My Inquiry
My Account
Infineon Technologies SPB80N04S2-H4
- Part No.:
- SPB80N04S2-H4
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N04S2-H4.pdf
- Description:
- MOSFET N-CH 40V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,199
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SPB80N04S2-H4 from Infineon Technologies is an N-channel enhancement-mode MOSFET with 40 V VDS, 4 mΩ RDS(on) at VGS = 10 V and 80 A continuous drain current at TC = 25 °C, rated for 175 °C operation and avalanche energy of 660 mJ (single pulse), used in high-current DC-DC power stages and motor drive half-bridges.
For engineers reviewing the SPB80N04S2-H4 datasheet, SPB80N04S2-H4 pinout, SPB80N04S2-H4 application, or SPB80N04S2-H4 equivalent, key selection criteria include its 0.35 K/W typical junction-to-case thermal resistance, 111–148 nC total gate charge, 4430–5890 pF input capacitance, and TO-263-3 package suitability for high-power surface-mount PCB layouts.
Technical Context
This OptiMOS™ power transistor employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous rectification and high-frequency buck converters. Its 5.2 V gate plateau voltage and 53–105 S transconductance support stable gate drive under high di/dt conditions.
The device integrates a robust body diode with 195–240 ns reverse recovery time and 370–460 nC Qrr, enabling reliable operation in hard-switched topologies without external snubbers. Its dv/dt rating of 6 kV/µs ensures immunity to parasitic turn-on in noisy industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage in high-side switch configurations with 20 V margin above 24 V rail systems. |
| RDS(on) | 3.4–4 mΩ @ VGS = 10 V - Enables ≤3.2 W conduction loss at 80 A, critical for thermally constrained 300 W power stages. |
| ID (cont.) | 80 A @ TC = 25 °C - Supports high-current motor phase legs and battery protection circuits without forced air cooling. |
| EAS | 660 mJ - Withstands single-pulse inductive energy from 80 A load interruption at 25 V, eliminating need for external clamping. |
| Qg | 111–148 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers at ≤500 kHz switching. |
| RthJC | 0.35–0.5 K/W - Enables direct heatsink mounting on copper pads; 0.35 K/W typ allows ≤105 °C junction rise at 300 W dissipation. |
| VGS(th) | 2.1–4 V - Ensures clean turn-on with 5 V logic-level gate drive while avoiding spurious activation near ground noise. |
Pinout & Package
SPB80N04S2-H4 uses the P-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed metal tab for low-inductance thermal and electrical path. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | High-impedance control input requiring <100 nA leakage; routed with short, low-inductance trace to minimize ringing. |
| Pin 2 (D) | Drain terminal (exposed tab) | Primary high-current output node; electrically and thermally coupled to PCB copper pour via soldered tab. |
| Pin 3 (S) | Source terminal | Reference node for gate drive; tied to power ground plane with minimal loop area to reduce EMI. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated | 660 mJ single-pulse energy handling eliminates need for external overvoltage clamps in inductive load switching. |
| 175 °C operating temperature | Enables deployment in sealed enclosures or high-ambient environments (e.g., automotive engine bays) without derating. |
| dv/dt rated (6 kV/µs) | Prevents false turn-on during fast voltage transients in motor drives and SMPS, reducing gate driver complexity. |
| Low Qgd/Qg ratio (~42%) | Improves Miller immunity and enables faster, more predictable switching transitions under varying load conditions. |
| Optimized body diode (Qrr = 370–460 nC) | Reduces reverse recovery losses and associated voltage spikes in synchronous rectifier applications. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V step-down conversion in ADAS ECUs with strict thermal limits. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in 300 kHz buck converter stage. Use Value: 4 mΩ RDS(on) reduces conduction loss by >40% vs. comparable 6 mΩ devices, lowering thermal pad size by 35%. |
Use Scenario: Half-bridge leg in 2 kW servo drive operating at 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side power switch with integrated freewheeling diode. Use Value: 195–240 ns trr minimizes shoot-through risk and reduces snubber component count. |
| Server VRMs | Battery Protection Circuits |
