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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-05

Name: SPB80N06S2L-05
Brand: Infineon Technologies
SKU: SPB80N06S2L-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-05.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,955

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Product details

Overview

SPB80N06S2L-05 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO263-3 (D²PAK) package, rated for 55 V V_DS, 4.5 mΩ R_DS(on) at V_GS = 4.5 V and I_D = 80 A, avalanche-rated, and optimized for high-current DC-DC converters and motor control stages.

For engineers reviewing the SPB80N06S2L-05 datasheet, SPB80N06S2L-05 pinout, SPB80N06S2L-05 application, or SPB80N06S2L-05 equivalent, key selection criteria include its low gate threshold (1.2–2.0 V), 6 kV/µs dv/dt rating, 800 mJ single-pulse avalanche energy, and SMD-compatible thermal resistance (R_thJC = 0.3–0.5 K/W).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust switching performance: typical C_iss = 5700 pF, Q_g = 170–230 nC, and t_r/t_f = 93/90 ns under 80 A load. Its logic-level drive enables direct interfacing with 3.3 V and 5 V microcontrollers without gate drivers.

The MOSFET integrates a fast-recovery body diode (t_rr = 65–80 ns, Q_rr = 125–160 nC) and supports repetitive avalanche operation up to 30 mJ per pulse. Thermal design is enabled by its low junction-to-case resistance and compatibility with standard FR4 PCB layouts using ≥6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with margin
R_DS(on) @ V_GS = 4.5 V	4.5 mΩ max - Enables <1 W conduction loss at 80 A in high-efficiency power stages
I_D (continuous)	80 A @ T_C = 25 °C - Supports high-current loads without external heatsink at moderate ambient
E_AS	800 mJ - Withstands single-pulse inductive energy spikes in motor drives and solenoid controls
dv/dt rating	6 kV/µs - Ensures reliable operation in noisy industrial environments without false turn-on
Q_g	170–230 nC - Determines gate driver current requirement (~1.7–2.3 A peak for 100 ns rise time)
V_GS(th)	1.2–2.0 V - Compatible with 3.3 V logic outputs; ensures full enhancement at standard MCU IO levels

Pinout & Package

SPB80N06S2L-05 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged as Drain (Tab), Source (Pin 1), and Gate (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / high-side switch node	Electrically and thermally connected to large copper area on PCB; carries full load current
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring
Gate (Pin 2)	Control input for channel conduction	Requires low-impedance drive due to 230 nC total charge; sensitive to ESD (±20 V rating)

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V microcontroller outputs - eliminates need for level-shifting circuitry
Avalanche-rated	Guaranteed 800 mJ single-pulse energy handling - enables robustness in inductive load switching without snubbers
Low R_DS(on) × Q_g figure of merit	~1.03 Ω·nC - balances conduction and switching losses for high-frequency (>100 kHz) SMPS designs
Fast body diode	t_rr = 65–80 ns, Q_rr = 125–160 nC - reduces reverse recovery loss and EMI in synchronous rectification
dv/dt ruggedness	6 kV/µs - prevents parasitic turn-on during high-slew-rate transients in half-bridge configurations

Applications

Brushless DC Motor Drive

48 V DC-DC Converter

Use Scenario: High-power BLDC inverter stage for e-bike controllers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge; commutated at 10–20 kHz.

Use Value: 4.5 mΩ R_DS(on) limits conduction loss to ≤2.9 W at 80 A, enabling compact thermal design without forced air.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V buck-boost converter.

IC Role / Device Role / Timing Role: High-current, high-efficiency power switch in hard-switched topology.

Use Value: Logic-level gate allows direct PWM control from 3.3 V MCU; 800 mJ E_AS absorbs leakage inductance spikes.

Automotive Body Control Module

Industrial Solenoid Driver

Use Scenario: Load switch for high-current accessories (headlights, HVAC fans) in 12/24 V vehicle systems.

IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated diagnostics.

Use Value: Avalanche rating and -55 °C to +175 °C operating range meet AEC-Q101 requirements for under-hood use.

Use Scenario: Fast-acting driver for hydraulic/pneumatic solenoids in factory automation equipment.

IC Role / Device Role / Timing Role: Switching element controlling 80 A inductive loads with 100 µs turn-off.

Use Value: 6 kV/µs dv/dt rating prevents false triggering during rapid coil de-energization; 320 A pulsed rating handles surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8720PbF	R_DS(on) = 5.2 mΩ @ 4.5 V; higher Q_g (210 nC); no specified dv/dt rating	Limited to lower-frequency (<50 kHz) switching due to slower switching and lack of dv/dt validation	Acceptable where avalanche energy margin and high-speed dv/dt immunity are not required
STP80NF55-08	R_DS(on) = 6.5 mΩ @ 4.5 V; 100% avalanche tested but E_AS = 500 mJ; TO220 package only	Requires through-hole mounting and larger heatsink; unsuitable for space-constrained SMD designs	Preferred for cost-sensitive, non-SMD legacy designs where 55 V/80 A capability suffices

Compared with IRF8720PbF and STP80NF55-08, SPB80N06S2L-05 delivers superior thermal performance via D²PAK packaging, higher avalanche robustness (800 vs. 500 mJ), and validated dv/dt immunity-making it optimal for high-reliability, high-density, and high-noise industrial power stages.

Availability

SPB80N06S2L-05 is available at Aetrix Electronics and suitable for brushless DC motor drives, 48 V DC-DC converters, and automotive body control modules requiring stable component supply across production lifecycles.

Supply support for SPB80N06S2L-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

SPB80N06S2L-05 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to approximately 55 A, based on the ID vs. TC curve (Page 4, Figure 2). This reflects thermal limitation of the TO263-3 package's junction-to-case thermal resistance (0.3–0.5 K/W) and safe operating area constraints.

Is SPB80N06S2L-05 suitable for synchronous rectification in a 100 kHz LLC resonant converter?

Yes - its 65–80 ns reverse recovery time, low Q_rr (125–160 nC), and 4.5 mΩ R_DS(on) enable efficient synchronous rectification at 100 kHz. However, layout must minimize source inductance to preserve fast switching and avoid shoot-through risk during dead-time transitions.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes - a 1–5 Ω gate resistor is recommended to damp ringing caused by gate-drain capacitance (Crss = 360–540 pF) and PCB trace inductance. Values above 5 Ω increase switching losses; below 1 Ω risks overshoot and potential gate oxide stress during fast edge transitions.

Can SPB80N06S2L-05 replace SPB80N06S2-05 in existing designs?

No - SPB80N06S2-05 has higher R_DS(on) (6.0 mΩ @ 4.5 V) and lacks the "L" suffix indicating logic-level optimization. SPB80N06S2L-05 offers lower V_GS(th) (1.2–2.0 V vs. ~2.0–3.0 V) and improved gate charge profile, requiring verification of drive strength and timing margins before substitution.

SPB80N06S2L-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-05 FAQ

1.How can I place an order for SPB80N06S2L-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-05 reliable?

The price and inventory of SPB80N06S2L-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-05 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-05?

SPB80N06S2L-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-05?

For technical support, including SPB80N06S2L-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-05 requirements.

6.How does Aetrix verify that SPB80N06S2L-05 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-05 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-05?

All SPB80N06S2L-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-05 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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