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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N03S2L-06

Name: SPB80N03S2L-06
Brand: Infineon Technologies
SKU: SPB80N03S2L-06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N03S2L-06

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N03S2L-06.pdf

Description:: MOSFET N-CH 30V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,637

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Product details

Overview

SPB80N03S2L-06 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO263-3 (D²PAK) package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.9 mΩ max R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C operation, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC and motor drive switching.

For engineers reviewing the SPB80N03S2L-06 datasheet, SPB80N03S2L-06 pinout, SPB80N03S2L-06 application, or SPB80N03S2L-06 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, robust dv/dt immunity (6 kV/µs), integrated body diode with 41 ns reverse recovery time, and thermal resistance of 0.68 K/W (junction-to-case).

Technical Context

This OptiMOS™ device uses trench-gate silicon technology to achieve low on-resistance while maintaining fast switching and rugged unclamped inductive switching (UIS) capability. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The MOSFET supports high-current synchronous rectification and half-bridge configurations, with specified gate charge (Q_g = 51–68 nC), output capacitance (C_oss = 740–990 pF), and transconductance (g_fs = 44–88 S), enabling precise modeling in power stage simulations and thermal design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin against transients
R_DS(on) max @ V_GS = 10 V	5.9 mΩ - Enables <1.5 W conduction loss at 80 A, critical for high-current power stages
I_D continuous @ T_C = 25 °C	80 A - Supports high-power motor drives and industrial SMPS without forced air cooling
E_AS single-pulse	240 mJ - Withstands repetitive inductive energy spikes in H-bridge and flyback applications
dv/dt rating	6 kV/µs - Ensures noise-immune operation in high-speed switching environments with fast edge rates
T_j operating range	−55 to +175 °C - Validated for under-hood automotive and industrial ambient conditions
Q_g total	51–68 nC - Balances switching speed and gate driver power requirements for 100–500 kHz operation

Pinout & Package

SPB80N03S2L-06 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal performance. The package footprint requires minimum copper area (6 cm²) on FR4 PCB for rated R_thJA = 40 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Logic-level compatible; threshold 1.2–2.0 V; requires <100 nA leakage current handling
2 (Drain)	High-side or low-side switch node	Internally connected to large copper tab; must be soldered to PCB copper pour for thermal path
3 (Source)	Reference return path	Provides Kelvin sense point for accurate current monitoring; ties to power ground plane

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in MCU-based designs
Avalanche-rated	240 mJ single-pulse E_AS - enables reliable operation in inductive load switching without external snubbers
Low Q_g × R_DS(on)	300–400 nC·mΩ - optimizes trade-off between conduction loss and switching loss in high-frequency converters
175 °C junction rating	Extended thermal headroom - allows derating for long-life operation in sealed enclosures or high ambient
dv/dt immune	6 kV/µs - prevents false turn-on during fast voltage transients in half-bridge and phase-leg topologies

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlights, fans, and solenoids in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Power switch controlling up to 80 A peak loads with PWM dimming and short-circuit protection.

Use Value: Low R_DS(on) minimizes heat generation in confined BCM housings; 175 °C rating ensures reliability across temperature extremes.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf ≤ 91 ns) to support 20–100 kHz PWM commutation.

Use Value: Integrated body diode with 41 ns t_rr reduces shoot-through risk and improves efficiency over discrete freewheeling diodes.

Server VRM Synchronous Rectifier

Telecom DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 48 V to 12 V intermediate bus converters for AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-loss rectifier replacing Schottky diodes; driven by gate controller with 5.9 mΩ on-resistance.

Use Value: Conduction loss reduced by >60% vs. 40 V Schottky, improving full-load efficiency from 92% to 94.5% at 100 A.

Use Scenario: Primary-side high-side switch in isolated 48 V input telecom PSUs delivering 12 V/60 A output.

IC Role / Device Role / Timing Role: Fast-switching power FET with 68 nC Q_g enabling ZVS-compatible operation at 300 kHz.

