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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-09

Name: SPB80N06S2L-09
Brand: Infineon Technologies
SKU: SPB80N06S2L-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-09

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-09.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

SPB80N06S2L-09 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET rated for 55 V V_DS, 8.5 mΩ R_DS(on) at V_GS = 10 V and 52 A, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N06S2L-09 datasheet, SPB80N06S2L-09 pinout, SPB80N06S2L-09 application, or SPB80N06S2L-09 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy (370 mJ), dv/dt ruggedness (6 kV/µs), thermal resistance (0.52 K/W typ. R_thJC), and TO263-3 package compatibility with high-current PCB layouts.

Technical Context

This OptiMOS™ power transistor uses trench-gate silicon technology optimized for low conduction and switching losses in synchronous rectification and high-frequency PWM applications. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers and gate drivers operating at 3.3 V or 5 V.

The device features fully rated unclamped inductive switching (UIS) capability (E_AS = 370 mJ), robust dv/dt immunity (6 kV/µs), and a fast body diode (t_rr = 57–70 ns, Q_rr = 70–90 nC), supporting hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with margin for transients and ripple
R_DS(on) @ V_GS = 10 V	8.5 mΩ max - enables ≤ 34 W conduction loss at 80 A, critical for thermal management
R_DS(on) @ V_GS = 4.5 V	11.3 mΩ max - ensures usable on-resistance under logic-level MCU drive
I_D continuous @ T_C = 25 °C	80 A - defines PCB copper area and heatsink requirements for full-load operation
E_AS	370 mJ - guarantees single-pulse inductive energy handling without failure in motor control
dv/dt rating	6 kV/µs - prevents false turn-on in high-noise half-bridge or phase-leg configurations
R_thJC	0.52 K/W typ - allows accurate junction-to-case thermal modeling for reliability prediction

Pinout & Package

Packaged in surface-mount TO263-3 (D²PAK) with drain-connected tab for low-inductance, high-current PCB mounting. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Control input requiring <105 nC total gate charge; sensitive to ESD (±20 V rating)
Pin 2 (D)	Drain terminal (exposed tab)	High-current power path; electrically connected to PCB copper pour for thermal and electrical performance
Pin 3 (S)	Source terminal	Reference node for gate drive; forms return path for 80 A load current and body diode conduction

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for level-shifting in 3.3 V/5 V controller designs
Avalanche-rated	370 mJ single-pulse energy rating - enables reliable operation in inductive switching without external clamping
175 °C max junction temperature	Supports high-ambient environments (e.g., automotive engine bays, industrial enclosures) with derated current curves
Fast body diode	t_rr = 57–70 ns, Q_rr = 70–90 nC - reduces switching loss and voltage overshoot in synchronous rectifier and freewheeling roles
dv/dt ruggedness	6 kV/µs rating - suppresses parasitic turn-on during high dV/dt commutation in bridge legs

Applications

Motor Drive Half-Bridge

48 V DC-DC Converter Primary Switch

Use Scenario: High-side and low-side switching in 24–48 V BLDC motor controllers with PWM frequencies up to 100 kHz.

IC Role / Device Role / Timing Role: Power switch in half-bridge topology; handles bidirectional current and reverse recovery during commutation.

Use Value: Low R_DS(on) at 4.5 V and fast body diode minimize conduction and switching losses, improving efficiency by >2% over standard MOSFETs.

Use Scenario: Primary-side switching element in isolated 48 V input, 12 V output LLC resonant converter for telecom and server PSUs.

IC Role / Device Role / Timing Role: High-frequency hard-switched main switch; subjected to repetitive UIS stress and high dv/dt transitions.

Use Value: 6 kV/µs dv/dt rating and 370 mJ E_AS ensure stable operation without false triggering or avalanche failure under transient overload.

Automotive HVAC Blower Control

Industrial PLC Output Stage

Use Scenario: PWM-controlled 48 V blower motor driver in passenger vehicle climate systems, operating continuously at ambient up to 105 °C.

IC Role / Device Role / Timing Role: Low-side switch with integrated freewheeling path; subject to high-current inductive kickback.

Use Value: 175 °C T_jmax and 80 A I_D rating allow compact heatsink design while maintaining lifetime reliability per AEC-Q101 stress profiles.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules driving solenoids and valves.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element interfacing microcontroller GPIO to 24–48 V industrial loads.

Use Value: Logic-level gate enables direct MCU drive; avalanche rating protects against inductive load flyback without external TVS or clamp diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8720PbF	R_DS(on) = 9.8 mΩ @ 10 V; lower Q_g (65 nC); no specified dv/dt rating	Lacks official dv/dt and avalanche ratings - unsuitable for hard-switched inductive loads without external protection	Prefer when gate drive strength is limited and switching frequency >150 kHz, but verify UIS robustness externally
STL220N6LF6	R_DS(on) = 7.5 mΩ @ 10 V; 60 V rating; 175 °C T_jmax; TO263 package	Higher voltage margin and slightly lower R_DS(on), but slower t_r/t_f	Choose for higher bus voltage headroom or tighter R_DS(on) tolerance; accept ~10% higher switching loss in hard-switched apps

Compared with IRF8720PbF and STL220N6LF6, SPB80N06S2L-09 uniquely combines certified 6 kV/µs dv/dt immunity, 370 mJ E_AS, and 4.5 V logic-level operation - making it preferred for automotive and industrial half-bridge designs where reliability under transient stress is non-negotiable.

Availability

SPB80N06S2L-09 is available at Aetrix Electronics and suitable for motor drives, 48 V DC-DC converters, and industrial PLC output stages requiring stable component supply and long-term production continuity.

Supply support for SPB80N06S2L-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ family - engineered specifically for high-efficiency, high-current switching in automotive, industrial, and computing power supplies where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum safe gate-source voltage for SPB80N06S2L-09?

The absolute maximum V_GS is ±20 V. Operation above ±16 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ±15 V with transient suppression, especially in noisy environments like motor drives or industrial inverters where ringing may exceed ratings.

Can SPB80N06S2L-09 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing with junction temperature) enables inherently self-balancing current sharing. Successful parallel operation requires matched layout symmetry, identical gate drive impedance, and shared source inductance minimization to avoid dynamic imbalance during switching transitions.

Is SPB80N06S2L-09 compliant with AEC-Q101 for automotive use?

No - while it meets 175 °C T_jmax and has automotive-grade packaging, SPB80N06S2L-09 is not AEC-Q101 qualified. For automotive applications, Infineon offers the AEC-Q101-qualified SPB80N06S2L-09H variant (same die, qualified test flow), which must be specified separately for safety-critical systems.

What is the recommended minimum PCB copper area for thermal performance?

Per Infineon's ANPS071E, a 6 cm² (e.g., 40 mm × 40 mm) single-layer 70 µm copper area connected to the drain tab achieves R_thJA ≈ 40 K/W. Smaller areas increase thermal resistance significantly - e.g., minimal footprint yields R_thJA ≈ 62 K/W, limiting continuous current to ~45 A at 70 °C ambient.

SPB80N06S2L-09 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 2V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-09 FAQ

1.How can I place an order for SPB80N06S2L-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-09 reliable?

The price and inventory of SPB80N06S2L-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-09 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-09?

SPB80N06S2L-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-09?

For technical support, including SPB80N06S2L-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-09 requirements.

6.How does Aetrix verify that SPB80N06S2L-09 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-09 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-09?

All SPB80N06S2L-09 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-09 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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