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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB70N10L

Name: SPB70N10L
Brand: Infineon Technologies
SKU: SPB70N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB70N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB70N10L.pdf

Description:: MOSFET N-CH 100V 70A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,896

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Product details

Overview

SPB70N10L from Infineon Technologies is an N-channel logic-level SIPMOS™ power MOSFET in TO-263-3 (D²PAK) package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 16 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and dv/dt ruggedness-designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB70N10L datasheet, SPB70N10L pinout, SPB70N10L application, or SPB70N10L equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (≤25 mΩ), robust unclamped inductive switching capability (E_AS = 700 mJ), and thermal resistance of 0.6 K/W junction-to-case.

Technical Context

This MOSFET employs planar SIPMOS technology with optimized cell layout for low on-resistance and fast switching. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers, while the 3630 pF input capacitance and 160–240 nC total gate charge support controlled edge rates in hard-switched topologies.

The device integrates a co-packaged body diode with 1.2–1.8 V forward voltage at 140 A and 100–150 ns reverse recovery time-enabling synchronous rectification and freewheeling in buck converters and H-bridge motor controllers without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	10–16 mΩ - enables ≤1.12 W conduction loss at 70 A continuous
R_DS(on) @ V_GS = 4.5 V	14–25 mΩ - ensures full enhancement with 3.3 V microcontroller GPIOs
I_D (continuous)	70 A @ T_C = 25 °C - requires heatsink design for >50 A sustained operation
E_AS	700 mJ - withstands single-pulse inductive energy without failure in motor phase-legs
dv/dt rating	6 kV/µs - suppresses false turn-on during high-slew-rate commutation
T_j(max)	175 °C - allows operation in sealed industrial enclosures without active cooling
R_thJC	0.6 K/W - mandates direct copper pour under drain pad for thermal path integrity

Pinout & Package

SPB70N10L uses the P-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad on the underside. The three terminals are arranged in a single-row configuration compatible with automated reflow assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts logic-level voltage; requires <10 nF gate driver output impedance to control 160–240 nC Q_g
2 (Drain)	High-side current path	Internally connected to large copper die attach area; must be soldered to ≥6 cm² thermal pad
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate loop; critical for minimizing shoot-through risk

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs without level-shifting
Avalanche-rated operation	700 mJ single-pulse E_AS eliminates need for external snubbers in inductive loads
dv/dt ruggedness	6 kV/µs rating prevents spurious turn-on during fast voltage transients in bridge circuits
High-temperature capability	175 °C T_j(max) supports operation in automotive under-hood and industrial motor-control environments
Co-packaged body diode	1.2–1.8 V V_SD at 140 A enables efficient freewheeling in synchronous buck topologies

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge inverter stage for 24–48 V BLDC motors in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side switch in 20 kHz PWM-controlled phase-leg; handles 70 A peak current with minimal conduction loss.

Use Value: 16 mΩ R_DS(on) reduces I²R losses by >30% vs. comparable 20 mΩ MOSFETs, lowering heatsink requirements.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V intermediate bus converter for AI server racks.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck regulator; operates at 300–500 kHz with tight duty-cycle control.

Use Value: 4.5 V logic-level turn-on ensures full enhancement using standard PMBus-compliant controller outputs.

Automotive Body Control

Renewable Energy Inverters

Use Scenario: Load switch for high-current solenoids and lighting modules in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Single-ended high-side driver with integrated protection; activated via CAN-linked microcontroller GPIO.

Use Value: 175 °C rating permits placement near engine bay electronics without derating at ambient >105 °C.

Use Scenario: DC link switch in string-level solar optimizer for residential PV arrays.

IC Role / Device Role / Timing Role: Unidirectional blocking element handling 100 V DC input with transient overvoltage clamping.

Use Value: Avalanche rating absorbs lightning-induced surges up to 700 mJ without external TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP70NF10	R_DS(on) = 14 mΩ @ 10 V; no specified dv/dt rating; TO-220 package	Lacks dv/dt ruggedness and 175 °C rating; unsuitable for high-slew-rate motor drives	Prefer SPB70N10L where board space allows D²PAK and system demands transient immunity
IRF540N	V_GS(th) = 2–4 V; R_DS(on) = 44 mΩ @ 10 V; TO-220	Higher gate threshold and on-resistance increase drive complexity and conduction loss	SPB70N10L delivers 2.7× lower R_DS(on) and guaranteed logic-level operation-critical for compact, thermally constrained designs

Compared with STP70NF10 and IRF540N, SPB70N10L offers superior thermal performance (0.6 K/W vs. ~1.5 K/W), verified dv/dt immunity, and tighter V_GS(th) distribution-making it optimal for high-reliability, high-density power stages where gate drive simplicity and avalanche robustness are mandatory.

Availability

SPB70N10L is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for SPB70N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

SPB70N10L belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and automotive power conversion where gate drive simplicity and ruggedness are essential.

FAQ

What is the maximum safe operating voltage for SPB70N10L in continuous DC applications?

The SPB70N10L has a rated V_DS of 100 V with a minimum breakdown voltage of 100 V at T_j = 25 °C. Derating is required above 25 °C: V(BR)_DSS decreases to ~90 V at –60 °C and remains ≥98 V up to 140 °C. For reliable long-term operation, continuous DC voltage should not exceed 80 V to maintain 20% margin against transients and temperature drift.

Can SPB70N10L be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-its V_GS(th) range (1.2–2.0 V) and R_DS(on) of ≤25 mΩ at V_GS = 4.5 V allow full enhancement with 3.3 V logic. However, due to its 160–240 nC total gate charge, slew rate and switching speed will be limited without a dedicated driver. For >100 kHz operation or low-loss PWM, a gate driver with ≥2 A peak output is recommended.

Does SPB70N10L include integrated ESD protection on the gate terminal?

No-SPB70N10L does not integrate gate ESD protection diodes. Its gate oxide is rated for ±20 V V_GS, but transient ESD events exceeding ±2 kV HBM can cause latent damage. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp to source) is strongly advised in manual-handling or connector-exposed applications.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD = 1.2–1.8 V at 140 A and t_rr = 100–150 ns-higher forward drop and slower recovery than typical 45 V Schottky diodes (0.45–0.65 V, <30 ns). It is suitable for freewheeling in low-frequency (<50 kHz) or low-duty-cycle applications but not optimal for high-frequency synchronous rectification where Schottky or GaN-based solutions offer superior efficiency.

SPB70N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB70N10L FAQ

1.How can I place an order for SPB70N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB70N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB70N10L reliable?

The price and inventory of SPB70N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB70N10L is usually 5 days.

3.What payment methods are accepted for SPB70N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB70N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB70N10L?

SPB70N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB70N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB70N10L?

For technical support, including SPB70N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB70N10L requirements.

6.How does Aetrix verify that SPB70N10L is sourced from the original manufacturer or authorized distributors?

All SPB70N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB70N10L meets industry standards.

7.What is the process for return or replacement of SPB70N10L?

All SPB70N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPB70N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB70N10L part is unused and in its original packaging.

Return procedure for SPB70N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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