Use Value: Optimized C_iss/C_oss ratio (1900/740 pF) supports soft-switching transitions and reduces EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL80N3LLH6	R_DS(on) = 5.5 mΩ @ 10 V, but only rated for 150 °C T_j; higher Q_gd (22 nC vs. 18–27 nC)	Lacks avalanche rating and 175 °C operation - unsuitable for automotive under-hood or high-reliability industrial use	Prefer SPB80N03S2L-06 where UIS robustness or extended temperature margin is required
IRF8720PBF	R_DS(on) = 6.8 mΩ @ 10 V; lower E_AS (120 mJ); TO-220 package (higher R_thJC = 1.0 K/W)	Thermal performance limited by through-hole package; not suitable for high-density SMD layouts or >60 A continuous operation	Choose SPB80N03S2L-06 for surface-mount scalability, better thermal resistance, and higher energy handling

Compared with STL80N3LLH6 and IRF8720PBF, SPB80N03S2L-06 delivers superior thermal management (0.68 K/W), certified avalanche capability, and broader temperature compliance - making it the preferred choice for mission-critical 24–48 V power stages requiring long-term reliability and compact layout.

Availability

SPB80N03S2L-06 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, and telecom DC-DC converters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for SPB80N03S2L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPB80N03S2L-06 belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion where low R_DS(on), logic-level drive, and ruggedness are essential.

FAQ

Is SPB80N03S2L-06 suitable for synchronous rectification in 48 V to 12 V converters?

Yes. With 5.9 mΩ R_DS(on) at 10 V gate drive and 80 A continuous rating, it replaces 40 V Schottky diodes in secondary-side synchronous rectifiers. Its 41 ns reverse recovery time and low Q_rr (46–58 nC) minimize switching losses and improve efficiency above 94% at full load.

What is the maximum safe operating frequency when using SPB80N03S2L-06 in a hard-switched buck converter?

At 80 A and 30 V, switching losses become dominant above 300 kHz due to Q_g = 68 nC and C_oss = 990 pF. For thermally constrained designs, 200 kHz is recommended for continuous operation; above that, gate drive strength and PCB thermal design must be rigorously validated.

Does SPB80N03S2L-06 require a gate resistor for stability in half-bridge configurations?

Yes. A 3.6 Ω gate resistor is specified in the datasheet for turn-on/turn-off timing characterization. In practice, values between 2.2 Ω and 10 Ω are used to balance switching speed, ringing suppression, and gate driver stress - especially critical given its 6 kV/µs dv/dt rating.

Can SPB80N03S2L-06 be operated with 3.3 V microcontroller GPIO directly?

No. While its V_GS(th) starts at 1.2 V, full enhancement (R_DS(on) ≤ 9.2 mΩ) requires V_GS ≥ 4.5 V. Driving from 3.3 V GPIO results in excessive conduction loss (>3× rated) and thermal runaway risk; a level-shifting gate driver is mandatory.

SPB80N03S2L-06 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N03S2L-06 FAQ

1.How can I place an order for SPB80N03S2L-06 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N03S2L-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N03S2L-06 reliable?

The price and inventory of SPB80N03S2L-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N03S2L-06 is usually 5 days.

3.What payment methods are accepted for SPB80N03S2L-06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N03S2L-06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N03S2L-06?

SPB80N03S2L-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N03S2L-06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N03S2L-06?

For technical support, including SPB80N03S2L-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N03S2L-06 requirements.

6.How does Aetrix verify that SPB80N03S2L-06 is sourced from the original manufacturer or authorized distributors?

All SPB80N03S2L-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N03S2L-06 meets industry standards.

7.What is the process for return or replacement of SPB80N03S2L-06?

All SPB80N03S2L-06 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N03S2L-06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N03S2L-06 part is unused and in its original packaging.

Return procedure for SPB80N03S2L-06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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