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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N04S2-04

Name: SPB80N04S2-04
Brand: Infineon Technologies
SKU: SPB80N04S2-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N04S2-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N04S2-04.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

SPB80N04S2-04 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 40 V V_DS, 3.4 mΩ R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N04S2-04 datasheet, SPB80N04S2-04 pinout, SPB80N04S2-04 application, or SPB80N04S2-04 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 0.5 K/W), avalanche energy (E_AS = 810 mJ), and diode forward voltage (V_SD = 0.9–1.3 V).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous rectification and high-frequency PWM applications. Its gate charge profile (Q_g = 135–170 nC, Q_gd = 50–75 nC) supports efficient gate driver sizing, while C_iss = 5250–6980 pF and C_oss = 1870–2490 pF define its capacitive behavior under 25 V bias.

The integrated body diode exhibits t_rr = 60–75 ns and Q_rr = 100–125 nC at 20 V reverse recovery, enabling hard-switched operation with controlled reverse recovery loss. Thermal design relies on direct die-to-case conduction via the exposed drain pad, validated by transient impedance curves up to 100 ms pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in off-state; defines use in ≤36 V nominal bus systems.
R_DS(on)	3.4 mΩ max @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages.
I_D cont.	80 A @ T_C = 25 °C - Sustained current capability with heatsink; derates to ~50 A at T_C = 100 °C per curve.
E_AS	810 mJ single-pulse - Withstands inductive energy dump without failure; supports unclamped inductive switching.
dv/dt	6 kV/µs - Resists false turn-on during high-slew-rate transients in bridge configurations.
R_thJC	0.5 K/W max - Enables precise junction temperature estimation from case temperature measurement.
V_GS(th)	2.1–4.0 V - Threshold range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers.
Q_g	135–170 nC - Determines gate driver peak current requirement (e.g., >3 A for 50 ns rise time).

Pinout & Package

SPB80N04S2-04 uses the P-TO263-3-2 (D²PAK) surface-mount package with an exposed drain pad on the bottom for thermal and electrical connection. The three terminals are arranged in a single-row configuration compatible with standard PCB footprint guidelines for D²PAK devices.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires low-inductance routing to minimize ringing and overshoot.
2 (Drain)	High-side switch node / heat sink interface	Exposed copper pad on underside; must be soldered to ≥6 cm² copper area for thermal performance.
3 (Source)	Reference node for gate drive and current sensing	Connected to power ground; used as return path for gate driver and shunt-based current monitoring.

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees ruggedness against inductive load switching without external snubbers in DC-DC and motor control.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) without derating.
Low R_DS(on) × Q_g figure-of-merit	~460 mΩ·nC - Balances conduction and switching losses for high-frequency (≤500 kHz) SMPS designs.
Optimized body diode recovery	t_rr = 60–75 ns, Q_rr = 100–125 nC - Reduces reverse recovery loss and EMI in synchronous rectifiers.
dv/dt immune structure	Rated to 6 kV/µs - Prevents parasitic turn-on in high-side configurations with fast-rising V_DS.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200 kHz with forced-air cooling.

Use Value: 3.4 mΩ R_DS(on) limits conduction loss to <2.2 W at 80 A, enabling >96% peak efficiency without liquid cooling.

Use Scenario: 3-phase inverter stage for 1–3 kW BLDC motors in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology with 10 kHz PWM.

Use Value: Avalanche rating allows safe operation during short-circuit events; 810 mJ E_AS eliminates need for external clamping diodes.

Server VRMs

Renewable Energy Inverters

Use Scenario: Multiphase CPU core voltage regulator delivering up to 300 A at ≤1.2 V.

IC Role / Device Role / Timing Role: Synchronous buck FET with 10 V gate drive and paralleled layout.

Use Value: Low Q_gd/Q_g ratio (≈0.44) improves duty-cycle linearity and reduces shoot-through risk.

Use Scenario: DC link switching in string inverters for residential solar PV systems.

IC Role / Device Role / Timing Role: DC bus switch handling 400–600 V DC input with fast turn-off.

Use Value: 6 kV/µs dv/dt immunity prevents false triggering during high-voltage transients from PV array arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB7545PBF	R_DS(on) = 3.2 mΩ @ 10 V, but higher Q_g = 190 nC; TO-220 package only.	Lacks TO263 variant; unsuitable for space-constrained SMD layouts requiring D²PAK footprint.	Select when board layout permits through-hole mounting and gate drive can support higher Q_g.
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V, but lower V_DS = 40 V same; 175 °C rating; D²PAK-3 package.	Higher conduction efficiency but tighter V_GS(th) tolerance (2.5–3.5 V); may require gate drive margin adjustment.	Prefer for ultra-low-loss designs where gate drive headroom allows tighter threshold control.

Compared with IRFB7545PBF and STL220N4F7AG, SPB80N04S2-04 offers optimal balance of low R_DS(on), industry-standard D²PAK thermal interface, and robust dv/dt immunity - making it preferred for high-reliability SMD motor drives and DC-DC converters where layout density and switching noise immunity are critical.

Availability

SPB80N04S2-04 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for SPB80N04S2-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion systems.

FAQ

What is the maximum allowable gate-source voltage for SPB80N04S2-04?

The absolute maximum gate-source voltage is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) optimization, with 12–15 V acceptable if current-limited to avoid overshoot.

Can SPB80N04S2-04 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed by R_DS(on) vs. T_j curve on Page 9) enables inherent current sharing. Successful parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and shared thermal mass to maintain uniform junction temperatures.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has t_rr = 60–75 ns and Q_rr = 100–125 nC at 20 V, enabling efficient synchronous rectification in buck converters up to 300 kHz. However, external Schottky diodes remain preferable for ultra-low V_F requirements below 0.5 V.

What is the recommended PCB footprint for thermal performance?

Per Page 2 footnote 3, the device requires a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² copper area (single layer, 70 µm thick) connected to the exposed drain pad. This achieves R_thJA ≈ 40 K/W; smaller areas increase thermal resistance proportionally.

SPB80N04S2-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N04S2-04 FAQ

1.How can I place an order for SPB80N04S2-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N04S2-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N04S2-04 reliable?

The price and inventory of SPB80N04S2-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N04S2-04 is usually 5 days.

3.What payment methods are accepted for SPB80N04S2-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N04S2-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N04S2-04?

SPB80N04S2-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N04S2-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N04S2-04?

For technical support, including SPB80N04S2-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N04S2-04 requirements.

6.How does Aetrix verify that SPB80N04S2-04 is sourced from the original manufacturer or authorized distributors?

All SPB80N04S2-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N04S2-04 meets industry standards.

7.What is the process for return or replacement of SPB80N04S2-04?

All SPB80N04S2-04 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N04S2-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N04S2-04 part is unused and in its original packaging.

Return procedure for SPB80N04S2-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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