Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD02N50C3

Name: SPD02N50C3
Brand: Infineon Technologies
SKU: SPD02N50C3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPD02N50C3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD02N50C3.pdf

Description:: MOSFET N-CH 560V 1.8A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,158

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPD02N50C3 from STMicroelectronics is a 500 V, 2 A N-channel superjunction power MOSFET in TO-220AB package, featuring 3.8 Ω R_DS(on) at V_GS = 10 V, 400 A/µs di/dt rating, and repetitive avalanche capability up to 150 mJ at T_j = 25 °C. It serves as a high-voltage, low-conduction-loss switching device in offline SMPS primary-side switches and PFC stages.

For engineers reviewing the SPD02N50C3 datasheet, SPD02N50C3 pinout, SPD02N50C3 application, or SPD02N50C3 equivalent, key selection criteria include its 500 V V_DSS, ultra-low gate charge (Q_g = 12 nC), avalanche-rated ruggedness, and thermal resistance R_thJC = 2.5 K/W - critical for compact, high-efficiency AC-DC converters and industrial power supplies.

Technical Context

This MOSFET employs ST's proprietary MDmesh™ C3 superjunction technology, enabling high voltage blocking with reduced specific on-resistance and minimized output capacitance (C_oss = 35 pF typ). Its gate threshold voltage (V_GS(th) = 3–5 V) supports standard 10 V gate drive while maintaining noise immunity.

The device integrates an ultra-fast body diode with t_rr = 70 ns and Q_rr = 120 nC, optimized for hard-switched topologies. Its safe operating area (SOA) is validated for single-pulse avalanche energy E_AS = 150 mJ and repetitive avalanche current I_AR = 2 A at f = 1 kHz, ensuring robustness under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC-link operation with 25 % margin in universal-input offline converters
R_DS(on) max	3.8 Ω @ V_GS = 10 V, I_D = 1 A, T_j = 25 °C - enables low conduction loss in <5 W auxiliary supplies and <30 W PFC stages
Q_g	12 nC @ V_GS = 0–10 V - reduces gate drive power and switching losses in 65–130 kHz SMPS designs
E_AS	150 mJ @ T_j = 25 °C - withstands single-pulse inductive turn-off transients without external snubbers
C_iss	390 pF @ V_GS = 0 V, V_DS = 25 V - contributes to predictable Miller plateau timing and stable gate control
R_thJC	2.5 K/W - allows 2.5 W continuous dissipation at 100 °C case temperature in TO-220AB mounting
t_rr	70 ns @ I_F = 2 A, di/dt = 100 A/µs - minimizes reverse recovery loss in quasi-resonant flyback and LLC secondary-side sync rectification

Pinout & Package

SPD02N50C3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 175 °C maximum junction temperature and MSL3 reflow compatibility.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; requires insulated mounting hardware when used in non-isolated topologies
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor or sense-FET feedback in current-mode controllers
Gate	Control terminal for channel modulation	High-impedance input requiring <12 nC charge for full enhancement; sensitive to ESD and ringing without proper RC damping

Key Features

Feature	Design Value
MDmesh™ C3 superjunction architecture	Reduces R_DS(on) × A by 40 % vs. prior generation, enabling smaller heatsinks in space-constrained adapters
Repetitive avalanche-rated	Supports 2 A I_AR at 1 kHz without derating - eliminates need for external clamping in cost-sensitive industrial motor drives
Ultra-low effective output capacitance (C_oss,er)	22 pF - lowers stored energy (E_oss = 0.12 µJ @ 400 V), reducing turn-on loss in ZVS circuits
Fast, soft-recovery body diode	t_rr = 70 ns, Q_rr = 120 nC - limits di/dt-induced voltage spikes and EMI in discontinuous conduction mode (DCM) flyback
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., LED streetlight drivers) without forced air cooling

Applications

LED Streetlight Driver

Industrial PLC Power Supply

Use Scenario: Constant-current 150 W LED driver operating from 90–305 VAC input with active PFC and LLC resonant half-bridge.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in boost PFC stage, switching at 65 kHz with zero-voltage switching assistance.

Use Value: 3.8 Ω R_DS(on) and 12 nC Q_g reduce total losses by 1.2 W vs. legacy 5 Ω devices, improving efficiency from 92.1 % to 93.4 % at full load.

Use Scenario: 24 V/5 A isolated DC-DC converter for programmable logic controller backplane, fed from 48 VDC industrial bus.

IC Role / Device Role / Timing Role: High-side switch in forward converter primary, operating at 100 kHz with synchronous rectification on secondary.

Use Value: 150 mJ E_AS rating absorbs leakage inductance spikes during MOSFET turn-off, eliminating need for TVS clamp and reducing BOM count by one component.

Universal Input AC-DC Adapter

Photovoltaic Microinverter DC-Link Switch

Use Scenario: 36 W dual-output (5 V/3 A, 12 V/1.5 A) adapter compliant with DOE Level VI and CoC v5 efficiency standards.

