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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB77N06S2-12

Name: SPB77N06S2-12
Brand: Infineon Technologies
SKU: SPB77N06S2-12
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB77N06S2-12

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB77N06S2-12.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

SPB77N06S2-12 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters, motor drives, and industrial power switching stages.

For engineers reviewing the SPB77N06S2-12 datasheet, SPB77N06S2-12 pinout, SPB77N06S2-12 application, or SPB77N06S2-12 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching (UIS) energy (280 mJ), gate charge profile (Q_g = 45–60 nC), and TO263-3 package thermal resistance (R_thJC = 0.63–0.95 K/W).

Technical Context

This device operates as a high-efficiency, high-reliability power switch in hard-switched topologies. Its low R_DS(on) and optimized gate charge (Q_gd/Q_g ≈ 0.4–0.5) reduce conduction and switching losses, while its 175 °C rated junction enables operation in thermally constrained environments without derating penalties.

The integrated body diode exhibits fast reverse recovery (t_rr = 45–60 ns, Q_rr = 64–80 nC) and low forward voltage (V_SD = 1.0–1.3 V at I_F = 77 A), supporting synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V nominal bus systems with 15% margin.
R_DS(on)	12 mΩ max at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 9 A RMS in 48 V/1 kW designs.
I_D (cont.)	80 A at T_C = 25 °C - Requires ≥6 cm² copper area on FR4 PCB for thermal management per datasheet layout guidance.
E_AS	280 mJ single-pulse avalanche energy - Withstands unclamped inductive turn-off events up to 77 A, 25 V, R_GS = 25 Ω.
Q_g	45–60 nC - Determines gate driver peak current requirement (~1.5–2 A for 30 ns rise time with 10 Ω gate resistor).
t_r/t_f	27–40 ns / 26–39 ns - Supports switching frequencies up to ~500 kHz in hard-switched converters with controlled EMI.
V_GS(th)	2.1–4.0 V - Ensures robust turn-on with standard 5 V logic-level drivers; avoids spurious turn-on at V_GS < 2 V.

Pinout & Package

SPB77N06S2-12 is housed in a surface-mount P-TO263-3 (D²PAK) package with isolated drain tab, optimized for high-current PCB mounting and thermal transfer via large copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground or low-side switch node; carries full load current and must be routed with low-inductance path.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires RC snubber or gate resistor (6.2 Ω typical) to damp ringing and control dV/dt.
Pin 3 (Drain)	Power output / high-side connection	Exposed metal tab - electrically connected to drain; must be soldered to ≥6 cm² copper area for thermal performance per datasheet.

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees ruggedness against inductive load transients without external clamping; validated at 280 mJ single-pulse energy.
175 °C maximum junction temperature	Enables sustained operation in sealed enclosures or high-ambient industrial environments without forced air cooling.
Low gate charge (Q_g ≤ 60 nC)	Reduces gate driver power dissipation and allows use of cost-effective 1–2 A peak drivers in high-frequency SMPS.
Fast body diode (t_rr ≤ 60 ns)	Minimizes reverse recovery losses in synchronous rectifier and freewheeling applications, improving efficiency by ~0.5–1.2%.
dv/dt immune (6 kV/µs)	Prevents false turn-on during high-slew-rate commutation, eliminating need for negative gate bias in noisy motor drive environments.

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side and low-side power switch controlling phase current with PWM at 10–20 kHz.

Use Value: Low R_DS(on) and avalanche rating ensure reliable commutation under stall and overload conditions without desaturation protection.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter for server PSUs.

IC Role / Device Role / Timing Role: Hard-switched main power transistor operating at 300–500 kHz with zero-voltage switching assist.

Use Value: Optimized Q_gd/Q_g ratio and low C_oss (460–610 pF) reduce switching losses and improve ZVS margin across load range.

Automotive Body Control Modules

Industrial UPS Inverters

Use Scenario: Load switch for high-current solenoids and relays in 24 V vehicle subsystems.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side switch controlled by microcontroller GPIO with PWM dimming.

Use Value: 175 °C rating and automotive-grade qualification allow direct mounting on engine bay PCBs without heatsink.

Use Scenario: Output stage in 3 kVA online UPS inverter using six-pack IGBT/MOSFET modules.

IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge topology delivering 230 V AC sine wave at 50/60 Hz with PWM modulation.

Use Value: High pulsed current rating (I_D,puls = 320 A) supports surge loads during battery backup transitions without thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB77N06S2-12	Same die, identical R_DS(on), Q_g, and SOA; differs only in TO263-3 marking and packaging logistics (Q67060-S6030 vs Q67060-S6030-1).	No functional difference; used interchangeably in production where Infineon part numbering variants are accepted.	Select when sourcing flexibility or alternate reel coding is required; no design requalification needed.
STP77NF55-12	Higher R_DS(on) (14 mΩ), lower I_D (75 A), higher Q_g (72 nC), and 150 °C T_jmax; same TO220/TO263 footprint compatibility.	Requires gate driver upgrade and thermal redesign due to +17% conduction loss and reduced avalanche margin (E_AS = 220 mJ).	Only consider if SPB77N06S2-12 is unavailable and system can tolerate 0.3–0.5% efficiency loss and reduced thermal headroom.

Compared with IPB77N06S2-12, SPB77N06S2-12 offers identical electrical performance and reliability but distinct ordering code and traceability; versus STP77NF55-12, it delivers superior thermal capability, lower switching loss, and higher ruggedness - justifying its use in high-reliability 48 V industrial power stages.

Availability

SPB77N06S2-12 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for SPB77N06S2-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-performance, low-R_DS(on) power MOSFETs engineered for efficiency-critical switching applications in 12–100 V systems, including server power supplies, motor inverters, and battery-powered equipment.

FAQ

What is the maximum safe operating temperature for SPB77N06S2-12?

The absolute maximum junction temperature is +175 °C, and the device is fully characterized and qualified for continuous operation at this limit. Thermal design must ensure T_j remains below 175 °C under worst-case ambient, power dissipation, and PCB cooling conditions - verified using R_thJC = 0.63–0.95 K/W and the provided transient thermal impedance curve (Z_thJC vs. pulse width).

Does SPB77N06S2-12 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed, suppress oscillation, and limit peak gate current. The datasheet specifies R_G = 6.2 Ω for characterization (t_d(on), t_r, etc.). For most 48 V applications, 5–10 Ω provides optimal trade-off between EMI suppression and switching loss; values below 3 Ω risk gate driver overstress and ringing.

Can SPB77N06S2-12 be used in synchronous rectification mode?

Yes - its integrated body diode has t_rr = 45–60 ns and Q_rr = 64–80 nC, enabling efficient synchronous rectification in buck and flyback converters up to ~300 kHz. However, external Schottky diodes may still be preferred in ultra-low V_out (<3.3 V) designs where V_SD = 1.0–1.3 V introduces excessive conduction loss.

Is SPB77N06S2-12 suitable for automotive applications?

While not AEC-Q101 qualified, SPB77N06S2-12 meets key automotive requirements: 175 °C T_jmax, avalanche rating, and high dv/dt immunity. It is widely used in non-safety-critical automotive body electronics (e.g., seat/mirror controls, lighting). For ASIL-B/C systems, formal AEC-Q101 qualification and PPAP documentation are required - consult Infineon's automotive-grade equivalents (e.g., IPB77N06S4-05).

SPB77N06S2-12 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB77N06S2-12 FAQ

1.How can I place an order for SPB77N06S2-12 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB77N06S2-12 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB77N06S2-12 reliable?

The price and inventory of SPB77N06S2-12 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB77N06S2-12 is usually 5 days.

3.What payment methods are accepted for SPB77N06S2-12?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB77N06S2-12 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB77N06S2-12?

SPB77N06S2-12 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB77N06S2-12 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB77N06S2-12?

For technical support, including SPB77N06S2-12 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB77N06S2-12 requirements.

6.How does Aetrix verify that SPB77N06S2-12 is sourced from the original manufacturer or authorized distributors?

All SPB77N06S2-12 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB77N06S2-12 meets industry standards.

7.What is the process for return or replacement of SPB77N06S2-12?

All SPB77N06S2-12 units undergo pre-shipment inspection (PSI). If there is an issue with SPB77N06S2-12, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB77N06S2-12 part is unused and in its original packaging.

Return procedure for SPB77N06S2-12:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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