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Infineon Technologies SPB80N10L G
- Part No.:
- SPB80N10L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N10L G.pdf
- Description:
- MOSFET N-CH 100V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,186
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Product details
Overview
SPB80N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V VDS, 14 mΩ RDS(on) at VGS = 10 V and ID = 58 A, with 175 °C maximum junction temperature and avalanche-rated operation. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the SPB80N10L datasheet, SPB80N10L pinout, SPB80N10L application, or SPB80N10L equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), low RDS(on) at 4.5 V (≤24 mΩ), 700 mJ single-pulse avalanche energy, and TO263-3 thermal performance (RthJC = 0.6 K/W).
Technical Context
This device implements a planar SIPMOS™ structure optimized for low conduction loss and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V/5 V logic controllers, while the 6 kV/µs dv/dt rating supports noise-immune operation in fast-switching topologies.
The MOSFET features integrated body diode with 95–140 ns reverse recovery time and 330–500 nC Qrr, enabling use in synchronous rectification and freewheeling applications without external diode supplementation. Thermal design is supported by a low junction-to-case resistance of 0.6 K/W and defined PCB cooling requirements (6 cm² copper area).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V bus and 100 V industrial input stage designs |
| RDS(on) @ VGS = 10 V | 11–14 mΩ - Enables ≤1.1 W conduction loss at 80 A continuous drain current |
| ID (TC = 25 °C) | 80 A - Supports high-current half-bridge and H-bridge motor phase legs |
| EAS | 700 mJ - Withstands single-pulse inductive energy up to 25 V × 80 A × 3.5 ms |
| Qg | 160–240 nC - Determines gate driver current requirement (~2 A peak for 100 ns rise time) |
| Tj(max) | 175 °C - Allows operation in sealed enclosures or high-ambient industrial environments |
| dv/dt rating | 6 kV/µs - Ensures immunity to parasitic turn-on in hard-switched SMPS and inverters |
Pinout & Package
SPB80N10L uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large metal tab on the underside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives logic-level voltage (≥4.5 V) to fully enhance channel; requires <100 nA leakage current handling |
| Drain (D) | High-side power terminal | Connected to PCB copper pour for heat dissipation; carries full load current and withstands 100 V transients |
| Source (S) | Reference node / return path | Serves as local ground reference for gate drive; must be low-inductance to avoid shoot-through during switching |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.2–2.0 V enables direct interface with 3.3 V microcontrollers and FPGA I/O without level-shifting |
| Avalanche-rated operation | 700 mJ EAS allows safe operation under inductive switching stress without external snubbers |
| Low RDS(on) at 4.5 V | ≤24 mΩ ensures <1.5 W conduction loss at 58 A, reducing heatsink size in space-constrained designs |
| Robust dv/dt immunity | 6 kV/µs rating prevents false turn-on in high-di/dt motor control and SMPS applications |
| Integrated body diode | Qrr = 330–500 nC and trr = 95–140 ns support efficient synchronous rectification in buck converters |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
|
Use Scenario: High-current half-bridge leg in 24–48 V BLDC motor controllers for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: Main switching device in low-side configuration; handles 80 A peak phase current with <100 ns switching transitions. Use Value: Low RDS(on) reduces conduction losses by >30% vs. comparable 20 mΩ MOSFETs, improving system efficiency at 10–50 kHz PWM frequencies. |
Use Scenario: Primary-side switch in isolated 400 W flyback or forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor operating at 65–100 kHz with 100 V breakdown margin. Use Value: 700 mJ avalanche energy eliminates need for clamping circuits, simplifying layout and improving reliability under output short-circuit conditions. |
| Uninterruptible Power Supplies | Automotive DC Load Switches |
|
Use Scenario: Inverter-stage switch in 1 kVA online UPS battery backup systems with 48 V DC input. IC Role / Device Role / Timing Role: Bidirectional switching element in H-bridge topology; conducts 80 A continuous with forced-air cooling. Use Value: 175 °C Tj(max) and 0.6 K/W RthJC enable stable operation under sustained overload and ambient temperatures up to 70 °C. |
Use Scenario: High-side load switch for 12 V/24 V automotive body control modules (BCM) managing headlights or HVAC fans. IC Role / Device Role / Timing Role: Logic-level controlled power switch with integrated reverse polarity protection via body diode orientation. Use Value: VGS(th) ≤ 2.0 V ensures full enhancement from automotive MCU GPIOs, eliminating external gate drivers and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF10 | RDS(on) = 14 mΩ @ 10 V, but VGS(th) = 2.0–4.0 V; higher gate charge (Qg = 220 nC) | Requires higher gate drive voltage; less suitable for 3.3 V logic interfaces | Prefer when gate drive is ≥5 V and lower Qgd/Qg ratio is needed for ZVS operation |
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V; VGS(th) = 2.0–4.0 V; no avalanche rating specified | Limited to ≤30 A continuous; unsuitable for 80 A thermal design targets | Select only for cost-sensitive, low-power (<200 W) applications where 100 V rating suffices but avalanche robustness is not required |
Compared with STP80NF10 and IRF540NPBF, SPB80N10L delivers superior logic-level compatibility, higher current capability, and guaranteed avalanche ruggedness-making it optimal for industrial motor control and high-reliability DC-DC conversion where gate drive simplicity and UIS immunity are critical.
Availability
SPB80N10L is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and automotive DC load switches requiring stable component supply and long-term production continuity.
Supply support for SPB80N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
SPB80N10L belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial automation, renewable energy inverters, and automotive electrification systems.
FAQ
Is SPB80N10L suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed RDS(on) ≤24 mΩ at VGS = 4.5 V, SPB80N10L fully enhances using standard 3.3 V GPIO outputs. No level shifter is required, though a 1–2 Ω series gate resistor is recommended to dampen ringing.
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies ID = 58 A at TC = 100 °C. This value is derived from thermal derating curves and assumes proper PCB copper area (6 cm²) and vertical mounting without forced air. Exceeding this current risks exceeding Tj(max) = 175 °C.
Does SPB80N10L have a qualified avalanche rating?
Yes. SPB80N10L is explicitly rated for unclamped inductive switching with EAS = 700 mJ (ID = 80 A, VDD = 25 V, RGS = 25 Ω). This rating is production-tested per JEDEC JESD24-11 and applies across the full temperature range (−55 °C to +175 °C).
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 0.9–1.3 V at 80 A and trr = 95–140 ns. While slower and higher-VF than Schottky diodes, its co-packaged integration eliminates layout parasitics and enables predictable synchronous rectification in buck converters up to 200 kHz without external diode placement constraints.
SPB80N10L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4540 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N10L G FAQ
1.How can I place an order for SPB80N10L G through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N10L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N10L G reliable?
The price and inventory of SPB80N10L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N10L G is usually 5 days.
3.What payment methods are accepted for SPB80N10L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N10L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N10L G?
SPB80N10L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N10L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N10L G?
For technical support, including SPB80N10L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N10L G requirements.
6.How does Aetrix verify that SPB80N10L G is sourced from the original manufacturer or authorized distributors?
All SPB80N10L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N10L G meets industry standards.
7.What is the process for return or replacement of SPB80N10L G?
All SPB80N10L G units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N10L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N10L G part is unused and in its original packaging.
Return procedure for SPB80N10L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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