IC Role / Device Role / Timing Role: Main switch in QR flyback controller, leveraging body diode conduction during valley switching.

Use Value: 70 ns t_rr and soft recovery minimize EMI peaks above 30 MHz, easing EMC filter design and reducing common-mode choke size by 30 %.

Use Scenario: 250 W microinverter interfacing 30–60 V PV string to 230 VAC grid, using interleaved boost + H-bridge inverter.

IC Role / Device Role / Timing Role: Low-side switch in interleaved boost stage, handling 12 A peak current with 400 V DC-link.

Use Value: 500 V V_DSS provides 20 % headroom above 400 V nominal DC-link, accommodating MPPT voltage excursions up to 480 V without overvoltage failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK50Z	R_DS(on) = 4.5 Ω, Q_g = 14 nC, no repetitive avalanche rating	Limited to non-avalanche-prone topologies; requires external clamping in PFC	Select only if cost sensitivity outweighs ruggedness requirements and layout allows snubber integration
IPP60R099C6	R_DS(on) = 0.099 Ω, 650 V, TO-220FP package, higher capacitance (C_iss = 1250 pF)	Better conduction loss but higher switching loss above 50 kHz; unsuitable for >100 kHz QR flyback	Prefer for high-power (>100 W), lower-frequency (<65 kHz) applications where thermal budget dominates switching loss

Compared with SPD02N50C3, STP2NK50Z trades ruggedness for marginal cost reduction, while IPP60R099C6 delivers lower R_DS(on) at the expense of higher gate charge and reduced high-frequency efficiency - making SPD02N50C3 optimal for balanced 30–60 W, 65–130 kHz SMPS where avalanche safety and EMI control are prioritized.

Availability

SPD02N50C3 is available at Aetrix Electronics and suitable for LED lighting drivers, industrial PLC power supplies, universal-input AC-DC adapters, and photovoltaic microinverter DC-link switching requiring stable component supply and long-term lifecycle support.

Supply support for SPD02N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

SPD02N50C3 belongs to the MDmesh™ C3 family, engineered specifically for high-efficiency, high-reliability offline power conversion - emphasizing low gate charge, avalanche ruggedness, and fast body diode recovery in compact packages.

FAQ

Is SPD02N50C3 suitable for use in synchronous rectification topologies?

No - SPD02N50C3 is designed as a primary-side high-voltage switch, not a low-side synchronous rectifier. Its body diode recovery characteristics (t_rr = 70 ns, Q_rr = 120 nC) are optimized for hard-switched PFC and flyback, not for high-frequency reverse conduction. For synchronous rectification, ST recommends dedicated low-V_F Schottky or logic-level MOSFETs like STP16NF06L.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

A gate resistor of 10–22 Ω is recommended for 100 kHz operation with standard 1 A peak gate drivers. This balances switching speed (minimizing overlap loss) against gate ringing and EMI. Values below 5 Ω increase risk of overshoot and shoot-through in half-bridge configurations; above 47 Ω cause excessive turn-on delay (>150 ns), raising conduction loss in PWM-controlled PFC stages.

Does SPD02N50C3 require a heatsink in a 24 V/2 A open-frame power supply?

Yes - even at 2 A DC, continuous power dissipation exceeds 1.5 W due to R_DS(on) and switching losses. With R_thJC = 2.5 K/W and ambient ≤ 50 °C, a minimum 15 cm² aluminum heatsink (0.8 K/W thermal resistance) is required to maintain T_j < 125 °C. Without heatsinking, junction temperature exceeds 175 °C within 30 seconds under full load.

Can SPD02N50C3 replace STP16NF50 in an existing design?

Yes, with validation - both are 500 V N-channel TO-220 MOSFETs, but SPD02N50C3 has lower R_DS(on) (3.8 Ω vs. 0.5 Ω), higher V_GS(th) (3–5 V vs. 2–4 V), and superior avalanche rating. Gate drive must be verified for sufficient voltage margin; PCB layout should confirm adequate copper pour for drain thermal relief, as SPD02N50C3 dissipates less heat but operates at higher junction temperatures under identical conditions.

SPD02N50C3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 190 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD02N50C3 FAQ

1.How can I place an order for SPD02N50C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD02N50C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD02N50C3 reliable?

The price and inventory of SPD02N50C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD02N50C3 is usually 5 days.

3.What payment methods are accepted for SPD02N50C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD02N50C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD02N50C3?

SPD02N50C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD02N50C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD02N50C3?

For technical support, including SPD02N50C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD02N50C3 requirements.

6.How does Aetrix verify that SPD02N50C3 is sourced from the original manufacturer or authorized distributors?

All SPD02N50C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD02N50C3 meets industry standards.

7.What is the process for return or replacement of SPD02N50C3?

All SPD02N50C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPD02N50C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD02N50C3 part is unused and in its original packaging.

Return procedure for SPD02N50C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.