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Infineon Technologies SPB80N03S2L-06 G
- Part No.:
- SPB80N03S2L-06 G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N03S2L-06 G.pdf
- Description:
- MOSFET N-CH 30V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,690
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Product details
Overview
SPB80N03S2L-06 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO263-3-2 (D²PAK) package, rated for 30 V VDS, 80 A continuous drain current at TC = 25 °C, and 5.9 mΩ max RDS(on) at VGS = 10 V. It features avalanche rating, 175 °C operation, and optimized gate charge × RDS(on) figure-of-merit for high-efficiency DC-DC converters and motor drives.
For engineers reviewing the SPB80N03S2L-06 datasheet, SPB80N03S2L-06 pinout, SPB80N03S2L-06 application, or SPB80N03S2L-06 equivalent, key selection criteria include its low 4.6 mΩ typical RDS(on) at 4.5 V drive, 6.6 mΩ max at 4.5 V/80 A (SMD version), 1900 pF Ciss, 175 °C Tjmax, and dv/dt ruggedness up to 6 kV/µs.
Technical Context
This OptiMOS™ device uses trench-gate silicon technology optimized for low conduction and switching losses in synchronous rectification and high-current switching applications. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers, while the 51 nC total gate charge (typ.) supports efficient PWM control at frequencies up to several hundred kHz.
The MOSFET integrates a robust body diode with 41 ns reverse recovery time (typ.), 46 nC Qrr, and 0.9 V forward voltage at 80 A - enabling use in freewheeling paths without external Schottky diodes in many 12 V/24 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V - Supports 12 V and 24 V nominal bus systems with margin for transient spikes. |
| RDS(on) max @ 10 V | 5.9 mΩ - Enables ≤4.7 W conduction loss at 80 A, critical for thermal management in compact SMD layouts. |
| ID Continuous | 80 A @ TC = 25 °C - Requires ≥6 cm² copper area on FR4 PCB for specified thermal performance. |
| Qg total | 51–68 nC - Determines gate driver current requirement; ~1.7 A peak needed for 20 ns rise time with 3.6 Ω RG. |
| EAS Single Pulse | 240 mJ - Allows safe clamping of inductive switch-off energy without external snubbers in motor H-bridge designs. |
| Tj Operating Range | −55 °C to +175 °C - Qualified for under-hood automotive and industrial environments with no derating up to 175 °C. |
| Ciss | 1900–2530 pF - Impacts high-frequency gate drive stability and EMI filtering requirements. |
Pinout & Package
SPB80N03S2L-06 is housed in a surface-mount TO263-3-2 (D²PAK) package with exposed drain pad for thermal conduction. The package footprint requires soldering the drain tab to ≥6 cm² of 70 µm copper on FR4 for rated RthJA = 40 K/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires <100 nA leakage current handling and controlled slew rate to avoid oscillation. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad - electrically and thermally connected to drain; must be soldered to PCB copper pour for thermal and current path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on with 4.5 V supply - eliminates need for gate boosters in 5 V or 3.3 V controller systems. |
| Avalanche-rated | 240 mJ single-pulse EAS - enables robust operation in inductive switching without external protection components. |
| dv/dt ruggedness | 6 kV/µs - prevents false turn-on during fast voltage transients in half-bridge and phase-leg configurations. |
| Optimized FOM (Qg × RDS(on)) | ~300 nC·mΩ (typ.) - balances switching loss and conduction loss for high-efficiency 100–500 kHz SMPS designs. |
| Body diode performance | 41 ns trr, 0.9 V VSD @ 80 A - reduces reverse recovery loss and EMI in synchronous rectifier and bidirectional converter topologies. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V buck converter in ADAS ECUs with strict thermal envelope and EMI limits. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300 kHz PWM with 4.5 V gate drive from integrated controller. Use Value: 5.9 mΩ RDS(on) minimizes conduction loss; 6.6 mΩ max at 4.5 V ensures stable regulation across temperature and production spread. | Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers and power tools. IC Role / Device Role / Timing Role: Low-side switching element with fast 23 ns rise time and 61 ns fall time, driven by isolated gate driver. Use Value: 175 °C Tjmax and 240 mJ EAS support continuous operation under stall conditions and short-circuit events. |
| Server VRMs | Energy Storage Systems |
