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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD04N80C3BTMA1

Name: SPD04N80C3BTMA1
Brand: Infineon Technologies
SKU: SPD04N80C3BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD04N80C3BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD04N80C3BTMA1.pdf

Description:: MOSFET N-CH 800V 4A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,050

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Product details

Overview

SPD04N80C3BTMA1 from Infineon Technologies is an 800 V, 4 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO252-3 (DPAK) package, featuring R_DS(on) = 1.1 Ω (typ) at T_j = 25 °C, Q_g = 23 nC (typ), and ultra-low C_oss = 25 pF - optimized for high-efficiency active-clamp forward converters in industrial SMPS with ≥400 V DC bulk.

For engineers reviewing the SPD04N80C3BTMA1 datasheet, SPD04N80C3BTMA1 pinout, SPD04N80C3BTMA1 application, or SPD04N80C3BTMA1 equivalent, key selection criteria include its 800 V V_(BR)DSS, 1.1 Ω R_DS(on) at 10 V_GS, 23 nC gate charge, 170 mJ single-pulse avalanche energy, and dv/dt ruggedness up to 4 V/ns under specified conditions.

Technical Context

This device implements Infineon's third-generation CoolMOS™ superjunction architecture, enabling high-voltage operation with reduced conduction and switching losses. Its low effective output capacitance (C_o(er) = 19 pF) and fast switching (t_r = 15 ns, t_f = 12 ns) support high-frequency hard-switched topologies.

The integrated body diode exhibits t_rr = 520 ns and Q_rr = 4 µC at V_R = 400 V, I_F = 4 A, di_F/dt = 100 A/µs, making it suitable for synchronous rectification and resonant transitions where diode recovery behavior critically impacts EMI and loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - supports DC link voltages up to 640 V with margin for transient overvoltage in industrial SMPS.
R_DS(on) max @ 25 °C	1.3 Ω - ensures low conduction loss at rated 4 A continuous drain current in thermally constrained SMD layouts.
Q_g typ	23 nC - enables efficient gate drive with moderate-current drivers (e.g., 1–2 A peak) while minimizing switching loss.
C_oss	25 pF - reduces capacitive turn-off loss and improves light-load efficiency in high-frequency converters.
E_AS	170 mJ - provides robust single-pulse avalanche capability during overvoltage events without failure.
dv/dt ruggedness	4 V/ns - withstands rapid voltage transients in high-dV/dt environments like active-clamp circuits.
T_j range	−55 °C to 150 °C - qualified for industrial ambient and junction temperature extremes per JEDEC.

Pinout & Package

SPD04N80C3BTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal performance. The package features standard 3-pin configuration: Drain (Pin 1 & 2, tab), Source (Pin 3), Gate (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin 1)	Main high-side current path	Electrically connected to PCB copper pour for thermal dissipation; requires solder mask opening and thermal vias.
Gate (Pin 2)	Control terminal for channel modulation	Low-impedance input (R_G = 1.2 Ω typ); sensitive to ESD - requires gate resistor and clamping in layout.
Source (Pin 3)	Reference node for gate drive and current sensing	Common return path for load current and gate loop; must minimize inductance to suppress ringing.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 23 nC (typ) - reduces driver power consumption and enables higher PWM frequencies without excessive gate loss.
High dv/dt ruggedness	4 V/ns - maintains reliable operation during fast voltage transitions in active-clamp and ZVS circuits.
JEDEC industrial qualification	Qualified per JESD47 - ensures reliability in continuous operation at T_j ≤ 150 °C across manufacturing lots.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets environmental compliance requirements for global industrial shipments.
Low effective output capacitance	C_o(er) = 19 pF - minimizes stored energy in C_oss, reducing turn-off loss and improving efficiency above 100 kHz.

Applications

Industrial SMPS

Active-Clamp Forward Converters

Use Scenario: 400–640 V DC input offline power supplies for PLCs, motor drives, and industrial IoT gateways.

IC Role / Device Role / Timing Role: Primary high-side switching transistor in hard-switched flyback or forward topology operating at 50–200 kHz.

