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Infineon Technologies SPB80N08S2-07
- Part No.:
- SPB80N08S2-07
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N08S2-07.pdf
- Description:
- MOSFET N-CH 75V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,285
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Product details
Overview
SPB80N08S2-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 75 V VDS, 80 A continuous drain current at TC = 25°C, and 7.1 mΩ max RDS(on) at VGS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175°C maximum junction temperature - deployed in high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the SPB80N08S2-07 datasheet, SPB80N08S2-07 pinout, SPB80N08S2-07 application, or SPB80N08S2-07 equivalent, key selection criteria include RDS(on) vs. temperature stability, gate charge (Qg = 138–180 nC), reverse diode forward voltage (VSD = 0.9–1.3 V), and thermal resistance (RthJC = 0.3–0.5 K/W).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, medium-voltage applications. Its 75 V breakdown voltage supports 48 V bus systems with margin, while the 175°C Tjmax enables operation in thermally constrained environments such as automotive under-hood modules and industrial inverters.
The device integrates a robust body diode with trr = 110–140 ns and Qrr = 470–590 nC, enabling reliable synchronous rectification and hard-switched flyback topologies. Gate plateau voltage of 5.5 V ensures stable turn-on under varying drive conditions without unintended Miller-induced re-triggering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Withstands 48 V nominal bus with ≥50% safety margin for transient overvoltage in industrial power supplies. |
| RDS(on) max | 7.1 mΩ at VGS = 10 V, ID = 66 A - Enables ≤5.6 W conduction loss at 80 A, critical for thermal management in compact SMD designs. |
| Qg | 138–180 nC - Determines gate driver power requirement and switching speed; impacts EMI and efficiency trade-off in 100–500 kHz SMPS. |
| EAS | 810 mJ single-pulse avalanche energy - Supports unclamped inductive switching in motor control without external snubbers. |
| tr/tf | 34–52 ns rise / 33–50 ns fall time - Enables fast switching with low overlap loss, suitable for high-frequency ZVS/ZCS resonant converters. |
| VSD | 0.9–1.3 V at IF = 80 A - Low body diode forward drop reduces freewheeling loss in buck and half-bridge configurations. |
| RthJC | 0.3–0.5 K/W - Allows direct heatsink mounting to sustain 300 W Ptot at TC = 25°C in TO263-3 footprint. |
Pinout & Package
SPB80N08S2-07 uses the P-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives 10 V logic-level drive; input capacitance Ciss = 4610–6130 pF affects gate driver sizing and ringing risk. |
| Pin 2 (Drain) | Main current path output | Exposed copper tab - electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical performance. |
| Pin 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate loop; low-inductance layout essential to suppress VGS oscillation during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 810 mJ single-pulse EAS - eliminates need for external clamping in inductive load switching, reducing BOM count. |
| High dv/dt immunity | 6 kV/µs - prevents false turn-on during fast voltage transients in noisy motor drive or converter environments. |
| Extended temperature range | −55°C to +175°C operating range - qualified for under-hood automotive and industrial ambient conditions without derating. |
| Low RDS(on) × Qg figure-of-merit | ~1.0–1.3 Ω·nC - balances conduction and switching loss for optimal efficiency in 100–300 kHz power stages. |
| Optimized body diode | trr = 110–140 ns, Qrr = 470–590 nC - minimizes reverse recovery loss and associated EMI in synchronous rectification. |
Applications
| Motor Drive Half-Bridge | 48 V DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge for 48 V BLDC motor control in e-bikes and industrial actuators. IC Role / Device Role / Timing Role: High-side and low-side switching element; handles bidirectional 80 A peak current with <100 ns dead-time tolerance. Use Value: 7.1 mΩ RDS(on) limits conduction loss to <5 W per device at full load, enabling air-cooled design without forced airflow. |
Use Scenario: Primary-side switch in isolated 48 V–12 V/200 W LLC resonant converter for telecom and server PSUs. IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz; leverages low Qg and fast tr/tf for ZVS transition. Use Value: 138–180 nC Qg allows use of low-power gate drivers (e.g., 1EDN7512), reducing driver stage complexity and cost. |
| Automotive On-Board Charger (OBC) | Industrial UPS Inverter Stage |
|
Use Scenario: Bidirectional AC/DC and DC/DC switching in 6.6 kW OBC modules compliant with SAE J1772. IC Role / Device Role / Timing Role: Phase-leg switch in totem-pole PFC and isolated DC/DC stages; operates with 175°C junction limit under sustained load. Use Value: 175°C Tjmax and −55°C Tstg support full automotive temperature cycling without derating or thermal shutdown. |
Use Scenario: Output inverter stage in 3-phase 10 kVA industrial UPS delivering clean 230 VAC from 400 VDC bus. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverters; used in paralleled configuration for 200 A RMS output. Use Value: Avalanche rating (EAS = 810 mJ) absorbs inductive kickback during grid fault events, improving system reliability without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | RDS(on) = 3.3 mΩ @ 10 V but rated only for 40 V VDS; TO263-3 package; Qg = 120 nC. | Not suitable for 75 V bus systems; limited to 36 V nominal applications like 24 V industrial drives. | Select only when VDS stress remains ≤32 V and lower RDS(on) justifies reduced voltage margin. |
| IXFH80N075P3 | 75 V VDS, RDS(on) = 7.5 mΩ, Qg = 155 nC, TO247-3 package; higher RthJC = 0.65 K/W. | Requires through-hole mounting and larger heatsink; unsuitable for space-constrained SMD designs. | Prefer when board-level mechanical robustness outweighs SMD assembly benefits and thermal interface is less critical. |
Compared with STL220N4LF6AG and IXFH80N075P3, SPB80N08S2-07 uniquely balances 75 V rating, SMD TO263-3 form factor, and 7.1 mΩ RDS(on) - making it optimal for high-density 48 V power conversion where voltage margin, thermal resistance, and layout area are simultaneously constrained.
Availability
SPB80N08S2-07 is available at Aetrix Electronics and suitable for 48 V motor drives, automotive on-board chargers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for SPB80N08S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.
SPB80N08S2-07 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, medium-voltage switching in automotive electrification and industrial power conversion.
FAQ
What is the maximum continuous drain current at TC = 100°C?
At case temperature TC = 100°C, the maximum continuous drain current is derated to approximately 52 A, based on the ID vs. TC curve (Page 4, Figure 2) and thermal resistance RthJC = 0.5 K/W. This reflects safe operation within the 300 W power dissipation limit while maintaining Tj ≤ 175°C.
Is SPB80N08S2-07 suitable for synchronous rectification?
Yes - its integrated body diode has VSD = 0.9–1.3 V at 80 A and trr = 110–140 ns, enabling efficient synchronous rectification in buck, flyback, and LLC topologies. Gate drive timing must account for Qrr = 470–590 nC to avoid cross-conduction.
Does this MOSFET require gate resistors for stability?
Yes - a gate resistor of 2.2–10 Ω is recommended to dampen ringing caused by Lg × Ciss resonance and prevent parasitic turn-on. The datasheet specifies td(on)/td(off) test condition with RG = 2.2 Ω, confirming its use in validated switching waveforms.
Can SPB80N08S2-07 replace older OptiMOS devices like SPB80N06S2-07?
No - SPB80N06S2-07 is rated for 60 V VDS, while SPB80N08S2-07 is rated for 75 V. Although both share TO263-3 packaging and similar RDS(on), the higher breakdown voltage changes safe operating area boundaries and avalanche behavior; substitution requires full circuit revalidation.
SPB80N08S2-07 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6130 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N08S2-07 FAQ
1.How can I place an order for SPB80N08S2-07 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N08S2-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N08S2-07 reliable?
The price and inventory of SPB80N08S2-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N08S2-07 is usually 5 days.
3.What payment methods are accepted for SPB80N08S2-07?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N08S2-07 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N08S2-07?
SPB80N08S2-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N08S2-07 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N08S2-07?
For technical support, including SPB80N08S2-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N08S2-07 requirements.
6.How does Aetrix verify that SPB80N08S2-07 is sourced from the original manufacturer or authorized distributors?
All SPB80N08S2-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N08S2-07 meets industry standards.
7.What is the process for return or replacement of SPB80N08S2-07?
All SPB80N08S2-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N08S2-07, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N08S2-07 part is unused and in its original packaging.
Return procedure for SPB80N08S2-07:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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