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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-11

Name: SPB80N06S2L-11
Brand: Infineon Technologies
SKU: SPB80N06S2L-11
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-11

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-11.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

SPB80N06S2L-11 from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET optimized for automotive and industrial high-current switching, featuring 55 V V_DS, 11 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, AEC-Q101 qualification, and avalanche-rated operation in TO263-3-2 (D²PAK) package.

For engineers reviewing the SPB80N06S2L-11 datasheet, SPB80N06S2L-11 pinout, SPB80N06S2L-11 application, or SPB80N06S2L-11 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, unclamped inductive switching capability, thermal resistance (R_thJC = 0.63 K/W typ), and diode reverse recovery performance (Q_rr = 61–76 nC).

Technical Context

This OptiMOS™ power transistor uses trench-gate superjunction technology to achieve low on-resistance with fast switching and robust dv/dt immunity (6 kV/µs). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The device integrates a co-packaged body diode rated for 80 A continuous forward current and 320 A pulsed current, with t_rr = 54–67 ns and Q_rr = 61–76 nC under defined test conditions (V_R = 30 V, dI_F/dt = 100 A/µs), supporting efficient synchronous rectification and freewheeling in DC-DC converters and motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V system rails with margin.
R_DS(on) @ V_GS = 10 V	8.3–11 mΩ - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages.
R_DS(on) @ V_GS = 4.5 V	10.6–14.7 mΩ - Ensures usable on-state performance with standard logic-level drivers (e.g., MCU GPIO).
E_AS	280 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients.
Q_g	60–80 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
R_thJC	0.63 K/W (typ) - Junction-to-case thermal resistance enables high-power dissipation with minimal heatsink mass.
Q_rr	61–76 nC - Reverse recovery charge directly impacts turn-on loss of synchronous FETs in buck converters.

Pinout & Package

SPB80N06S2L-11 is housed in a surface-mount TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives gate drive signal; threshold voltage range 1.2–2.0 V enables direct MCU interface.
D	Drain (high-side switch node)	Connected to PCB copper area for thermal dissipation; carries full load current and withstands 55 V.
S	Source (return path)	Reference node for gate drive; tied to power ground or low-side switch source in half-bridge topologies.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control, EPS, and battery management systems.
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.5 V, eliminating need for gate driver ICs in many embedded designs.
Avalanche rated	Guaranteed single-pulse energy handling (E_AS = 280 mJ) ensures reliability during inductive switching faults.
dv/dt rated	Immune to false turn-on up to 6 kV/µs, enabling stable operation in noisy high-speed switching environments.
Low R_DS(on) × Q_g figure-of-merit	Optimized for both conduction and switching efficiency in 100 kHz–1 MHz power converters.

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: High-current H-bridge for electric power steering (EPS) actuation.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 12–48 V brushed/BLDC motor drive stage.

Use Value: 80 A continuous current and 320 A pulsed rating support peak torque delivery; AEC-Q101 compliance ensures functional safety compliance.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck converter for server power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: R_DS(on) ≤ 11 mΩ at 10 V reduces forward drop to <0.8 V at 80 A, improving efficiency by >2% vs. diode solution.

Onboard Charger (OBC) Input Stage

Energy Storage System (ESS) Battery Disconnect

Use Scenario: AC-DC front-end PFC boost switch in 6.6 kW EV onboard charger.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch in continuous conduction mode (CCM) boost topology.

Use Value: Low Q_g (60–80 nC) and C_iss (1990–2650 pF) enable clean 100 kHz switching with minimal gate drive loss.

Use Scenario: Main contactor replacement in 400 V battery pack service disconnect module.

IC Role / Device Role / Timing Role: Solid-state isolation switch controlling bidirectional current flow between battery and inverter.

Use Value: Avalanche rating (280 mJ) and 55 V V_DS ensure safe interruption of fault currents without arcing or weld failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	R_DS(on) = 1.8 mΩ @ 10 V (lower), but 60 V V_DS; TO263 package; no AEC-Q101 rating.	Higher efficiency at same current, but not qualified for automotive use; requires external avalanche protection.	Select when highest R_DS(on) priority outweighs qualification requirements and system-level ruggedness needs.
IRF1405ZPBF	R_DS(on) = 5.3 mΩ @ 10 V (lower), TO220 package; no logic-level gate (V_GS(th) = 2–4 V); no AEC-Q101 or dv/dt rating.	Better conduction loss, but requires 10 V gate drive and lacks automotive qualification and transient immunity.	Choose for cost-sensitive industrial applications where gate drive voltage ≥10 V is available and transient immunity is not critical.

Compared with STL220N6LF8AG and IRF1405ZPBF, SPB80N06S2L-11 uniquely balances automotive qualification, logic-level drive, and ruggedness-making it optimal for safety-critical, space-constrained, and thermally demanding applications where gate drive simplicity and fault tolerance are non-negotiable.

Availability

SPB80N06S2L-11 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, onboard chargers, and energy storage system battery disconnect applications requiring stable component supply and long-term lifecycle support.

Supply support for SPB80N06S2L-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ family-designed specifically for high-efficiency, high-reliability power conversion in automotive and industrial systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The SPB80N06S2L-11 has a maximum junction temperature (T_j) of +175 °C. At T_C = 100 °C, its continuous drain current drops to 58 A due to thermal derating-confirmed by the ID vs. TC curve on page 4 of the datasheet. This reflects real-world thermal limits when mounted on a PCB with specified cooling area.

Is SPB80N06S2L-11 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. With R_DS(on) ≤ 11 mΩ at V_GS = 10 V and Q_rr = 61–76 nC, it delivers lower conduction loss and faster reverse recovery than Schottky diodes in this voltage range. Its logic-level gate allows direct drive from standard controller outputs, simplifying layout and reducing BOM count.

Does SPB80N06S2L-11 have integrated ESD protection on the gate?

No. The datasheet does not specify integrated gate ESD protection. External gate resistors (typically 10–100 Ω) and TVS diodes are recommended per Infineon's application notes (e.g., AN2015-04) to prevent electrostatic damage during handling and PCB assembly.

How does the avalanche rating translate to real-world circuit protection?

The 280 mJ single-pulse avalanche energy rating means the device can safely absorb inductive energy from a 80 A current interrupted across 25 V with 25 Ω gate resistance-verified per JEDEC JESD24-1. This protects against flyback spikes in motor drives and relay coils without external snubbers, provided pulse duration and repetition rate stay within SOA limits.

SPB80N06S2L-11 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-11 FAQ

1.How can I place an order for SPB80N06S2L-11 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-11 reliable?

The price and inventory of SPB80N06S2L-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-11 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-11?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-11 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-11?

SPB80N06S2L-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-11 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-11?

For technical support, including SPB80N06S2L-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-11 requirements.

6.How does Aetrix verify that SPB80N06S2L-11 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-11 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-11?

All SPB80N06S2L-11 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-11, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-11 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-11:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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