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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-06

Name: SPB80N06S2L-06
Brand: Infineon Technologies
SKU: SPB80N06S2L-06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-06

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-06.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Inventory:6,034

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Product details

Overview

SPB80N06S2L-06 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.3 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-current DC-DC primary-side switching in industrial power supplies.

For engineers reviewing the SPB80N06S2L-06 datasheet, SPB80N06S2L-06 pinout, SPB80N06S2L-06 application, or SPB80N06S2L-06 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (530 mJ), thermal resistance (R_thJC = 0.6 K/W), and TO263-3 package suitability for high-power PCB mounting.

Technical Context

This OptiMOS™ power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 4.5 V logic-level gate threshold enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The device integrates a robust body diode with 60–76 ns reverse recovery time and 92–115 nC Q_rr, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its specified transient impedance curve and 250 W P_tot at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - supports 48 V nominal bus systems with 15% margin for transients
R_DS(on) @ V_GS = 10 V	6.3 mΩ max - enables <1.5 W conduction loss at 60 A continuous operation
R_DS(on) @ V_GS = 4.5 V	8.4 mΩ max - ensures reliable turn-on with standard logic-level drivers
E_AS	530 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant converters
dv/dt Rating	6 kV/µs - suppresses false turn-on in high-noise motor drive and SMPS environments
Q_g	150 nC max - determines gate driver power requirement and switching speed trade-off
T_j Max	175 °C - allows operation in sealed enclosures or high-ambient industrial settings

Pinout & Package

SPB80N06S2L-06 is housed in a surface-mount TO263-3 (D²PAK) package with isolated drain tab, optimized for thermal transfer to PCB copper planes. The package has three terminals: Gate (G), Drain (D), and Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–20 V logic-level signal; threshold voltage 1.2–2.0 V enables MCU-compatible drive
D	Drain connection	High-current output node; electrically connected to exposed metal tab for thermal and electrical conduction
S	Source reference	Return path for load current; used as common reference for gate drive and current sensing

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees ruggedness under inductive switching stress without external snubbers
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V-eliminates need for gate driver ICs in many 3.3 V/5 V control systems
Low Q_gd/Q_g ratio	38–60 nC / 114–150 nC - improves Miller immunity and reduces switching loss during hard commutation
Optimized body diode	Q_rr = 92–115 nC, t_rr = 60–76 ns - minimizes reverse recovery loss in synchronous buck and half-bridge configurations
Thermal robustness	R_thJC = 0.4–0.6 K/W - enables >200 W power dissipation with 6 cm² PCB copper area per Infineon ANPS071E

Applications

Motor Drive Inverter Stage

Industrial DC-DC Primary Switch

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 48 V bus with 60 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 6-step commutation; handles bidirectional current with body diode conduction during freewheeling.

Use Value: 6.3 mΩ R_DS(on) limits conduction loss to <2.3 W per device at 60 A, reducing heatsink size by 35% vs. 10 mΩ alternatives.

Use Scenario: Primary-side switch in 1 kW isolated forward converter for factory automation PLC power modules.

IC Role / Device Role / Timing Role: Main switching element in hard-switched topology; operates at 100 kHz with 50% duty cycle and 80 A peak current.

Use Value: 530 mJ E_AS absorbs leakage inductance spikes without clamping, enabling simplified transformer design and higher efficiency.

Server PSU OR-ing FET

EV Onboard Charger (OBC) Input Stage

Use Scenario: Hot-swap OR-ing configuration in redundant 12 V/48 V server backplane power distribution.

IC Role / Device Role / Timing Role: Low-loss pass element replacing Schottky diodes; controlled via ideal diode controller.

Use Value: 8.4 mΩ R_DS(on) at 4.5 V gate drive achieves <0.5 V forward drop at 80 A-cutting conduction loss by 70% vs. discrete diodes.

Use Scenario: AC-DC front-end PFC boost switch in 6.6 kW OBC for light-duty EVs.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch handling 80 A pulsed current at 65 kHz.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during high di/dt transitions in interleaved PFC stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; 55 V rating; TO220 package; no avalanche rating	Lacks E_AS spec and dv/dt rating; unsuitable for unclamped inductive loads	Lower cost where avalanche robustness is not required and thermal budget permits larger package
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V; 55 V rating; TO220 package; 175 °C T_j	Higher Q_g (180 nC); slower switching; no logic-level drive (V_GS(th) = 2–4 V)	Better conduction loss but requires gate driver; preferred in fixed-frequency, low-dv/dt applications

Compared with STP80NF55-08 and IRFB4115PBF, SPB80N06S2L-06 uniquely combines logic-level drive, avalanche rating, and 6 kV/µs dv/dt tolerance-making it optimal for compact, high-reliability industrial switchers where gate drive simplicity and fault resilience are critical.

Availability

SPB80N06S2L-06 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for SPB80N06S2L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ family-engineered for high-efficiency, high-current switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

What is the maximum safe operating temperature for SPB80N06S2L-06?

The absolute maximum junction temperature is +175 °C, and the device is characterized for continuous operation across –55 °C to +175 °C. Derating curves for P_tot and I_D versus case temperature are provided on page 4 of the datasheet, with full power (250 W) limited to T_C ≤ 25 °C and 80 A limited to T_C ≤ 25 °C at V_GS ≥ 10 V.

Does SPB80N06S2L-06 require a gate resistor for stability?

Yes-a gate resistor (typically 1.6 Ω, per datasheet test conditions) is recommended to dampen ringing and control dV/dt during switching. The device's Q_gd of 38–60 nC and C_iss of 3800–5050 pF make it susceptible to oscillation without proper gate network design, especially in high-di/dt layouts.

Can SPB80N06S2L-06 be used in parallel configurations?

Yes-the device exhibits positive temperature coefficient for R_DS(on) (see page 9), enabling current sharing when paralleled. However, layout symmetry, matched gate drive paths, and individual gate resistors are mandatory. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has t_rr = 60–76 ns and Q_rr = 92–115 nC, making it viable for synchronous rectification in medium-frequency (≤150 kHz) topologies. However, its V_SD = 0.9–1.3 V at 80 A results in higher conduction loss than discrete Schottky diodes, so system-level efficiency trade-offs must be evaluated.

SPB80N06S2L-06 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-06 FAQ

1.How can I place an order for SPB80N06S2L-06 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-06 reliable?

The price and inventory of SPB80N06S2L-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-06 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-06?

SPB80N06S2L-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-06?

For technical support, including SPB80N06S2L-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-06 requirements.

6.How does Aetrix verify that SPB80N06S2L-06 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-06 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-06?

All SPB80N06S2L-06 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-06 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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