Infineon Technologies SPD02N60C3BTMA1

Overview

SPD02N60C3BTMA1 from Infineon Technologies is a 600 V, 2.3 A N-channel enhancement-mode power MOSFET in TO-252 (DPAK) package, featuring R_DS(on) = 3.8 Ω @ V_GS = 10 V, ultra-low gate charge (Q_g = 9.5 nC), and avalanche-rated operation. It serves as a high-voltage switching element in offline SMPS, LED drivers, and industrial AC-DC converters.

For engineers reviewing the SPD02N60C3BTMA1 datasheet, SPD02N60C3BTMA1 pinout, SPD02N60C3BTMA1 application, or SPD02N60C3BTMA1 equivalent, key selection criteria include its 600 V V_DSS, 3.8 Ω R_DS(on), 9.5 nC total gate charge, 15 V/ns dv/dt ruggedness, and TO-252 thermal performance under continuous conduction mode.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering optimized trade-offs between conduction loss (via low R_DS(on)) and switching loss (via reduced Q_g, C_iss = 240 pF, and C_oss = 30 pF). Its periodic avalanche rating supports robust operation in inductive switching circuits without external snubbers.

The device is specified for T_j ≤ 150 °C, with R_thJC = 3.5 K/W and R_thJA = 60 K/W on standard FR-4 PCB (1 cm² copper area). Gate threshold voltage V_GS(th) = 2.5–4.5 V ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

Key Specifications

Pinout & Package

SPD02N60C3BTMA1 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal enhancement. The package supports reflow soldering (MSL3) and delivers R_thJC = 3.5 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STP2NK60ZFP and FQP2N60, SPD02N60C3BTMA1 offers superior avalanche ruggedness, lower gate charge, and better thermal resistance-making it preferred for compact, high-reliability 60–100 kHz offline converters where transient immunity and efficiency are prioritized.

Availability

SPD02N60C3BTMA1 is available at Aetrix Electronics and suitable for offline AC-DC converters, LED drivers, and industrial solenoid controllers requiring stable component supply and long-term lifecycle support.

Supply support for SPD02N60C3BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C3 family, designed specifically for high-efficiency, high-voltage SMPS in consumer, industrial, and lighting applications where low gate charge and avalanche capability are essential.

FAQ

Is SPD02N60C3BTMA1 suitable for use in a 100 kHz flyback converter?

Yes. With Q_g = 9.5 nC, C_iss = 240 pF, and E_off = 120 µJ at 400 V/2 A, SPD02N60C3BTMA1 supports efficient 100 kHz operation in DCM flyback topologies. Its low R_DS(on) and thermal resistance enable stable performance without forced air cooling.

Does SPD02N60C3BTMA1 have an integrated body diode?

Yes. It features a monolithic N-channel MOSFET with an inherent parasitic body diode rated for I_S = 2.3 A continuous and I_SM = 6.5 A pulsed. Reverse recovery parameters are t_rr = 45 ns and Q_rr = 22 nC at T_j = 25 °C, enabling use in synchronous rectification or inductive load driving.

What is the maximum junction temperature and how is it enforced?

The absolute maximum junction temperature is T_j(max) = 150 °C. This limit is enforced via thermal design: R_thJC = 3.5 K/W requires case temperature ≤100 °C at 1.8 W dissipation. PCB layout must provide ≥1 cm² copper area under the exposed drain pad per Infineon's mounting guidelines.

Can SPD02N60C3BTMA1 replace older CoolMOS™ C2 devices?

Yes, with design verification. SPD02N60C3BTMA1 offers lower Q_g (−25%) and improved dv/dt immunity (15 V/ns vs. 12 V/ns typical for C2), but gate threshold remains compatible (2.5–4.5 V). Layout and gate drive strength should be reviewed to exploit reduced switching losses without over-stressing the driver.