Infineon Technologies SPD04N60S5BTMA1

Overview

SPD04N60S5BTMA1 from Infineon Technologies is a 600 V, 4.5 A Cool MOS™ N-channel power transistor in PG-TO252 (DPAK) package, featuring R_DS(on) = 0.95 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 17.6–22.9 nC), and periodic avalanche rating. It serves as a high-efficiency switching element in offline SMPS primary-side power stages.

For engineers reviewing the SPD04N60S5BTMA1 datasheet, SPD04N60S5BTMA1 pinout, SPD04N60S5BTMA1 application, or SPD04N60S5BTMA1 equivalent, key selection criteria include its 600 V V_DS, 0.95 Ω R_DS(on), 20 V/ns dv/dt capability, 130 mJ single-pulse avalanche energy, and thermal resistance R_thJC = 2.5 K/W - all critical for reliable high-voltage flyback and PFC designs.

Technical Context

This device implements Infineon's 5th-generation Cool MOS™ superjunction architecture optimized for reduced conduction and switching losses. Its low effective output capacitance (C_o(er) = 20 pF, C_o(tr) = 35 pF) and minimized reverse transfer capacitance (C_rss = 7 pF) enable fast, low-noise turn-off with controlled EMI in hard-switched topologies.

The transistor supports robust operation under repetitive avalanche stress (I_AR = 4.5 A, E_AR = 0.4 mJ) and features a gate threshold voltage of 3.5–5.5 V with tight distribution, ensuring stable drive margin across temperature. Its body diode exhibits t_rr = 900–1530 ns and Q_rr = 3.2 µC, suitable for quasi-resonant and discontinuous conduction mode converters.

Key Specifications

Pinout & Package

SPD04N60S5BTMA1 is housed in PG-TO252 (DPAK) package - surface-mount, single-ended lead frame with exposed drain pad for thermal enhancement. The package complies with JEDEC MO-238 and supports reflow soldering (MSL3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power transistor applications.

Compared with STP4NK60ZFP and IPP60R099C6, SPD04N60S5BTMA1 delivers optimal balance of low R_DS(on), ultra-low Q_g, and surface-mount DPAK packaging - making it ideal for space-constrained, high-frequency (>100 kHz), and thermally sensitive offline power supplies.

Availability

SPD04N60S5BTMA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, LED driver primary-side switching, and AC-DC adapters requiring stable component supply and long-term manufacturability.

Supply support for SPD04N60S5BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's Cool MOS™ S5 family - engineered for high-efficiency, high-reliability switching in 600 V offline power conversion, emphasizing low gate charge, avalanche ruggedness, and thermal performance in compact packages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPD04N60S5BTMA1 supports a continuous drain current of 2.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO252 package and must be verified against actual PCB layout and heatsinking in the target application.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.5–5.5 V and is fully enhanced with V_GS ≥ 10 V. A negative gate voltage is not required; however, driving V_GS to 0 V (not negative) ensures complete turn-off and avoids unintended conduction due to capacitive coupling.

Can SPD04N60S5BTMA1 replace SPD04N60S3 in an existing design?

Yes - both share identical pinout, package, and voltage rating, but SPD04N60S5BTMA1 offers lower R_DS(on) (0.95 Ω vs. 1.2 Ω for S3) and improved dv/dt immunity (20 V/ns vs. 15 V/ns). Layout and gate drive remain compatible, though efficiency gains may require minor loop optimization.

What is the recommended PCB copper area for thermal performance in SMD mounting?

For optimal thermal performance, Infineon specifies a 6 cm² copper area (single-layer, 70 µm thick) on FR4 PCB connected to the drain pad. This achieves R_thJA = 35 K/W - significantly better than the 62 K/W value for minimal footprint - and is essential for sustained 4.5 A operation at elevated ambient temperatures.