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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-H5

Name: SPB80N06S2L-H5
Brand: Infineon Technologies
SKU: SPB80N06S2L-H5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-H5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-H5.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

SPB80N06S2L-H5 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5 mΩ R_DS(on) at V_GS = 4.5 V - optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the SPB80N06S2L-H5 datasheet, SPB80N06S2L-H5 pinout, SPB80N06S2L-H5 application, or SPB80N06S2L-H5 equivalent, key selection criteria include its 175 °C maximum junction temperature, 6 kV/µs dv/dt rating, integrated body diode with 76 ns reverse recovery time, and TO-263-3 surface-mount package thermal performance (R_thJC = 0.34 K/W typ).

Technical Context

This MOSFET employs Infineon's OptiMOS™ S2 silicon process, delivering low gate charge (Q_g = 145–190 nC) and fast switching (t_d(on) = 19–28 ns, t_f = 22–33 ns) while maintaining robust avalanche capability (E_AS = 700 mJ at T_j = 25 °C). Its threshold voltage (V_GS(th) = 1.2–2.0 V) enables reliable 4.5 V logic-level drive.

The device integrates a fast, low-V_SD body diode (V_SD = 0.9–1.3 V at I_F = 80 A) with controlled Q_rr (169–210 nC) and trr (76–95 ns), supporting synchronous rectification and hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15 % margin for transients
R_DS(on) @ V_GS = 4.5 V	5 mΩ max - enables <1 W conduction loss at 80 A in compact PCB layouts
I_D continuous @ T_C = 25 °C	80 A - rated for high-current output stages without forced air cooling
Q_g total	145–190 nC - determines gate driver power requirement and switching loss trade-off
E_AS single-pulse	700 mJ - withstands inductive turn-off energy in motor drives and solenoid controls
dv/dt rating	6 kV/µs - ensures immunity to parasitic turn-on in high-speed half-bridge configurations
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

SPB80N06S2L-H5 uses the P-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for low thermal resistance (R_thJC = 0.34 K/W typ). The three terminals are arranged in standard D²PAK layout: Drain (tab), Source (pin 1), Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to copper tab; must be soldered to large PCB copper area for thermal and current handling
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control and accurate shunt-based current monitoring
Gate (Pin 2)	Control electrode	High-impedance input requiring <20 V absolute max rating; sensitive to ESD and ringing

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V microcontroller-driven systems
Enhanced dv/dt ruggedness	6 kV/µs rating - prevents false triggering during fast voltage transitions in half-bridge and LLC resonant converters
Optimized body diode	trr = 76–95 ns, Q_rr = 169–210 nC - reduces switching losses and EMI in synchronous rectification and freewheeling paths
High-temperature reliability	Rated for continuous operation up to 175 °C junction - supports derating-free design in thermally constrained enclosures

Applications

Industrial Motor Drives

Server DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast commutation and avalanche energy absorption during PWM dead-time transitions.

Use Value: 5 mΩ R_DS(on) minimizes I²R losses at 40–60 A RMS, while 700 mJ E_AS handles inductive kickback without snubbers.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated buck-derived converters for AI accelerator racks.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 94 %.

Use Value: Low Q_g (145–190 nC) and fast tr/tf enable efficient operation at 300–500 kHz, reducing magnetics size and thermal load.

Automotive Body Control Modules

UPS Inverter Stages

Use Scenario: Load switch for high-current actuators (headlamp leveling, seat adjustment) in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: Single-ended power switch with integrated protection against load dump and reverse battery conditions.

Use Value: 175 °C T_j rating and 6 kV/µs dv/dt ensure robustness in under-hood environments with rapid ambient shifts and EMI exposure.

Use Scenario: Output H-bridge stage in online double-conversion UPS systems delivering clean 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched bridge leg with bidirectional current capability and controlled body diode recovery.

Use Value: Tight V_GS(th) distribution (1.2–2.0 V) ensures consistent turn-on timing across parallel devices, minimizing shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S2L-05	Same OptiMOS™ S2 die, identical R_DS(on) and Q_g, but TO-220 package (Ptot = 190 W, R_thJC = 0.5 K/W)	Limited to lower-power or forced-air-cooled designs due to higher thermal resistance	Select when through-hole assembly or mechanical mounting constraints preclude surface-mount packages
STL80N06LF6	6.5 mΩ R_DS(on) @ 4.5 V, 160 nC Q_g, 150 °C T_j max, PowerFLAT 5x6 package	Lower thermal performance (R_thJC ≈ 1.2 K/W) and reduced avalanche rating (E_AS = 320 mJ)	Choose for space-constrained consumer-grade applications where peak reliability and transient immunity are secondary to footprint

Compared with IPB80N06S2L-05 and STL80N06LF6, SPB80N06S2L-H5 delivers superior thermal dissipation via D²PAK packaging and highest avalanche robustness - making it preferred for industrial and automotive power stages demanding long-term reliability under repetitive stress.

Availability

SPB80N06S2L-H5 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and UPS inverter stages requiring stable component supply, full traceability, and extended lifecycle support.

Supply support for SPB80N06S2L-H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPB80N06S2L-H5 belongs to the OptiMOS™ S2 power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial and automotive power conversion systems operating up to 175 °C.

FAQ

What is the maximum allowable gate-source voltage for SPB80N06S2L-H5?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks irreversible gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤ ±15 V, especially during transient events or hot-plug conditions. The device's typical V_GS(th) of 1.6 V ensures full enhancement at 4.5 V, making it compatible with standard logic-level drivers without level-shifting.

Can SPB80N06S2L-H5 be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing when multiple units are paralleled. To ensure balanced dynamic behavior, match gate loop inductance and use individual gate resistors (≥ 5 Ω) per device. Thermal coupling via shared heatsink or copper plane is recommended to minimize thermal imbalance.

Does SPB80N06S2L-H5 require a gate resistor, and what value is recommended?

A gate resistor is mandatory to dampen ringing and limit peak gate current. For typical 12 V gate drive and 80 A load, a 5–10 Ω non-inductive resistor is recommended. Lower values (≤ 3 Ω) increase switching speed but raise EMI and gate driver stress; higher values (> 15 Ω) reduce EMI but increase switching losses. Layout-dependent parasitics may require empirical tuning between 3–12 Ω.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is characterized for continuous forward current up to 80 A at T_C = 25 °C and pulsed current up to 320 A. Its V_SD of 0.9–1.3 V and trr of 76–95 ns are specified across temperature, enabling reliable operation in synchronous buck and LLC topologies without external diode supplementation, provided thermal design accommodates diode conduction losses.

SPB80N06S2L-H5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-H5 FAQ

1.How can I place an order for SPB80N06S2L-H5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-H5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-H5 reliable?

The price and inventory of SPB80N06S2L-H5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-H5 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-H5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-H5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-H5?

SPB80N06S2L-H5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-H5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-H5?

For technical support, including SPB80N06S2L-H5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-H5 requirements.

6.How does Aetrix verify that SPB80N06S2L-H5 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-H5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-H5 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-H5?

All SPB80N06S2L-H5 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-H5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-H5 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-H5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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