Use Scenario: Multiphase buck stage in 48 V input server voltage regulator module delivering >100 A to CPU/GPU. IC Role / Device Role / Timing Role: Power stage MOSFET with paralleled configuration, leveraging low RDS(on) and matched dynamic parameters. Use Value: 1900 pF Ciss and 175 pF Crss enable tight gate timing control; 0.68 K/W RthJC supports direct heatsink mounting. | Use Scenario: Bidirectional DC-DC isolation stage in 48 V battery energy storage system with regenerative braking. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated dual-active-bridge topology, conducting in both directions. Use Value: Body diode trr = 41 ns and Qrr = 46 nC reduce switching loss and voltage overshoot during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8721PbF | RDS(on) = 6.0 mΩ @ 4.5 V; Ciss = 2050 pF; TO-220AB package; no avalanche rating. | Lacks EAS spec and dv/dt rating - unsuitable for inductive switching without external protection. | Prefer for cost-sensitive, non-avalanche-critical 12 V loads where thermal budget allows TO-220 mounting. |
| STL220N3LLH6 | RDS(on) = 4.2 mΩ @ 4.5 V; Qg = 72 nC; PowerFLAT 5x6 package; 175 °C rated. | Lower RDS(on) but higher Qg; smaller footprint limits copper area and thermal mass. | Choose when board space is constrained and gate drive capability supports higher Qg; verify layout thermal resistance matches 40 K/W target. |
Compared with IRL8721PbF and STL220N3LLH6, SPB80N03S2L-06 uniquely combines avalanche ruggedness, 6 kV/µs dv/dt immunity, and D²PAK thermal performance - making it optimal for high-reliability 24 V motor and converter designs where fault tolerance and thermal headroom are prioritized over minimal RDS(on).
Availability
SPB80N03S2L-06 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SPB80N03S2L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™ 30 V logic-level power MOSFET product line, engineered for high-current, high-efficiency switching in automotive and industrial power conversion systems where reliability under transient stress is mandatory.
FAQ
What is the maximum gate-source voltage for SPB80N03S2L-06?
The absolute maximum VGS is ±20 V per the datasheet's "Maximum Ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to −10 V to +15 V, with transient spikes clamped using Zener diodes or gate driver ICs with built-in protection.
Can SPB80N03S2L-06 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (see Page 9 RDS(on) vs. Tj curve) ensures inherent current sharing. To achieve balanced dynamic sharing, match gate loop inductance, use individual gate resistors (≤5 Ω), and ensure symmetrical PCB layout with identical trace lengths and copper area for each device's drain and source connections.
Is the body diode suitable for continuous freewheeling in a buck converter?
Yes - the body diode is rated for 80 A continuous forward current at TC = 25 °C and exhibits 0.9 V typical VSD at 80 A. However, due to its 41 ns trr, it must be operated in discontinuous conduction mode (DCM) or with active synchronous rectification to avoid reverse recovery losses in high-frequency (>200 kHz) continuous conduction mode (CCM) designs.
What is the recommended PCB layout for thermal performance?
Mount the device on a vertical FR4 PCB with ≥6 cm² of 70 µm thick copper connected to the exposed drain pad. Use ≥4 thermal vias (0.3 mm diameter, filled or plated) under the pad, connecting to inner or backside ground/power planes. Avoid routing signal traces under the device; maintain ≥1.5 mm clearance between drain pad and adjacent traces to prevent arcing at 30 V transients.
SPB80N03S2L-06 G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N03S2L-06 G FAQ
1.How can I place an order for SPB80N03S2L-06 G through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N03S2L-06 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N03S2L-06 G reliable?
The price and inventory of SPB80N03S2L-06 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N03S2L-06 G is usually 5 days.
3.What payment methods are accepted for SPB80N03S2L-06 G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N03S2L-06 G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N03S2L-06 G?
SPB80N03S2L-06 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N03S2L-06 G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N03S2L-06 G?
For technical support, including SPB80N03S2L-06 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N03S2L-06 G requirements.
6.How does Aetrix verify that SPB80N03S2L-06 G is sourced from the original manufacturer or authorized distributors?
All SPB80N03S2L-06 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N03S2L-06 G meets industry standards.
7.What is the process for return or replacement of SPB80N03S2L-06 G?
All SPB80N03S2L-06 G units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N03S2L-06 G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N03S2L-06 G part is unused and in its original packaging.
Return procedure for SPB80N03S2L-06 G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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