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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N03S203GATMA1

Name: SPB80N03S203GATMA1
Brand: Infineon Technologies
SKU: SPB80N03S203GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N03S203GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N03S203GATMA1.pdf

Description:: MOSFET N-CH 30V 80A TO263-3

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Product details

Overview

SPB80N03S203GATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO-263-3 (D²PAK) package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 2.3 mΩ typical R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, avalanche rating (E_AS = 810 mJ), and dv/dt ruggedness (6 kV/µs), designed for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N03S203GATMA1 datasheet, SPB80N03S203GATMA1 pinout, SPB80N03S203GATMA1 application, or SPB80N03S203GATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (Q_g = 110–150 nC, R_DS(on) ≤ 3.1 mΩ), thermal resistance (R_thJC = 0.3–0.5 K/W), and integrated body diode with t_rr = 65–80 ns and Q_rr = 87–110 nC.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, high-frequency synchronous rectification and PWM motor control. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures robust turn-on with standard 5 V or 10 V logic-level drivers, while the 66–132 S transconductance supports fast current slew rates under heavy load.

The device integrates a monolithic body diode with controlled reverse recovery characteristics-Q_rr ≤ 110 nC and t_rr ≤ 80 ns-enabling reliable operation in hard-switched topologies without external snubbers. Thermal design is supported by validated transient impedance curves and a 0.5 K/W max junction-to-case resistance under PCB mounting per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin against transients.
R_DS(on) max	3.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1.9 W conduction loss at full current, critical for thermally constrained PCB layouts.
I_D cont	80 A at T_C = 25 °C - Supports high-current phases in BLDC motor drives and server VRMs without paralleling.
E_AS	810 mJ single-pulse avalanche energy - Withstands inductive turn-off surges in relay drivers and solenoid controls without failure.
dv/dt rating	6 kV/µs - Ensures immunity to false turn-on during fast voltage transients in noisy industrial environments.
Q_g	110–150 nC - Balances switching speed and gate driver power loss for 100–500 kHz operation in LLC resonant converters.
t_r/t_f	325–490 ns / 110–160 ns - Enables clean edge transitions with minimal EMI generation in Class-D audio amplifiers.

Pinout & Package

SPB80N03S203GATMA1 is housed in a surface-mount TO-263-3 (D²PAK) package with exposed drain pad for thermal conduction. The package complies with JEDEC MO-211 and supports solder reflow per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current in low-side configuration.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <150 nC charge for full enhancement; sensitive to ESD (±20 V absolute max).
Pin 3 (Drain)	Power output (D)	Exposed copper pad on backside; primary heat path to PCB; electrically connected to drain; must be routed with minimum trace inductance.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	≤ 465 nC·mΩ - Reduces total switching + conduction loss in high-frequency SMPS, improving efficiency >95% at 200 kHz.
175 °C operating temperature	Junction-rated for extended life in sealed enclosures or high-ambient automotive under-hood zones.
Avalanche-rated (E_AS)	810 mJ tested - Eliminates need for external clamping in inductive load switching, reducing BOM count.
Low R_thJC	0.3 K/W typ - Enables 300 W power dissipation with <15 °C rise above heatsink, supporting compact thermal design.
Fast body diode (t_rr)	65–80 ns - Minimizes reverse recovery loss in synchronous buck converters, especially at light loads.

Applications

Motor Drive Half-Bridge

Server VRM High-Side Switch

Use Scenario: Driving 24 V brushed DC or 3-phase BLDC motors in industrial automation actuators with PWM frequencies up to 25 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles bidirectional current during PWM commutation and regenerative braking.

Use Value: 2.3 mΩ R_DS(on) limits I²R loss to <15 W at 80 A peak, enabling air-cooled designs without forced convection.

Use Scenario: High-current phase-leg switch in 48 V–12 V intermediate bus converters for AI accelerator cards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switched at 300–500 kHz with precise dead-time control.

Use Value: 110–150 nC Q_g allows gate drive with <2 W loss using discrete 2 A drivers, maintaining >94% efficiency at 100 A output.

Automotive HVAC Blower Control

Industrial Solenoid Driver

Use Scenario: PWM-controlled blower fan in vehicle cabin HVAC systems, operating continuously at ambient up to 105 °C.

IC Role / Device Role / Timing Role: Low-side power switch interfacing microcontroller GPIO; subjected to load dump and jump-start transients.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during alternator load dump (ISO 7637-2 Pulse 5a), eliminating latch-up risk.

Use Scenario: Driving 24 V DC solenoids in factory pneumatic valves with 100 ms on-time and 10 Hz cycling.

IC Role / Device Role / Timing Role: Single-ended switch with integrated freewheeling path; absorbs inductive kickback during turn-off.

Use Value: 810 mJ E_AS withstands repetitive 25 V × 80 A inductive spikes without derating, removing need for TVS or flyback diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8720PbF	R_DS(on) = 4.0 mΩ (max), Q_g = 22 nC, TO-220 package, no avalanche rating	Limited to lower-current (<60 A) and non-avalanche-critical circuits; higher thermal resistance (R_thJC = 1.2 K/W)	Choose when cost sensitivity outweighs thermal performance and surge robustness.
STL220N3LLH6	R_DS(on) = 2.2 mΩ (typ), Q_g = 125 nC, PowerFLAT 5x6 package, 175 °C rated, no published E_AS	Suitable for space-constrained SMT-only designs but lacks validated avalanche capability for inductive loads	Prefer for ultra-compact DC-DC modules where board area is critical and inductive stress is managed externally.

Compared with IRF8720PbF and STL220N3LLH6, SPB80N03S203GATMA1 uniquely combines sub-3 mΩ R_DS(on), 810 mJ avalanche rating, and 0.5 K/W thermal resistance in a D²PAK package-making it optimal for high-reliability, high-power industrial switching where both efficiency and ruggedness are mandatory.

Availability

SPB80N03S203GATMA1 is available at Aetrix Electronics and suitable for motor drive half-bridges, server VRM phase-legs, and automotive HVAC blower control requiring stable component supply across multi-year production cycles.

Supply support for SPB80N03S203GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to the OptiMOS™ 3rd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive body electronics, industrial motor drives, and computing power supplies.

FAQ

What is the maximum safe operating temperature for SPB80N03S203GATMA1?

The device is rated for continuous operation up to T_j = 175 °C, verified per JEDEC JESD22-A108. Derating begins at T_C > 25 °C per the ID vs. TC curve on page 4 of the datasheet; at T_C = 100 °C, continuous current drops to ~45 A. Thermal design must maintain case temperature below 125 °C for 10-year reliability in industrial use.

Does SPB80N03S203GATMA1 require a gate resistor for stability?

Yes-a series gate resistor (R_G = 2.2 Ω typical) is recommended to dampen ringing and limit peak gate current during switching, as confirmed in the dynamic test conditions (td(on), tr, etc.) on page 3. Without it, parasitic inductance may cause oscillation or overshoot exceeding ±20 V V_GS rating, risking gate oxide damage.

Can SPB80N03S203GATMA1 replace older OptiMOS 2nd-gen parts like SPB80N03S2L-03?

No-SPB80N03S203GATMA1 is not a drop-in replacement for SPB80N03S2L-03 due to differences in gate threshold (2.1–4.0 V vs. 1.8–3.2 V) and R_DS(on) distribution (3.1 mΩ max vs. 3.5 mΩ max). Layout and drive strength must be revalidated; gate drive timing margins change by ±15 ns per the td(on)/td(off) specs.

Is the body diode suitable for synchronous rectification in buck converters?

Yes-the integrated body diode has t_rr = 65–80 ns and Q_rr = 87–110 nC, enabling efficient synchronous rectification up to 300 kHz. However, for best light-load efficiency, external Schottky diodes remain preferred; this MOSFET's diode is optimized for robustness-not ultra-low V_SD-with V_SD = 0.9–1.3 V at 80 A.

SPB80N03S203GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N03S203GATMA1 FAQ

1.How can I place an order for SPB80N03S203GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N03S203GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N03S203GATMA1 reliable?

The price and inventory of SPB80N03S203GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N03S203GATMA1 is usually 5 days.

3.What payment methods are accepted for SPB80N03S203GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N03S203GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N03S203GATMA1?

SPB80N03S203GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N03S203GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N03S203GATMA1?

For technical support, including SPB80N03S203GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N03S203GATMA1 requirements.

6.How does Aetrix verify that SPB80N03S203GATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB80N03S203GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N03S203GATMA1 meets industry standards.

7.What is the process for return or replacement of SPB80N03S203GATMA1?

All SPB80N03S203GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N03S203GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N03S203GATMA1 part is unused and in its original packaging.

Return procedure for SPB80N03S203GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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