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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD04N60C3

Name: SPD04N60C3
Brand: Infineon Technologies
SKU: SPD04N60C3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD04N60C3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD04N60C3.pdf

Description:: MOSFET N-CH 600V 4.5A TO252-3

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Product details

Overview

SPD04N60C3 from Infineon Technologies is a 600 V, 4 A N-channel enhancement-mode power MOSFET in TO-252 (DPAK) package, featuring R_DS(on) = 1.4 Ω (typ @ V_GS = 10 V, T_j = 25 °C), ultra-low gate charge (Q_G = 12 nC), and avalanche-rated operation. It serves as a high-voltage, high-efficiency switching element in offline SMPS, PFC stages, and motor drive half-bridges.

For engineers reviewing the SPD04N60C3 datasheet, SPD04N60C3 pinout, SPD04N60C3 application, or SPD04N60C3 equivalent, key selection criteria include its 600 V V_DSS, 1.4 Ω R_DS(on), 12 nC total gate charge, 15 V/ns dv/dt ruggedness, and TO-252 thermal performance under continuous 4 A drain current at T_C = 100 °C.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering improved transconductance (g_fs = 4.5 S typ) and reduced switching losses via optimized charge distribution. Its periodic avalanche rating (E_AS = 315 mJ @ V_DD = 400 V) supports robust operation in inductive switching circuits without external snubbers.

The device exhibits low reverse recovery charge (Q_rr = 120 nC) and fast body diode recovery (t_rr = 120 ns), enabling efficient synchronous rectification and ZVS/ZCS topologies. Its 15 V/ns dv/dt immunity and 400 A/µs di/dt capability ensure reliable commutation in hard-switched converters with high dV/dt stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V in 85–265 VAC offline applications with margin.
I_D (T_C = 100 °C)	4 A - Continuous conduction capability for 30–60 W SMPS primary-side switches or auxiliary PFC stages.
R_DS(on) (V_GS = 10 V)	1.4 Ω (typ) - Enables <1.5 W conduction loss at 4 A, reducing heatsink requirements in compact designs.
Q_G	12 nC - Low gate drive energy supports high-frequency operation (>100 kHz) with minimal driver IC loading.
E_AS	315 mJ - Avalanche energy rating allows safe single-pulse inductive turn-off without clamping circuitry.
dv/dt immunity	15 V/ns - Resists false triggering during fast voltage transients in bridge-leg configurations.
t_r/t_f	15/25 ns - Fast switching transitions reduce overlap losses and EMI generation in hard-switched topologies.

Pinout & Package

SPD04N60C3 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for enhanced thermal dissipation. The package meets JEDEC MS-012 standards and supports reflow soldering (MSL1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Internally connected to copper tab; requires direct PCB copper pour for thermal management and low-inductance layout.
Gate (G)	Control electrode	High-impedance input requiring <12 nC charge; sensitive to ESD-must be protected with RC snubber or gate resistor.
Source (S)	Reference node for gate drive and current sensing	Common return path for load current; must be low-inductance connection to minimize ringing and shoot-through risk.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_G = 12 nC enables efficient 100–300 kHz switching with standard gate drivers (e.g., 1EDN7512B).
Avalanche-rated operation	Single-pulse E_AS = 315 mJ eliminates need for external RCD clamp in flyback or LLC resonant converters.
Improved transconductance	g_fs = 4.5 S reduces gate-to-drain Miller feedback, improving noise immunity in high-dV/dt environments.
Low reverse recovery charge	Q_rr = 120 nC minimizes body-diode conduction loss during dead-time in half-bridge inverters.

Applications

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 36–65 W universal-input adapters with active PFC and QR flyback secondary.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in PFC boost stage and main flyback switch.

Use Value: 1.4 Ω R_DS(on) and 12 nC Q_G enable >90% efficiency at full load while maintaining thermal headroom on 2-layer FR4 PCBs.

Use Scenario: 100–500 W three-phase BLDC drives with discrete half-bridge modules.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET half-bridge legs for gate drive and current sensing isolation.

Use Value: 15 V/ns dv/dt immunity prevents spurious turn-on during high-speed IGBT switching, eliminating need for negative gate bias.