Use Scenario: Multiphase CPU core voltage regulation delivering up to 200 A per rail. IC Role / Device Role / Timing Role: Power stage switch in 1 MHz interleaved buck topology. Use Value: 111–148 nC Qg enables efficient gate driving with dual-phase controllers like IR35201. |
Use Scenario: Primary overcurrent cutoff in 48 V Li-ion battery packs with 80 A continuous discharge. IC Role / Device Role / Timing Role: Solid-state main disconnect switch with bidirectional fault sensing. Use Value: 660 mJ EAS withstands fuseless short-circuit events up to 20 ms at full pack voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 3.7 mΩ, Qg = 135 nC, TO-263 package, 175 °C rating | Slightly higher gate charge increases driver loss; identical thermal footprint and avalanche capability | Preferred when gate drive voltage is limited to 5 V due to lower VGS(th) (1.5–2.5 V). |
| IXTP80N04T4 | RDS(on) = 4.2 mΩ, Qg = 92 nC, TO-220 package, 175 °C rating | Lower gate charge but TO-220 requires through-hole mounting and has higher RthJA (62 K/W vs. 40 K/W on PCB) | Selected where manual assembly or legacy board layout prohibits D²PAK rework. |
Compared with STL220N4F7AG and IXTP80N04T4, SPB80N04S2-H4 delivers the lowest RDS(on) in D²PAK form factor and best balance of gate charge and thermal performance for automated SMT production of high-power density modules.
Availability
SPB80N04S2-H4 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply across multi-year production cycles.
Supply support for SPB80N04S2-H4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.
This device belongs to the OptiMOS™ 40 V product line, engineered specifically for high-efficiency, high-current power conversion in space-constrained applications such as EV onboard chargers and telecom rectifiers.
FAQ
What is the maximum safe operating temperature for SPB80N04S2-H4?
The device is rated for continuous operation from –55 °C to +175 °C junction temperature. Its 175 °C limit allows full 80 A current capability at case temperatures up to 125 °C when mounted on a 6 cm² copper area, verified per DIN IEC 68-1 climatic category 55/175/56.
Does SPB80N04S2-H4 require a gate resistor for stability?
Yes - a 1.3 Ω gate resistor is specified in the datasheet for dynamic characterization (e.g., td(on)/td(off) measurements). For production use, values between 2.2 Ω and 10 Ω are typical to dampen gate oscillation while maintaining ≤500 kHz switching efficiency, depending on driver strength and PCB layout inductance.
Can SPB80N04S2-H4 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (increasing from ~3.4 mΩ at 25 °C to ~7.5 mΩ at 150 °C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB copper pours, and individual source resistors (≤10 mΩ) for current sensing and balancing.
Is the body diode suitable for synchronous rectification?
Yes - the integrated body diode has a forward voltage of 0.9–1.3 V at 80 A and reverse recovery charge of 370–460 nC, making it viable for synchronous rectification in 100–500 kHz buck converters. However, external Schottky diodes remain preferred for <100 kHz or ultra-low VF requirements.
SPB80N04S2-H4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 148 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5890 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N04S2-H4 FAQ
1.How can I place an order for SPB80N04S2-H4 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N04S2-H4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N04S2-H4 reliable?
The price and inventory of SPB80N04S2-H4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N04S2-H4 is usually 5 days.
3.What payment methods are accepted for SPB80N04S2-H4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N04S2-H4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N04S2-H4?
SPB80N04S2-H4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N04S2-H4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N04S2-H4?
For technical support, including SPB80N04S2-H4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N04S2-H4 requirements.
6.How does Aetrix verify that SPB80N04S2-H4 is sourced from the original manufacturer or authorized distributors?
All SPB80N04S2-H4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N04S2-H4 meets industry standards.
7.What is the process for return or replacement of SPB80N04S2-H4?
All SPB80N04S2-H4 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N04S2-H4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N04S2-H4 part is unused and in its original packaging.
Return procedure for SPB80N04S2-H4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SPB80N04S2-H4 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
