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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N10L

Name: SPB80N10L
Brand: Infineon Technologies
SKU: SPB80N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N10L.pdf

Description:: MOSFET N-CH 100V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB80N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 14 mΩ R_DS(on) at V_GS = 10 V and I_D = 58 A, with 175 °C maximum junction temperature and avalanche-rated operation. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SPB80N10L datasheet, SPB80N10L pinout, SPB80N10L application, or SPB80N10L equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (≤24 mΩ), robust avalanche energy rating (E_AS = 700 mJ), and thermal resistance (R_thJC = 0.6 K/W).

Technical Context

This MOSFET employs trench-gate SIPMOS technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 6 kV/µs dv/dt rating supports stable operation under high-slew-rate conditions without spurious turn-on.

The device integrates an intrinsic body diode with 80 A continuous forward current capability and low V_SD (0.9–1.3 V), enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Its SOA curve supports DC, pulsed, and transient loads up to 100 V and 80 A within thermal limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	11–14 mΩ - Confirmed conduction loss at full gate drive; enables <1.2 W conduction loss at 58 A.
R_DS(on) @ V_GS = 4.5 V	15–24 mΩ - Verified logic-level performance; supports direct microcontroller drive without level-shifting.
I_D (continuous, T_C = 25 °C)	80 A - Rated drain current with heatsink; defines PCB copper area and thermal interface requirements.
E_AS	700 mJ - Single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V; enables unclamped inductive switching survival.
Q_g	160–240 nC - Total gate charge; determines driver strength requirement and switching loss trade-off.
R_thJC	0.6 K/W - Junction-to-case thermal resistance; sets minimum heatsink thermal resistance for 250 W P_tot.

Pinout & Package

SPB80N10L uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large metal tab on the backside.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts logic-level voltage (1.2–2.0 V threshold); requires low-impedance drive for fast switching.
Pin 2 (D)	Drain	Main high-side power terminal; internally bonded to exposed metal tab; must be soldered to ≥6 cm² copper pour for thermal management.
Pin 3 (S)	Source	Power return path and reference for gate drive; connects to ground or low-side switch node in half-bridge configurations.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interfacing with 3.3 V/5 V MCUs and gate drivers without level shifters.
Avalanche-rated operation	700 mJ single-pulse E_AS allows safe operation during inductive load switching transients without external snubbers.
High-temperature capability	175 °C max T_j and stable R_DS(on) up to 150 °C support compact, sealed, or high-ambient designs.
dv/dt ruggedness	6 kV/µs rated dv/dt prevents false turn-on in noisy high-voltage switching environments like motor inverters.
Low-output capacitance	C_oss = 640–800 pF reduces switching losses in high-frequency SMPS applications above 100 kHz.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 80 A peak phase current with 100 V bus clamping.

Use Value: Low R_DS(on) at 4.5 V reduces conduction loss by >30% vs. standard MOSFETs, improving efficiency at partial load.

Use Scenario: Primary-side switch in isolated 48 V → 12 V flyback or active-clamp forward converter.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz; withstands reflected output voltage spikes.

Use Value: Avalanche rating eliminates need for external RCD clamp, simplifying BOM and layout while maintaining reliability.

UPS Output Stage

Solar Charge Controller

Use Scenario: Bidirectional switching in online UPS output inverter stage handling 1–3 kVA loads.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM switch in full-bridge topology; conducts reverse current during regeneration.

Use Value: Body diode V_SD ≤ 1.3 V and Q_rr = 330–500 nC minimize reverse recovery loss and EMI during zero-voltage switching transitions.

Use Scenario: MPPT buck switch in 100 V PV string-connected solar charge controller for telecom base stations.

IC Role / Device Role / Timing Role: High-side main switch managing up to 80 A input current from photovoltaic array.

Use Value: 175 °C T_jmax and stable R_DS(on) over temperature ensure consistent MPPT efficiency across desert ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 14 mΩ @ 10 V but V_GS(th) = 2.0–4.0 V; no avalanche rating specified.	Requires higher gate drive voltage; unsuitable for unclamped inductive switching.	Prefer SPB80N10L where avalanche ruggedness or 3.3 V logic drive is required.
IRF540N	R_DS(on) = 44 mΩ @ 10 V; V_GS(th) = 2.0–4.0 V; T_jmax = 175 °C; no E_AS spec.	Higher conduction loss and no avalanche rating limit use in high-reliability industrial power stages.	SPB80N10L offers 3× lower R_DS(on) and guaranteed avalanche capability for mission-critical designs.

Compared with STP80NF10 and IRF540N, SPB80N10L delivers superior logic-level drive margin, certified avalanche energy, and lower thermal resistance-making it optimal for space-constrained, high-efficiency, and high-reliability 48 V power systems.

Availability

SPB80N10L is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar charge controllers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPB80N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB80N10L belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial power conversion and motor control applications.

FAQ

What is the maximum gate-source voltage for SPB80N10L?

The absolute maximum V_GS is ±20 V per datasheet. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 0 to 10 V for optimal R_DS(on) and reliability; 12 V is acceptable with series gate resistor to limit peak current during switching.

Does SPB80N10L have a built-in body diode, and what are its characteristics?

Yes, SPB80N10L includes an integrated anti-parallel body diode rated for 80 A continuous forward current at T_C = 25 °C and 320 A pulsed. Its forward voltage is 0.9–1.3 V at I_F = 80 A, and reverse recovery charge is 330–500 nC, supporting efficient synchronous rectification and freewheeling.

Can SPB80N10L be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables stable current sharing when paralleled. Designers must match gate drive impedance, layout symmetry, and thermal coupling; derating to 70–75% of total rated current per device is recommended for reliability.

What is the thermal resistance from junction to case (R_thJC) and how should it be applied in heatsink design?

R_thJC is 0.6 K/W maximum. To maintain T_j ≤ 150 °C at 250 W dissipation, the combined thermal resistance from case to ambient (including interface material and heatsink) must be ≤ (150 − 70)/250 = 0.32 K/W. This requires a high-performance heatsink with low thermal mass and direct mounting to the exposed drain pad.

SPB80N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N10L FAQ

1.How can I place an order for SPB80N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N10L reliable?

The price and inventory of SPB80N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N10L is usually 5 days.

3.What payment methods are accepted for SPB80N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N10L?

SPB80N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N10L?

For technical support, including SPB80N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N10L requirements.

6.How does Aetrix verify that SPB80N10L is sourced from the original manufacturer or authorized distributors?

All SPB80N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N10L meets industry standards.

7.What is the process for return or replacement of SPB80N10L?

All SPB80N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N10L part is unused and in its original packaging.

Return procedure for SPB80N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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