Solar Microinverters

LED Driver Power Stages

Use Scenario: 250–300 W single-phase microinverter with two-stage conversion (boost + H-bridge inverter).

IC Role / Device Role / Timing Role: High-voltage switch in DC-DC boost stage interfacing PV panel to 400 V DC link.

Use Value: 600 V V_DSS and 315 mJ E_AS tolerate PV open-circuit voltage surges and lightning-induced transients without derating.

Use Scenario: Constant-current LED drivers for street lighting (100–200 W) using buck-boost topology.

IC Role / Device Role / Timing Role: Main switching transistor regulating output current via PWM dimming control.

Use Value: Fast t_r/t_f (15/25 ns) and low Q_rr suppress audible coil whine and reduce EMI filter size in Class B conducted emissions compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	R_DS(on) = 1.6 Ω (higher), Q_G = 14 nC (higher), no specified E_AS rating	Lacks avalanche rating; requires external clamping in inductive loads	Prefer SPD04N60C3 where unclamped inductive switching occurs (e.g., relay drivers, solenoid controls)
IPP60R190C6	650 V rating, R_DS(on) = 0.19 Ω (lower), Q_G = 22 nC (higher), TO-220FP package	Higher conduction efficiency but larger footprint and higher gate drive demand	Choose SPD04N60C3 for space-constrained DPAK layouts needing balanced switching/conduction trade-off

Compared with STP4NK60ZFP and IPP60R190C6, SPD04N60C3 delivers optimal balance of avalanche ruggedness, gate drive simplicity, and thermal performance in TO-252-making it ideal for cost-sensitive, medium-power industrial SMPS where reliability under transient stress is critical.

Availability

SPD04N60C3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, solar microinverter boost stages, and industrial motor drive half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for SPD04N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPD04N60C3 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-reliability switching in 600 V offline power supplies and motor control systems.

FAQ

What is the maximum continuous drain current for SPD04N60C3 at T_C = 100 °C?

The SPD04N60C3 supports 4 A continuous drain current when case temperature is maintained at 100 °C, verified per datasheet Section 6.1 (Maximum Ratings). This rating assumes adequate PCB copper area (≥10 cm² 2 oz Cu) under the exposed drain pad and natural convection cooling.

Does SPD04N60C3 require a negative gate voltage for reliable turn-off?

No. SPD04N60C3 has a gate threshold voltage (V_GS(th)) of 2.5–3.5 V and is fully enhanced at V_GS = 10 V. It operates reliably with 0 V to 10 V gate drive; negative bias is unnecessary unless operating in extreme dv/dt environments (>20 V/ns) with marginal layout.

Can SPD04N60C3 replace SPD04N60C3AT or SPD04N60C3BT in production?

Yes-SPD04N60C3 is the base part number. SPD04N60C3AT denotes halogen-free packaging (standard), while SPD04N60C3BT uses non-halogen-free compound (TO-251 variant). For TO-252 assembly, only SPD04N60C3AT applies; BT suffix is not offered in DPAK.

What is the typical reverse recovery time (t_rr) of the integrated body diode?

The body diode exhibits t_rr = 120 ns (typical) at I_F = 4 A, dI_F/dt = 100 A/µs, and T_j = 25 °C, per datasheet Section 7.5. This value decreases to ~95 ns at T_j = 125 °C due to reduced minority carrier lifetime.

SPD04N60C3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD04N60C3 FAQ

1.How can I place an order for SPD04N60C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD04N60C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD04N60C3 reliable?

The price and inventory of SPD04N60C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD04N60C3 is usually 5 days.

3.What payment methods are accepted for SPD04N60C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD04N60C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD04N60C3?

SPD04N60C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD04N60C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD04N60C3?

For technical support, including SPD04N60C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD04N60C3 requirements.

6.How does Aetrix verify that SPD04N60C3 is sourced from the original manufacturer or authorized distributors?

All SPD04N60C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD04N60C3 meets industry standards.

7.What is the process for return or replacement of SPD04N60C3?

All SPD04N60C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPD04N60C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD04N60C3 part is unused and in its original packaging.

Return procedure for SPD04N60C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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