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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB47N10L

Name: SPB47N10L
Brand: Infineon Technologies
SKU: SPB47N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB47N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB47N10L.pdf

Description:: MOSFET N-CH 100V 47A TO263-3

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Product details

Overview

SPB47N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 47 A continuous drain current at T_C = 25 °C, and 26 mΩ R_DS(on) at V_GS = 10 V. It supports high-reliability motor drive, DC-DC converter, and industrial switching applications with avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature.

For engineers reviewing the SPB47N10L datasheet, SPB47N10L pinout, SPB47N10L application, or SPB47N10L equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V, robust unclamped inductive switching performance (E_AS = 400 mJ), and thermal resistance of 0.85 K/W (junction-to-case).

Technical Context

This MOSFET employs a trench-based SIPMOS process optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while its 2000–2500 pF input capacitance and 24 nC Q_gd support efficient gate driving with moderate external R_G.

The device features integrated body diode with 1.1–1.5 V forward voltage at 94 A and 80–120 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives. Its SOA curve is characterized up to 100 µs pulse width with DC, 1 ms, and 10 ms boundaries defined for safe operation under transient overload.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V bus systems with 2× safety margin
R_DS(on) @ V_GS = 10 V	26 mΩ max - Enables ≤1.3 W conduction loss at 47 A, reducing heatsink requirements
I_D continuous @ T_C = 25 °C	47 A - Supports high-current loads such as BLDC motor phases or server VRMs
E_AS	400 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
dv/dt rating	6 kV/µs - Resists false triggering during fast voltage transients in noisy industrial environments
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient-temperature industrial settings
Q_g	135 nC max - Determines gate driver peak current requirement (~2.7 A for 50 ns rise time)

Pinout & Package

SPB47N10L uses PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard D²PAK footprint: Gate (left), Drain (center pad), Source (right).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts logic-level voltage (≥3.3 V) to fully enhance channel; requires <100 nA leakage current handling
Drain (D)	Main current output terminal	Connected to PCB copper pour (≥6 cm²) for thermal dissipation; electrically tied to package backside metal
Source (S)	Reference and return path	Serves as common reference for gate drive and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with microcontrollers and gate drivers without level-shifting
Avalanche-rated	Rated for repetitive unclamped inductive switching (E_AS = 400 mJ) - eliminates need for external snubbers in many flyback/motor circuits
High dv/dt immunity	6 kV/µs rating prevents spurious turn-on during fast voltage transitions in half-bridge configurations
Low R_DS(on) at 4.5 V	40 mΩ max at V_GS = 4.5 V supports efficient operation with 5 V supply rails and reduces gate drive power loss
Thermal robustness	R_thJC = 0.85 K/W allows >150 W power dissipation with modest heatsinking - suitable for compact industrial modules

Applications

Motor Drive

DC-DC Converter

Use Scenario: 3-phase BLDC motor control in HVAC blowers and industrial pumps operating from 24–48 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in inverter leg; switched at 10–20 kHz with PWM dead-time control.

Use Value: Low R_DS(on) minimizes I²R losses during continuous conduction mode; avalanche rating handles back-EMF spikes during commutation.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V synchronous buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch in hard-switched topology; driven by dedicated gate driver with 5 V logic interface.

Use Value: 26 mΩ R_DS(on) limits conduction loss to <1.5 W at full load; 6 kV/µs dv/dt immunity suppresses shoot-through risk during high dV/dt transitions.

Industrial Power Supply

Lighting Ballast

Use Scenario: Output stage switch in 500 W industrial AC-DC front-end with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and main DC link switch; operated in continuous conduction mode.

Use Value: Integrated body diode with 1.1 V V_SD reduces freewheeling loss; 175 °C T_j max supports sealed enclosure operation without derating.

Use Scenario: Dimmable LED driver using buck-boost topology for street lighting with 100–277 V AC input.

IC Role / Device Role / Timing Role: High-efficiency primary switch controlling constant-current LED string; switched at 50–100 kHz.

Use Value: Low gate charge (135 nC) enables fast switching with minimal driver loss; avalanche rating absorbs line surge transients per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F7	R_DS(on) = 22 mΩ @ 10 V; lower Q_g (105 nC); TO-220FP package	Higher thermal resistance (R_thJC = 1.2 K/W); less suitable for SMT-only assembly	Preferred where through-hole mounting and slightly lower R_DS(on) outweigh SMT advantages
IRF540N	V_GS(th) = 2–4 V; R_DS(on) = 44 mΩ @ 10 V; no avalanche rating	Lacks E_AS spec and dv/dt immunity - requires external clamping in inductive loads	Cost-sensitive legacy designs where avalanche robustness is not required

Compared with STP48N10F7 and IRF540N, SPB47N10L offers superior thermal performance in SMT form factor, guaranteed avalanche capability, and tighter gate threshold for predictable logic-level turn-on - making it optimal for space-constrained, high-reliability industrial switching.

Availability

SPB47N10L is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and industrial power supply applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for SPB47N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ power transistor product line targets high-efficiency, high-reliability switching in motor control, power conversion, and industrial automation - emphasizing ruggedness, thermal performance, and logic-level compatibility.

FAQ

What is the maximum gate-source voltage rating for SPB47N10L?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, keep V_GS between 4.5 V and 15 V - the device achieves full enhancement at 4.5 V and maintains stable R_DS(on) up to 10 V. Transient overshoot must be clamped below ±20 V using Zener diodes or gate resistors.

Does SPB47N10L require a gate resistor, and what value is recommended?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control switching speed. For 47 A operation with 135 nC Q_g, a 10 Ω resistor yields ~13.5 A peak current and ~135 ns rise time. Lower values increase EMI risk; higher values raise switching losses. Layout parasitics must also be minimized to avoid oscillation.

Can SPB47N10L replace SPB47N10 in existing designs?

No - SPB47N10L is not a drop-in replacement for SPB47N10. The "L" suffix denotes logic-level gate threshold (1.2–2.0 V), whereas SPB47N10 has standard threshold (2–4 V). Substituting without adjusting gate drive voltage may cause incomplete turn-on, excessive R_DS(on), and thermal runaway. Verify gate drive compliance before replacement.

Is SPB47N10L suitable for use in synchronous rectification?

Yes - its integrated body diode has V_SD = 1.1–1.5 V at 94 A and t_rr = 80–120 ns, supporting synchronous rectification in buck and flyback converters up to 100 kHz. However, for optimal efficiency, external Schottky or MOSFET synchronous rectifiers are preferred above 50 kHz due to lower forward voltage and faster recovery than the internal diode.

SPB47N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB47N10L FAQ

1.How can I place an order for SPB47N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB47N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB47N10L reliable?

The price and inventory of SPB47N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB47N10L is usually 5 days.

3.What payment methods are accepted for SPB47N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB47N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB47N10L?

SPB47N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB47N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB47N10L?

For technical support, including SPB47N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB47N10L requirements.

6.How does Aetrix verify that SPB47N10L is sourced from the original manufacturer or authorized distributors?

All SPB47N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB47N10L meets industry standards.

7.What is the process for return or replacement of SPB47N10L?

All SPB47N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPB47N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB47N10L part is unused and in its original packaging.

Return procedure for SPB47N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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