Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SPB80N06SL2-7

Part No.:
SPB80N06SL2-7
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSPB80N06SL2-7.pdf
Description:
N-CHANNEL AUTOMOTIVE MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:600

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SPB80N06SL2-7 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in TO263-3 package, rated for 55 V VDS, 11 mΩ RDS(on) at VGS = 10 V, and 80 A continuous drain current at TC = 25 °C. It is AEC-Q101 qualified, avalanche-rated, and dv/dt-rated for automotive power switching applications including DC-DC converters and motor control.

For engineers reviewing the SPB80N06SL2-7 datasheet, SPB80N06SL2-7 pinout, SPB80N06SL2-7 application, or SPB80N06SL2-7 equivalent, key selection criteria include its 11 mΩ on-resistance at 10 V gate drive, 280 mJ single-pulse avalanche energy, 6 kV/µs dv/dt capability, and TO263 thermal performance with RthJC = 0.63 K/W.

Technical Context

This MOSFET employs Infineon's OptiMOS™ technology optimized for low conduction and switching losses in high-current 12 V automotive systems. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while its 80 A ID rating supports high-power load switching under thermally constrained conditions.

The device features a robust body diode with 80 A continuous forward current, 1.3 V VSD at 80 A, and 67 ns trr - enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers where fast recovery and low forward drop are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum blocking voltage compatible with 48 V nominal battery systems and transient clamping up to ISO 7637-2 Pulse 5a.
RDS(on) @ VGS = 10 V 11 mΩ max - Enables ≤ 70 W conduction loss at 80 A, supporting high-efficiency power stages in engine control units.
ID (continuous) 80 A @ TC = 25 °C - Sustains full-load current in compact heatsinked designs using TO263 footprint.
EAS 280 mJ - Withstands repetitive inductive switching surges in solenoid and relay drivers without derating.
dv/dt rating 6 kV/µs - Prevents spurious turn-on during fast voltage transients in noisy automotive environments.
Qg 80 nC max - Supports efficient 100 kHz+ PWM operation with moderate gate driver strength (e.g., 2 A peak).
Tj range −55 °C to +175 °C - Meets under-hood temperature requirements for transmission control modules and ADAS power supplies.

Pinout & Package

SPB80N06SL2-7 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for enhanced thermal dissipation. The package measures 10.0 × 15.9 × 4.4 mm and requires minimum 6 cm² copper area on FR4 PCB for specified RthJA = 40 K/W.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate) Control input (G) Logic-level compatible; drives fully at ≥4.5 V; gate plateau at ~3.6 V confirms stable Miller region transition.
Pin 3 (Drain) Power output (D) Exposed metal tab - electrically connected to drain; must be soldered to large copper pour for thermal and electrical integrity.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling - suitable for safety-critical ECU power stages.
Logic-level gate drive VGS(th) = 1.2–2.0 V ensures full enhancement with 3.3 V or 5 V MCU outputs, eliminating need for gate driver ICs in many applications.
Avalanche ruggedness 280 mJ single-pulse EAS allows safe operation in inductive load switching without external snubbers in starter relays and fuel pump controllers.
Low Ciss/Coss ratio Ciss = 2650 pF, Coss = 620 pF - improves hard-switching efficiency and reduces gate drive losses versus standard trench MOSFETs.
Fast reverse diode trr = 67 ns, Qrr = 76 nC - minimizes commutation loss and EMI in synchronous buck topologies used in ADAS camera power supplies.

Applications

Automotive Engine Control Unit (ECU) 48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current injector driver with inductive flyback suppression.

IC Role / Device Role / Timing Role: Low-side switch controlling 12 V fuel injector solenoids; handles 80 A peak pulsed current and 25 V flyback spikes.

Use Value: Avalanche rating absorbs inductive energy without external clamp; 11 mΩ RDS(on) limits junction temperature rise to <125 °C at 100% duty cycle.

Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200 kHz with forced-air cooling; leverages low Qg and fast body diode.

Use Value: 67 ns trr and 1.3 V VSD reduce reverse recovery loss by >40% vs. discrete Schottky solutions, improving conversion efficiency to >96%.

Electric Power Steering (EPS) Motor Driver Commercial Vehicle HVAC Blower Control

Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V EPS assist motor.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge; operates with 100 ns dead-time and 6 kV/µs dv/dt immunity.

Use Value: dv/dt rating prevents false turn-on during phase commutation; 175 °C Tjmax supports operation in sealed EPS housings with limited airflow.

Use Scenario: PWM-controlled blower fan in Class 8 truck cab HVAC system.

IC Role / Device Role / Timing Role: Low-side power switch modulating 24 V, 60 A resistive-inductive load at 25 kHz.

