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Infineon Technologies SPB80N06S2-09
- Part No.:
- SPB80N06S2-09
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N06S2-09.pdf
- Description:
- MOSFET N-CH 55V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,931
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Product details
Overview
SPB80N06S2-09 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V VDS, 9.1 mΩ RDS(on) at VGS = 10 V, and 80 A continuous drain current at TC = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters, motor drives, and industrial power switches.
For engineers reviewing the SPB80N06S2-09 datasheet, SPB80N06S2-09 pinout, SPB80N06S2-09 application, or SPB80N06S2-09 equivalent, key selection criteria include RDS(on) vs. temperature stability, safe operating area (SOA) under pulsed load, gate charge profile for switching loss estimation, and TO263-3 thermal performance on PCB copper area.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its 7.6–9.1 mΩ RDS(on) range reflects process variation at 25 °C with VGS = 10 V, and RDS(on) increases to ~18 mΩ at Tj = 175 °C per Figure 9 - critical for thermal design margining.
The device integrates a robust body diode with 0.9–1.3 V VSD at IF = 80 A and 50–63 ns trr, enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in 48 V systems. |
| RDS(on) | 9.1 mΩ max at VGS = 10 V, Tj = 25 °C - Determines conduction loss: ~5.8 W at 80 A DC, requiring heatsinking. |
| ID (cont) | 80 A at TC = 25 °C - Valid only with case temperature maintained at 25 °C; derates to ~70 A at TC = 100 °C. |
| EAS | 370 mJ single-pulse avalanche energy - Enables unclamped inductive switching survival in relay drivers or solenoid controls. |
| Qg | 60–80 nC total gate charge - Directly impacts gate driver power and switching speed; requires ≥2 A peak drive for <50 ns rise/fall. |
| RthJC | 0.52–0.8 K/W - Junction-to-case thermal resistance defines minimum heatsink interface requirement for 190 W Ptot. |
| tr/tf | 29–44 ns / 28–42 ns - Fast switching enables >200 kHz operation in resonant and hard-switched SMPS designs. |
Pinout & Package
SPB80N06S2-09 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection. The package supports high-current PCB mounting using ≥6 cm² copper area per Figure 2 footnote 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET control node; requires 10 V for full enhancement; sensitive to ESD. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 370 mJ single-pulse energy tolerance enables reliable unclamped inductive turn-off without snubbers. |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without derating to 150 °C. |
| dv/dt ruggedness | 6 kV/µs immunity prevents false turn-on during fast voltage transients in motor drive half-bridges. |
| Low gate charge (Qg) | 60–80 nC reduces gate driver losses and simplifies selection of cost-effective 2 A drivers like IRS2007. |
| Optimized body diode | 50–63 ns reverse recovery time and 76–95 nC Qrr enable efficient freewheeling in synchronous rectifiers. |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
Use Scenario: 3-phase BLDC inverter stage in HVAC compressors or conveyor drives operating at 48 V bus. IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module; handles 80 A peak phase current. Use Value: 9.1 mΩ RDS(on) minimizes conduction loss at 25 °C; SOA curve supports 1 ms overload pulses up to 320 A. | Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC module. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes; driven by transformer-coupled gate signal. Use Value: Body diode VSD = 0.9–1.3 V and trr = 50–63 ns reduce forward and recovery losses versus discrete diodes. |
| Automotive Battery Disconnect | UPS Power Switch |
Use Scenario: High-side battery protection switch in 48 V mild-hybrid vehicle subsystems. IC Role / Device Role / Timing Role: Load switch controlling power to ADAS ECUs; activated via isolated gate driver. Use Value: Avalanche rating ensures survivability during load dump transients; 175 °C rating accommodates under-hood ambient. | Use Scenario: Static transfer switch in online UPS handling 3 kW backup load. IC Role / Device Role / Timing Role: Bidirectional power path switch enabling seamless mains/battery switchover. Use Value: 320 A pulsed current rating supports short-circuit ride-through; low RDS(on) limits thermal stress during extended overload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80N06S2-09 | Same die, identical RDS(on), Qg, and SOA; differs only in TO263-3 marking and ordering code. | No functional difference; qualified for same automotive and industrial use cases. | Select when sourcing from alternate Infineon distribution channels or legacy BOM alignment required. |
| STP80NF55-08 | 55 V VDS, 8.5 mΩ RDS(on), but higher Qg (105 nC) and lower EAS (250 mJ). | Limited avalanche robustness and slower switching make it less suitable for inductive loads with high di/dt. | Consider only if gate drive capability exceeds 3 A and avalanche stress is absent in system topology. |
Compared with IPB80N06S2-09, SPB80N06S2-09 offers identical performance and qualification - differing only in packaging traceability; versus STP80NF55-08, it delivers superior dv/dt immunity and avalanche energy margin at the cost of slightly higher gate drive demand.
Availability
SPB80N06S2-09 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive battery management systems requiring stable component supply and long-term lifecycle support.
Supply support for SPB80N06S2-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.
SPB80N06S2-09 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-efficiency, high-current switching in industrial and automotive power conversion systems.
FAQ
What is the maximum allowable gate-source voltage for SPB80N06S2-09?
The absolute maximum VGS is ±20 V per datasheet Page 1. Operation beyond ±20 V risks permanent gate oxide damage. Recommended drive is 10–15 V for full enhancement with margin; gate resistors should limit dV/dt to avoid oscillation during switching transitions.
Can SPB80N06S2-09 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (Figure 6) enables current sharing across paralleled units. Thermal coupling between devices must be matched, and individual gate resistors (≥10 Ω) are required to suppress oscillation and ensure simultaneous turn-on/turn-off.
Is SPB80N06S2-09 suitable for linear mode operation?
No - it is not characterized or guaranteed for linear (active region) operation. The Safe Operating Area (SOA) curve on Page 4 applies only to switching conditions; sustained linear operation risks thermal runaway due to localized hot-spot formation in the trench cell structure.
What PCB layout recommendations apply to the TO263-3 package?
The drain pad must be connected to ≥6 cm² of 70 µm thick copper on FR4 (per Page 2 footnote 3), with thermal vias to inner/ground planes. Source and gate traces require low-inductance routing; gate loop area should be minimized to reduce EMI and ringing. A 100 nF ceramic decoupling capacitor must be placed within 5 mm of the source pin.
SPB80N06S2-09 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N06S2-09 FAQ
1.How can I place an order for SPB80N06S2-09 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N06S2-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N06S2-09 reliable?
The price and inventory of SPB80N06S2-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2-09 is usually 5 days.
3.What payment methods are accepted for SPB80N06S2-09?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2-09 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N06S2-09?
SPB80N06S2-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N06S2-09 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N06S2-09?
For technical support, including SPB80N06S2-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2-09 requirements.
6.How does Aetrix verify that SPB80N06S2-09 is sourced from the original manufacturer or authorized distributors?
All SPB80N06S2-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2-09 meets industry standards.
7.What is the process for return or replacement of SPB80N06S2-09?
All SPB80N06S2-09 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2-09, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N06S2-09 part is unused and in its original packaging.
Return procedure for SPB80N06S2-09:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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