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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N08S2L-07

Name: SPB80N08S2L-07
Brand: Infineon Technologies
SKU: SPB80N08S2L-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N08S2L-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N08S2L-07.pdf

Description:: MOSFET N-CH 75V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,325

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Product details

Overview

SPB80N08S2L-07 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO263-3 (D²PAK) package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.8 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and dv/dt ruggedness-designed for high-current DC-DC primary-side switching and motor drive half-bridge legs.

For engineers reviewing the SPB80N08S2L-07 datasheet, SPB80N08S2L-07 pinout, SPB80N08S2L-07 application, or SPB80N08S2L-07 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.3–0.5 K/W), and diode reverse recovery charge (Q_rr = 197–250 nC).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching and robust unclamped inductive switching (UIS) capability. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The MOSFET integrates a fast-recovery body diode with t_rr = 81–100 ns and Q_rr = 197–250 nC, supporting synchronous rectification and ZVS operation in resonant topologies. Thermal design is enabled by its low R_thJC and specified transient impedance curves up to 10 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V bus systems with 50 % safety margin
R_DS(on) @ V_GS = 10 V	6.8 mΩ max - Enables ≤ 43 W conduction loss at 80 A (T_C = 25 °C)
R_DS(on) @ V_GS = 4.5 V	8.7 mΩ max - Supports logic-level drive in 3.3 V/5 V control environments
E_AS	810 mJ - Withstands single inductive energy spikes up to 80 A × 25 V without failure
Q_g	233 nC max - Determines gate driver power requirement and switching speed trade-off
t_r/t_f	81/78 ns typ - Enables efficient operation at 100–500 kHz hard-switched SMPS
Q_rr	250 nC max - Limits diode recovery loss and EMI in bridge configurations

Pinout & Package

SPB80N08S2L-07 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal performance. The three terminals are arranged as Drain (pins 1 & 2, soldered to PCB copper area), Source (pin 3), and Gate (pin 1, isolated lead).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2)	Main current path collector / heat sink interface	Electrically and thermally connected to large copper pour; carries full load current and dissipates >90 % of heat
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring
Gate (Pin 1)	Control electrode for channel formation	Requires <10 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max)

Key Features

Feature	Design Value
Avalanche-rated (E_AS)	810 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
Logic-level gate drive	V_GS(th) = 1.2–2.0 V - Compatible with 3.3 V FPGA I/O and ARM Cortex-M GPIOs
High-temperature operation	T_jmax = 175 °C - Supports sealed enclosure designs without forced air cooling
dv/dt ruggedness	6 kV/µs - Prevents false turn-on during high-slew-rate commutation in motor drives
Low Q_gd/Q_g ratio	66/233 nC = 28 % - Improves Miller immunity and reduces switching loss sensitivity to layout parasitics

Applications

Motor Drive Half-Bridge

DC-DC Primary Switch

Use Scenario: 48 V BLDC motor inverter leg with 80 A peak phase current.

IC Role / Device Role / Timing Role: High-side N-channel switch in 3-phase inverter, driven by isolated gate driver with 100 ns dead-time.

Use Value: Low R_DS(on) and fast t_f reduce conduction + switching losses; avalanche rating handles back-EMF transients.

Use Scenario: 1 kW isolated forward converter operating at 200 kHz with 48 V input.

IC Role / Device Role / Timing Role: Primary-side main switch, synchronized to transformer reset via auxiliary winding feedback.

Use Value: 6.8 mΩ R_DS(on) minimizes conduction loss; low Q_rr suppresses diode reverse recovery noise.

Industrial Power Supply

EV Onboard Charger Stage

Use Scenario: 3 kW telecom rectifier PFC stage with interleaved boost topology.

IC Role / Device Role / Timing Role: Boost switch in high-current interleaved leg, thermally coupled to heatsink via D²PAK drain pad.

Use Value: R_thJC = 0.3 K/W enables 300 W dissipation at ΔT = 90 K; 175 °C rating supports derating for long life.

Use Scenario: 6.6 kW AC/DC OBC bidirectional stage operating in dual active bridge mode.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side full-bridge, driven with adaptive timing.

Use Value: Body diode Q_rr = 250 nC and t_rr = 100 ns allow precise ZVS window control and low EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 3.3 mΩ @ 10 V, but V_DS = 60 V only; TO263-3, 175 °C rated	Better conduction loss at ≤60 V bus, unsuitable for 75 V surge conditions	Select when system V_bus ≤60 V and R_DS(on) priority outweighs voltage margin
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V, TO220-3, no avalanche rating, R_thJC = 0.75 K/W	Higher thermal resistance limits power density; lacks UIS qualification for inductive loads	Prefer only in cost-sensitive, non-avalanche-critical 48 V supplies with ample heatsinking

Compared with STL220N6F7 and IRFB4115PBF, SPB80N08S2L-07 uniquely balances 75 V rating, 6.8 mΩ on-resistance, avalanche ruggedness, and D²PAK thermal performance-making it optimal for space-constrained industrial and automotive-grade 48 V systems requiring reliability under transient stress.

Availability

SPB80N08S2L-07 is available at Aetrix Electronics and suitable for industrial motor drives, high-power DC-DC converters, and onboard EV chargers requiring stable component supply across multi-year production cycles.

Supply support for SPB80N08S2L-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

SPB80N08S2L-07 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and transportation power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 50 A, as defined by the ID vs. TC derating curve on page 4 of the datasheet. This reflects thermal limitation-not electrical saturation-and assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow.

Does SPB80N08S2L-07 support gate drive from a 3.3 V microcontroller directly?

Yes-the device's V_GS(th) range (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V enable reliable turn-on with 3.3 V logic. However, full enhancement (≤6.8 mΩ) requires ≥10 V; for optimal efficiency, use a dedicated gate driver or charge pump.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.9–1.3 V and Q_rr = 197–250 nC at T_j = 25 °C. While higher forward drop than Schottky diodes, its monolithic integration eliminates bond-wire inductance and enables precise timing control in synchronous rectification-critical for ZVS operation.

Is SPB80N08S2L-07 suitable for automotive under-hood applications?

Yes-it is qualified per AEC-Q101 and rated for T_j = −55 to +175 °C. Its avalanche rating, dv/dt immunity, and robust package make it appropriate for 48 V mild-hybrid DC-DC converters and EPS motor drivers, provided board-level thermal design meets Infineon's FR4 PCB guidelines.

SPB80N08S2L-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 67A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 233 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N08S2L-07 FAQ

1.How can I place an order for SPB80N08S2L-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N08S2L-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N08S2L-07 reliable?

The price and inventory of SPB80N08S2L-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N08S2L-07 is usually 5 days.

3.What payment methods are accepted for SPB80N08S2L-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N08S2L-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N08S2L-07?

SPB80N08S2L-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N08S2L-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N08S2L-07?

For technical support, including SPB80N08S2L-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N08S2L-07 requirements.

6.How does Aetrix verify that SPB80N08S2L-07 is sourced from the original manufacturer or authorized distributors?

All SPB80N08S2L-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N08S2L-07 meets industry standards.

7.What is the process for return or replacement of SPB80N08S2L-07?

All SPB80N08S2L-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N08S2L-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N08S2L-07 part is unused and in its original packaging.

Return procedure for SPB80N08S2L-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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