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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2-H5

Name: SPB80N06S2-H5
Brand: Infineon Technologies
SKU: SPB80N06S2-H5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2-H5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2-H5.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,258

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Product details

Overview

SPB80N06S2-H5 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.5 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating (700 mJ single-pulse), 175 °C maximum junction temperature, and TO-263-3 (D²PAK) surface-mount package. Used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N06S2-H5 datasheet, SPB80N06S2-H5 pinout, SPB80N06S2-H5 application, or SPB80N06S2-H5 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 155 nC max), diode reverse recovery (Q_rr = 163 nC), and thermal resistance (R_thJC = 0.5 K/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 4.6–5.5 mΩ R_DS(on) range at 80 A/10 V enables high-efficiency operation in 12–48 V systems, while dV/dt immunity of 6 kV/µs supports robust noise immunity in noisy industrial environments.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 60–75 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus applications with 20 % margin
R_DS(on) max	5.5 mΩ at V_GS = 10 V, I_D = 80 A - Enables ≤4.4 W conduction loss at full load
I_D cont	80 A at T_C = 25 °C - Requires heatsinking to sustain >50 A at elevated ambient temperatures
E_AS	700 mJ single-pulse - Supports unclamped inductive switching in relay drivers and solenoid controls
Q_g	155 nC max - Determines gate driver power requirement (~1.55 mC total charge per 10 kHz switching cycle)
R_thJC	0.5 K/W max - Allows 300 W dissipation with ≤150 K case-to-junction rise at steady state
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard 5 V logic-level gate drivers

Pinout & Package

Packaged in TO-263-3 (D²PAK) surface-mount outline with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal requiring <100 nA leakage; driven by dedicated MOSFET gate driver IC
Pin 2 (D)	Drain	Exposed copper tab - electrically connected to drain; must be soldered to PCB copper pour for thermal and current path
Pin 3 (S)	Source	Low-side reference node; connects to power ground or low-side switch node in half-bridge configurations

Key Features

Feature	Design Value
Avalanche-rated operation	700 mJ single-pulse energy handling - eliminates need for external snubbers in inductive load switching
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating below 125 °C
Low Q_gd/Q_g ratio	72 nC/155 nC - improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions
Optimized body diode	Q_rr = 163 nC, t_rr = 75 ns - minimizes switching losses and EMI in synchronous rectifier designs
dv/dt ruggedness	6 kV/µs - withstands rapid voltage transients in motor drives and power supply input stages

Applications

Motor Drive Half-Bridge

High-Current DC-DC Converter

Use Scenario: 48 V BLDC motor control in automated guided vehicles (AGVs) with peak currents up to 320 A pulsed.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg; commutated at 10–20 kHz with dead-time control.

Use Value: 5.5 mΩ R_DS(on) limits conduction loss to <1.4 W at 200 A, reducing heatsink mass by 35 % vs. 8 mΩ alternatives.

Use Scenario: 12 V → 1 V, 100 A point-of-load converter in telecom base station power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck topology; switched at 500 kHz with adaptive gate timing.

Use Value: 163 nC Q_rr and 0.9 V V_SD reduce reverse recovery loss by 42 % compared to standard FRDs, improving efficiency by 1.3 % at full load.

Industrial Power Supply Output Stage

Solenoid & Relay Driver

Use Scenario: Secondary-side synchronous rectification in 3 kW server PSU with 54 V output and 55 A continuous current.

IC Role / Device Role / Timing Role: High-current output switch operating in continuous conduction mode with zero-voltage switching assist.

Use Value: 700 mJ E_AS rating allows safe operation during output short-circuit events without device failure.

Use Scenario: 24 V DC solenoid actuation in factory automation valves with 80 A inrush and 320 A pulsed hold current.

IC Role / Device Role / Timing Role: Unclamped inductive switch with integrated avalanche energy absorption.

Use Value: Eliminates external TVS/clamp diodes; reduces BOM count by one component and PCB area by 12 mm².

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 140 nC; TO-220 package	Higher thermal resistance (R_thJC = 0.75 K/W); lower current density per mm²	Preferred where through-hole mounting and legacy footprint compatibility are required
STL110N5LF6	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 170 nC; DFN8 5×6 mm package	Lower R_DS(on) but higher gate charge; no integrated avalanche rating	Selected when conduction loss dominates and avalanche robustness is not critical

Compared with IRFB4115PBF and STL110N5LF6, SPB80N06S2-H5 delivers optimal balance of low R_DS(on), certified avalanche capability, and surface-mount thermal performance-making it preferred for space-constrained, high-reliability industrial power stages where both efficiency and fault tolerance are mandatory.

Availability

SPB80N06S2-H5 is available at Aetrix Electronics and suitable for motor drives, high-current DC-DC converters, industrial power supplies, and solenoid drivers requiring stable component supply and long-term production continuity.

Supply support for SPB80N06S2-H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB80N06S2-H5 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-current, high-efficiency switching in 12–48 V industrial and transportation systems.

FAQ

What is the maximum allowable gate-source voltage for SPB80N06S2-H5?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions.

Can SPB80N06S2-H5 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures current sharing stability across paralleled units. Thermal coupling between devices must be minimized via symmetrical PCB layout and shared heatsink; gate resistors ≥2.4 Ω per device are recommended to suppress oscillation.

Does SPB80N06S2-H5 have a qualified AEC-Q101 rating?

No-SPB80N06S2-H5 is not AEC-Q101 qualified. It is specified for industrial temperature range (–55 °C to +175 °C) and intended for non-automotive applications such as factory automation, UPS, and telecom infrastructure.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The body diode Q_rr is 130–163 nC at T_j = 25 °C, measured under V_R = 30 V, I_F = I_S, and di_F/dt = 100 A/µs. This value increases ~15 % at 125 °C junction temperature and directly impacts switching loss in synchronous rectifier operation.

SPB80N06S2-H5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2-H5 FAQ

1.How can I place an order for SPB80N06S2-H5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2-H5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2-H5 reliable?

The price and inventory of SPB80N06S2-H5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2-H5 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2-H5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2-H5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2-H5?

SPB80N06S2-H5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2-H5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2-H5?

For technical support, including SPB80N06S2-H5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2-H5 requirements.

6.How does Aetrix verify that SPB80N06S2-H5 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2-H5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2-H5 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2-H5?

All SPB80N06S2-H5 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2-H5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2-H5 part is unused and in its original packaging.

Return procedure for SPB80N06S2-H5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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