Use Value: 80 A ID rating enables full-speed operation without parallel devices; TO263 thermal resistance (0.63 K/W) maintains ΔT < 40 K above ambient at 75 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6LF8AG RDS(on) = 1.7 mΩ @ 10 V (lower), but 60 V VDS; TO263-7 package with Kelvin source; higher cost and larger footprint. Better suited for ultra-high-efficiency 48 V server PSUs requiring sub-2 mΩ conduction loss. Select when RDS(on) reduction >50% justifies added complexity and cost; not drop-in due to 7-pin layout and Kelvin sensing.
IRFB4115PBF RDS(on) = 14 mΩ @ 10 V (higher); TO220AB package; no AEC-Q101 qualification; lower EAS (190 mJ). Acceptable for industrial motor drives where automotive qualification and avalanche margin are non-critical. Choose only for cost-sensitive non-automotive applications; requires larger heatsink due to higher RthJA and conduction loss.

Compared with STL220N6LF8AG and IRFB4115PBF, SPB80N06SL2-7 delivers optimal balance of automotive qualification, thermal performance in TO263, and proven 280 mJ avalanche capability - making it the preferred choice for production-grade automotive power switches where reliability and supply chain continuity are mandatory.

Availability

SPB80N06SL2-7 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for SPB80N06SL2-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPB80N06SL2-7 belongs to the OptiMOS™ 2L family - engineered specifically for high-current, low-voltage automotive power switching where logic-level drive, avalanche robustness, and thermal efficiency are essential.

FAQ

Is SPB80N06SL2-7 pin-compatible with SPB80N06S2L-11?

Yes - SPB80N06SL2-7 is a valid ordering variant of the same die and package as SPB80N06S2L-11. Both share identical TO263-3 pinout, electrical specifications, and thermal characteristics per Infineon's 2004 datasheet revision. The "L2-7" suffix reflects tape-and-reel packaging and internal lot coding, not functional differentiation.

What is the maximum recommended gate resistor for 100 kHz PWM operation?

For 100 kHz switching with 80 nC total gate charge, a 10 Ω gate resistor limits peak current to ~1 A and provides adequate damping of ringing while keeping turn-on time below 150 ns. Lower values (≤5 Ω) are acceptable with 2 A capable drivers; higher values (>22 Ω) increase switching loss and require careful layout to avoid noise coupling.

Can SPB80N06SL2-7 replace IRF1404 in an existing 12 V motor controller?

Yes - SPB80N06SL2-7 offers lower RDS(on) (11 mΩ vs. 20 mΩ), higher ID (80 A vs. 162 A pulsed only), and AEC-Q101 qualification. However, its 55 V VDS is lower than IRF1404's 40 V rating, so verify that system transients remain within 50 V to maintain margin. Thermal design must account for TO263 vs. TO220 mounting differences.

Does the body diode support synchronous rectification in continuous conduction mode?

Yes - the body diode has 67 ns reverse recovery time and 76 nC Qrr, enabling reliable synchronous rectification up to 200 kHz in buck converters. For optimal performance, pair with a gate driver featuring adaptive dead-time control to minimize shoot-through risk during diode commutation.

SPB80N06SL2-7 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
210W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

SPB80N06SL2-7 FAQ

1.How can I place an order for SPB80N06SL2-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06SL2-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06SL2-7 reliable?

The price and inventory of SPB80N06SL2-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06SL2-7 is usually 5 days.

3.What payment methods are accepted for SPB80N06SL2-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06SL2-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06SL2-7?

SPB80N06SL2-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06SL2-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06SL2-7?

For technical support, including SPB80N06SL2-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06SL2-7 requirements.

6.How does Aetrix verify that SPB80N06SL2-7 is sourced from the original manufacturer or authorized distributors?

All SPB80N06SL2-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06SL2-7 meets industry standards.

7.What is the process for return or replacement of SPB80N06SL2-7?

All SPB80N06SL2-7 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06SL2-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06SL2-7 part is unused and in its original packaging.

Return procedure for SPB80N06SL2-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPB80N06SL2-7 Tags

  • SPB80N06SL2-7
  • SPB80N06SL2-7 PDF
  • SPB80N06SL2-7 Datasheet
  • SPB80N06SL2-7 Specifications
  • SPB80N06SL2-7 Images
  • Infineon Technologies
  • Infineon Technologies SPB80N06SL2-7
  • Buy SPB80N06SL2-7
  • SPB80N06SL2-7 Price
  • SPB80N06SL2-7 Distributor
  • SPB80N06SL2-7 Supplier
  • SPB80N06SL2-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER