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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S08ATMA1

Name: SPB80N06S08ATMA1
Brand: Infineon Technologies
SKU: SPB80N06S08ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S08ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S08ATMA1.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,575

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Product details

Overview

SPB80N06S08ATMA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 7.7 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified and supports automotive motor control, DC-DC converters, and high-current switching in industrial power supplies.

For engineers reviewing the SPB80N06S08ATMA1 datasheet, SPB80N06S08ATMA1 pinout, SPB80N06S08ATMA1 application, or SPB80N06S08ATMA1 equivalent, key selection criteria include its 175 °C maximum junction temperature, 6 kV/µs dv/dt rating, repetitive avalanche capability up to T_jmax, and low gate charge (Q_g = 125–187 nC) for fast switching with reduced drive loss.

Technical Context

This MOSFET employs a trench-based SIPMOS® structure optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (2.1–4.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility, and its 540 pF Crss enables controlled turn-off with minimal voltage overshoot under high di/dt conditions.

The device integrates a monolithic body diode with 105 ns reverse recovery time and 30 nC Q_rr, supporting synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations. Thermal resistance R_thJC of 0.38–0.5 K/W allows efficient heat transfer to external heatsinks in high-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V systems and 36 V automotive rails.
R_DS(on) max	7.7 mΩ @ V_GS = 10 V - Enables ≤6.2 W conduction loss at 80 A, critical for thermal management in compact power stages.
I_D cont	80 A @ T_C = 25 °C - Sustained current capability without derating when mounted on ≥6 cm² copper area per JEDEC standards.
Q_g	125–187 nC - Determines gate driver power requirement and switching speed; lower Q_g reduces E_sw in high-frequency operation.
E_AS	700 mJ single-pulse - Withstands inductive energy spikes in motor drives without failure, eliminating need for external snubbers in many cases.
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on during fast voltage transients in high-noise environments like engine control units.
T_j max	175 °C - Supports operation in under-hood automotive locations and sealed industrial enclosures without forced cooling.

Pinout & Package

SPB80N06S08ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed metal tab for low-inductance, high-current thermal path. The three terminals are arranged in a single-row configuration compatible with automated PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return node for channel current	Low-impedance connection point for load return path; referenced for gate drive and feedback sensing.
2 (Gate)	Control input for channel modulation	High-impedance terminal requiring <20 V absolute rating; sensitive to ESD and ringing-requires RC snubber near driver.
3 (Drain)	Main power output node	Internally bonded to large copper tab; must be soldered to ≥6 cm² PCB copper for thermal compliance and current handling.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including EPS, HVAC blowers, and transmission solenoid drivers.
Repetitive avalanche rating	Rated for unlimited repetitive avalanche events up to T_j = 175 °C, enabling robustness in inductive load switching without external protection.
Low Crss (540 pF)	Minimizes Miller effect-induced gate oscillation and improves turn-off controllability in high-side switching configurations.
MSL1 reflow rating	Withstands peak reflow temperatures up to 260 °C, ensuring compatibility with lead-free PCB assembly processes without delamination risk.
Integrated body diode	Optimized for 105 ns t_rr and 30 nC Q_rr, supporting efficient freewheeling in synchronous buck and half-bridge topologies.

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 12 V/24 V brushed DC motors in electric power steering (EPS) and radiator fan modules.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor direction and PWM speed regulation.

Use Value: 80 A current capability and 175 °C T_j enable direct integration into compact motor driver modules without external heatsinking.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V telecom and server DC-DC converters.

IC Role / Device Role / Timing Role: Hard-switched power FET in forward or active-clamp flyback topologies operating at 100–300 kHz.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, improving efficiency above 94% at full load.

On-Board Charger (OBC) Input Stage

High-Current Solid-State Relays

Use Scenario: AC rectification and PFC boost switch in bidirectional EV on-board chargers.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling 6–10 kW peak power with high dv/dt immunity.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during line-voltage transients; avalanche energy rating absorbs PFC inductor energy.

Use Scenario: Replacing electromechanical relays in industrial PLC output modules and battery disconnect units.

IC Role / Device Role / Timing Role: Bidirectional load switch providing galvanic isolation and zero-crossing switching via external control logic.

Use Value: Integrated body diode and 320 A pulsed current support enable reliable hot-swap and fault-current interruption without external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S4-07	Lower R_DS(on) (5.7 mΩ), higher Q_g (160–230 nC), same PG-TO263-3-2 package	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz), high-current applications	Select when thermal budget is tighter than switching loss budget; verify gate driver capability for higher Q_g.
STP80NF55-08	Higher R_DS(on) (8.5 mΩ), lower Q_g (105 nC), TO-220 package	Limited to 100 °C T_j and non-automotive qualification; requires through-hole mounting and larger heatsink	Use only in cost-sensitive, non-automotive industrial designs where AEC-Q101 and surface-mount are not required.

Compared with IPB80N06S4-07 and STP80NF55-08, SPB80N06S08ATMA1 delivers balanced conduction-switching trade-off, automotive qualification, and surface-mount reliability-making it optimal for space-constrained, high-reliability 48 V system switches.

Availability

SPB80N06S08ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and on-board charger input stages requiring stable component supply across multi-year production cycles.

Supply support for SPB80N06S08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the SIPMOS® Power-Transistor product line, designed specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum gate-source voltage rating for SPB80N06S08ATMA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive should be limited to 10–15 V for optimal R_DS(on) and reliability, with transient spikes clamped using Zener diodes or integrated gate drivers with overvoltage protection.

Does SPB80N06S08ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is essential to dampen ringing and control dV/dt during switching. For typical 100–300 kHz operation with a 2 A gate driver, a 2.4 Ω resistor (as used in the datasheet's E_AS test condition) provides stable turn-on/turn-off while minimizing shoot-through risk in half-bridge configurations.

Can SPB80N06S08ATMA1 be used in parallel configurations?

Yes, but only with careful layout and gate drive design. Matching R_DS(on) tolerance (±20%), symmetrical PCB routing, individual gate resistors, and Kelvin source connections are required to ensure current sharing. Thermal coupling between devices must also be minimized to avoid thermal runaway.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has a typical V_SD of 0.9–1.3 V and t_rr of 105 ns, making it usable for low-duty-cycle freewheeling. However, for high-efficiency synchronous rectification above 200 kHz, an external Schottky diode or dedicated synchronous MOSFET is preferred due to lower forward drop and faster recovery.

SPB80N06S08ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 187 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S08ATMA1 FAQ

1.How can I place an order for SPB80N06S08ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S08ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S08ATMA1 reliable?

The price and inventory of SPB80N06S08ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S08ATMA1 is usually 5 days.

3.What payment methods are accepted for SPB80N06S08ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S08ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S08ATMA1?

SPB80N06S08ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S08ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S08ATMA1?

For technical support, including SPB80N06S08ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S08ATMA1 requirements.

6.How does Aetrix verify that SPB80N06S08ATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S08ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S08ATMA1 meets industry standards.

7.What is the process for return or replacement of SPB80N06S08ATMA1?

All SPB80N06S08ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S08ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S08ATMA1 part is unused and in its original packaging.

Return procedure for SPB80N06S08ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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