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Infineon Technologies SPB80N06S2-07

Part No.:
SPB80N06S2-07
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSPB80N06S2-07.pdf
Description:
MOSFET N-CH 55V 80A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,391

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Product details

Overview

SPB80N06S2-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 55 V VDS, 6.6 mΩ RDS(on) at VGS = 10 V and ID = 68 A, with 175 °C maximum junction temperature and avalanche-rated operation. It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SPB80N06S2-07 datasheet, SPB80N06S2-07 pinout, SPB80N06S2-07 application, or SPB80N06S2-07 equivalent, key selection criteria include its 80 A continuous drain current capability, 530 mJ single-pulse avalanche energy, dv/dt ruggedness of 6 kV/µs, and thermal resistance of 0.4–0.6 K/W (junction-to-case), critical for high-reliability power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency synchronous rectification and PWM-driven loads. Its gate threshold voltage (2.1–4.0 V) ensures robust turn-on under wide supply conditions, while the 86–110 nC total gate charge supports efficient gate driver sizing.

The device integrates a fast, soft-recovery body diode (trr = 55–70 ns, Qrr = 96–120 nC) and exhibits stable RDS(on) over temperature (12 mΩ at Tj = 175 °C), enabling predictable performance in thermally constrained environments without derating surprises.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 24 V industrial rails
RDS(on)6.6 mΩ max at VGS = 10 V, ID = 68 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements
ID (continuous)80 A at TC = 25 °C - Supports high-current output stages without parallel devices in compact layouts
EAS530 mJ - Withstands single-pulse inductive energy spikes common in motor control and relay driving
dv/dt rating6 kV/µs - Ensures reliable operation under fast voltage transients without spurious turn-on
Qg86–110 nC - Determines gate driver peak current demand; enables <100 ns switching with 1 A drivers
Tj max175 °C - Allows sustained operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

SPB80N06S2-07 uses the P-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab on the backside.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control inputReceives 10 V logic-level signal to fully enhance channel; requires <110 nC charge for full turn-on
Drain (D)High-side switch nodeConnected to PCB copper area ≥6 cm² for thermal dissipation; carries full load current and voltage stress
Source (S)Reference return pathServes as local ground reference for gate drive; must be low-inductance to avoid oscillation during switching

Key Features

FeatureDesign Value
Avalanche rated530 mJ single-pulse energy handling - eliminates need for external snubbers in inductive load switching
dv/dt ruggedness6 kV/µs - prevents false triggering during fast bus transients in motor drives and UPS systems
Body diode recoverytrr = 55–70 ns, Qrr = 96–120 nC - Reduces switching loss and EMI in synchronous buck and half-bridge topologies
Thermal resistanceRthJC = 0.4–0.6 K/W - Enables >200 W power dissipation with modest heatsinking on standard FR4 PCBs

Applications

Motor Drive Inverter StageIndustrial DC-DC Converter

Use Scenario: High-efficiency 3-phase inverter for 400 W–2 kW brushless DC motors in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules, operating at 20–50 kHz PWM frequency.

Use Value: 6.6 mΩ RDS(on) reduces conduction loss by >30% vs. comparable 8 mΩ parts, lowering thermal stress on gate drivers and magnetics.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V input, 12 V/60 A output telecom power supply.

IC Role / Device Role / Timing Role: High-current, low-loss power switch in active clamp forward or phase-shifted full-bridge topology.

Use Value: 80 A continuous rating and 175 °C Tj allow full-load operation without forced air, supporting fanless system designs.

Automotive Body Control ModuleUPS Output Stage

Use Scenario: Load switch for high-power lighting and solenoid actuation in 24 V commercial vehicle ECUs.

IC Role / Device Role / Timing Role: Protected high-side switch replacing mechanical relays, controlled via microcontroller GPIO with PWM dimming.

Use Value: Avalanche rating absorbs inductive kickback from 200 W lamp loads, eliminating need for external TVS clamping.

Use Scenario: Bidirectional power switch in online double-conversion UPS output inverter stage.

IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) MOSFET in H-bridge configuration delivering clean 230 VAC sine wave.

Use Value: 6 kV/µs dv/dt immunity prevents false turn-on during zero-crossing transitions, improving waveform fidelity and reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFB4115PBFRDS(on) = 7.5 mΩ, VDS = 55 V, Qg = 120 nC, TO-220 packageHigher gate charge increases driver loss; through-hole mounting limits board densitySelect when legacy through-hole assembly or lower-cost procurement is prioritized over thermal performance
STL220N6F7RDS(on) = 5.2 mΩ, VDS = 60 V, Qg = 105 nC, PowerFLAT 8x8 packageLower RDS(on) but no avalanche rating; smaller footprint demands tighter layout controlSelect when maximum efficiency at light loads is critical and inductive energy management is handled externally

Compared with IRFB4115PBF and STL220N6F7, SPB80N06S2-07 uniquely balances avalanche ruggedness, surface-mount thermal performance, and gate drive efficiency-making it optimal for space-constrained, high-reliability industrial inverters where both transient immunity and steady-state loss matter.

Availability

SPB80N06S2-07 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for SPB80N06S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The OptiMOS™ product line targets high-efficiency power conversion in industrial, computing, and transportation systems, emphasizing low RDS(on), fast switching, and ruggedness for demanding real-world loads.

FAQ

What is the maximum safe operating temperature for SPB80N06S2-07?

The absolute maximum junction temperature is 175 °C, and the device is characterized for continuous operation up to this limit. Thermal design must ensure that actual Tj stays below 175 °C under worst-case ambient and power dissipation conditions, using the specified RthJC = 0.4–0.6 K/W and appropriate PCB copper area.

Does SPB80N06S2-07 require a gate resistor for stability?

Yes-a gate resistor (typically 3.3–10 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. The datasheet specifies switching times (e.g., tr = 37–56 ns) with RG = 3.3 Ω, confirming its use in validated test circuits for reliable high-speed operation.

Can SPB80N06S2-07 replace older TO-220 MOSFETs in existing designs?

It can replace TO-220 parts like SPP80N06S2-07 in new layouts, but direct drop-in replacement is not possible due to different footprints (D²PAK vs. TO-220). Thermal and electrical performance is superior, but PCB redesign and gate drive revalidation are required to leverage its full capabilities.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has trr = 55–70 ns and Qrr = 96–120 nC, making it suitable for synchronous rectification in buck and flyback converters up to ~100 kHz. However, for highest efficiency above 200 kHz, an external Schottky diode may still be preferred to minimize reverse recovery loss.

SPB80N06S2-07 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id:
4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4540 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

SPB80N06S2-07 FAQ

1.How can I place an order for SPB80N06S2-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2-07 reliable?

The price and inventory of SPB80N06S2-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2-07 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2-07?

SPB80N06S2-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2-07?

For technical support, including SPB80N06S2-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2-07 requirements.

6.How does Aetrix verify that SPB80N06S2-07 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2-07 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2-07?

All SPB80N06S2-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2-07 part is unused and in its original packaging.

Return procedure for SPB80N06S2-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPB80N06S2-07 Tags

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