness (E_AS = 400 mJ), and is used in high-efficiency DC-DC converters and motor control half-bridges.

For engineers reviewing the SPB47N10 datasheet, SPB47N10 pinout, SPB47N10 application, or SPB47N10 equivalent, key selection criteria include its 6 kV/µs dv/dt rating, 105 nC total gate charge, 1.5 V reverse diode forward voltage at 94 A, thermal resistance R_thJC = 0.85 K/W, and compatibility with 10 V gate drive in industrial switching circuits.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for low R_DS(on) and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard logic-level or 10 V gate drivers, while the 2500 pF input capacitance (C_iss) and 43.5 nC Q_gd support controlled switching transitions in hard-switched topologies.

The device integrates a fast-recovery body diode with t_rr = 100–150 ns and Q_rr = 400–600 nC, enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external diode supplementation. Its SOA curve supports DC, 10 ms, and 100 µs pulse operation up to 100 V and 47 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with 2× transient margin.
R_DS(on)	33 mΩ max at V_GS = 10 V, I_D = 33 A - Determines conduction loss: ~0.36 W at 33 A, critical for thermal design.
I_D (cont.)	47 A at T_C = 25 °C - Defines heatsink sizing baseline; derates to 33 A at T_C = 100 °C.
E_AS	400 mJ single-pulse avalanche energy - Enables robustness against inductive kickback in relay/motor drive snubberless designs.
dv/dt rating	6 kV/µs - Ensures immunity to false turn-on during high-slew-rate commutation in noisy industrial environments.
Q_g	105 nC max - Directly impacts gate driver power requirement and switching speed trade-off in 100 kHz+ SMPS.
R_thJC	0.85 K/W - Enables direct junction-to-heatsink thermal path; allows ≤100 °C ΔT rise at 175 W dissipation.

Pinout & Package

P-TO263-3-2 (D²PAK) package: surface-mount, isolated drain tab, standard footprint for automated assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configuration.
Pin 2 (Gate)	Control terminal (G)	High-impedance MOSFET gate; requires <20 V absolute max rating; drives with 10 V for full R_DS(on) specification.
Pin 3 (Drain)	Power output (D)	Exposed copper drain tab - electrically and thermally connected to die; must be soldered to large PCB copper area for thermal and current handling.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed 400 mJ single-pulse E_AS - eliminates need for external clamping in inductive load switching.
High dv/dt immunity	6 kV/µs rated - prevents spurious turn-on in high-noise motor drive or industrial PLC outputs.
Extended temperature range	−55 °C to +175 °C operating - supports under-hood automotive and high-ambient industrial applications.
Low gate charge	Q_g = 105 nC max - reduces gate driver losses and enables efficient 100–500 kHz switching in SMPS.
Fast body diode	t_rr = 100–150 ns, Q_rr = 400–600 nC - minimizes reverse recovery loss in synchronous rectifier and half-bridge freewheeling.

Applications

Motor Drive Half-Bridge

Industrial DC-DC Converter

Use Scenario: High-current BLDC motor phase leg in HVAC blowers or conveyor drives.

IC Role / Device Role / Timing Role: Low-side switching element in complementary PWM-controlled half-bridge; handles 47 A peak phase current.

Use Value: 33 mΩ R_DS(on) limits conduction loss to <0.75 W at 47 A, reducing heatsink size by >30% vs. higher-R_DS(on) alternatives.

Use Scenario: Primary-side switch in isolated 48 V–12 V telecom DC-DC module.

IC Role / Device Role / Timing Role: Hard-switched 100 kHz flyback or forward converter primary switch with 100 V blocking.

Use Value: 6 kV/µs dv/dt rating ensures stable operation despite transformer leakage spikes, eliminating gate snubbers.

UPS Inverter Stage

Solar Charge Controller

Use Scenario: Bidirectional 48 V battery inverter output stage delivering 2 kW continuous power.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch in H-bridge inverter leg.

Use Value: Body diode t_rr ≤ 150 ns and Q_rr ≤ 600 nC reduce switching loss by 18% vs. discrete Schottky + MOSFET solutions.

Use Scenario: MPPT buck-stage switch in 10 A solar charge controller for off-grid cabins.

IC Role / Device Role / Timing Role: High-duty-cycle, high-temperature switch managing PV array current into 48 V battery bank.

Use Value: 175 °C T_jmax and 0.85 K/W R_thJC enable full 47 A rating even in sealed enclosures at 65 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F6	R_DS(on) = 22 mΩ @ 10 V (lower), Q_g = 85 nC (lower), but only 150 °C T_jmax	Better efficiency at high frequency; unsuitable for >150 °C ambient or sustained avalanche stress	Prefer when thermal margin exists and switching loss dominates; avoid in sealed high-temp enclosures.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V (higher), E_AS not specified, T_jmax = 175 °C same	Higher conduction loss (~30% more at 47 A); no guaranteed avalanche rating	Acceptable for cost-sensitive non-critical loads where avalanche robustness is not required.

Compared with STP48N10F6 and IRF540NPBF, SPB47N10 delivers balanced performance: superior avalanche ruggedness and high-temperature reliability versus STP48N10F6's efficiency edge, and verified UIS capability versus IRF540NPBF's unspecified stress tolerance-making it optimal for industrial motor drives and UPS inverters demanding both thermal headroom and fault resilience.

Availability

SPB47N10 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for SPB47N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The SIPMOS™ power transistor product line targets high-reliability industrial and automotive power switching, emphasizing ruggedness, thermal stability, and ease of gate drive integration.

FAQ

What is the maximum gate-source voltage for SPB47N10?

The absolute maximum V_GS is ±20 V per datasheet. Operation above ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) performance, with 12–15 V acceptable if series gate resistance limits peak current during switching transients.

Does SPB47N10 require a gate resistor, and what value is typical?

Yes-a gate resistor is mandatory to control dV/dt and prevent oscillation. For 100 kHz switching with a 2 A gate driver, a 4.7 Ω resistor is typical (per datasheet test condition). Lower values increase switching speed but raise EMI risk; higher values reduce losses but increase switching time and heat.

Can SPB47N10 be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. Use identical gate resistors, symmetrical PCB traces, and shared heatsinking to ensure thermal balance across paralleled devices.

Is the SPB47N10 RoHS-compliant and halogen-free?

Yes-Infineon certifies SPB47N10 as RoHS-compliant and halogen-free per IEC 61249-2-21. The P-TO263-3-2 package uses lead-free matte tin plating on terminals and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/85% RH.

SPB47N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB47N10 FAQ

1.How can I place an order for SPB47N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB47N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB47N10 reliable?

The price and inventory of SPB47N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB47N10 is usually 5 days.

3.What payment methods are accepted for SPB47N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB47N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB47N10?

SPB47N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB47N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB47N10?

For technical support, including SPB47N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB47N10 requirements.

6.How does Aetrix verify that SPB47N10 is sourced from the original manufacturer or authorized distributors?

All SPB47N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB47N10 meets industry standards.

7.What is the process for return or replacement of SPB47N10?

All SPB47N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPB47N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB47N10 part is unused and in its original packaging.

Return procedure for SPB47N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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