Use Value: 1.1 Ω R_DS(on) and 23 nC Q_g enable >92% full-load efficiency at 100 kHz while maintaining thermal stability on minimal PCB copper.

Use Scenario: High-efficiency isolated DC-DC modules in telecom rectifiers and server PSUs requiring zero-voltage switching assist.

IC Role / Device Role / Timing Role: Main switch subjected to controlled voltage clamp during turn-off to limit dV/dt and recover energy.

Use Value: 4 V/ns dv/dt rating and 170 mJ E_AS ensure safe operation under repeated clamping transients without derating.

Industrial Lighting Ballasts

High-Voltage Auxiliary Supplies

Use Scenario: LED driver front-end stages handling 400 V PFC output in outdoor and high-bay lighting systems.

IC Role / Device Role / Timing Role: Bulk-switching MOSFET in quasi-resonant or fixed-frequency flyback with wide input variation.

Use Value: Low C_oss (25 pF) and fast t_f (12 ns) reduce switching loss and audible noise during dimming transitions.

Use Scenario: Standby and auxiliary power supplies in industrial HMIs and control panels with 800 V isolation requirements.

IC Role / Device Role / Timing Role: Isolated high-side switch in flyback or forward-derived auxiliary converter.

Use Value: 800 V V_(BR)DSS and −55 °C to 150 °C T_j range support long-term reliability in unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD65R1K0CFD7	650 V rating, R_DS(on) = 1.0 Ω, Q_g = 14 nC - lower voltage headroom but faster switching.	Suitable only for ≤450 V DC bus; not recommended for 640 V active-clamp designs.	Select only if system DC link is capped at 450 V and priority is gate drive simplicity.
STP4NK80ZFP	800 V rating, R_DS(on) = 1.6 Ω, Q_g = 32 nC - higher conduction and switching loss than SPD04N80C3.	Acceptable for lower-frequency (<60 kHz), lower-power (<100 W) industrial supplies with relaxed efficiency targets.	Choose when cost sensitivity outweighs efficiency and thermal constraints.

Compared with IPD65R1K0CFD7 and STP4NK80ZFP, SPD04N80C3BTMA1 uniquely balances 800 V capability, 1.1 Ω conduction resistance, and 23 nC gate charge - delivering optimal trade-off between voltage margin, thermal performance, and switching speed in 100–200 kHz industrial SMPS.

Availability

SPD04N80C3BTMA1 is available at Aetrix Electronics and suitable for industrial SMPS, active-clamp forward converters, industrial lighting ballasts, and high-voltage auxiliary supplies requiring stable component supply across extended production cycles.

Supply support for SPD04N80C3BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPD04N80C3BTMA1 belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability industrial switch-mode power supplies operating at elevated DC bus voltages and demanding thermal environments.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The SPD04N80C3BTMA1 supports 2.5 A continuous drain current at case temperature of 100 °C, as specified in its absolute maximum ratings table. This value reflects thermal derating due to reduced heat dissipation at elevated mounting temperatures and assumes proper PCB copper area and thermal vias per Infineon's recommended layout guidelines.

Does this MOSFET have an integrated body diode, and what are its reverse recovery characteristics?

Yes, SPD04N80C3BTMA1 includes a monolithic body diode with t_rr = 520 ns and Q_rr = 4 µC under V_R = 400 V, I_F = 4 A, and di_F/dt = 100 A/µs. Its soft recovery behavior minimizes voltage overshoot and EMI in hard-switched topologies, though synchronous rectification is not recommended without external control.

Can SPD04N80C3BTMA1 be used in avalanche mode repeatedly?

No - repetitive avalanche is not rated. While the device guarantees 170 mJ single-pulse avalanche energy (E_AS), repetitive avalanche causes uncontrolled localized heating and is not characterized or guaranteed. System design must avoid conditions that trigger repeated avalanche, such as excessive V_DS overshoot beyond 800 V during switching.

What is the thermal resistance from junction to case (R_thJC)?

The junction-to-case thermal resistance is 2 K/W, measured under standard test conditions with the device mounted on a reference copper block. This value enables accurate junction temperature estimation when combined with measured case temperature and power dissipation, supporting thermal design validation for industrial applications.

SPD04N80C3BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD04N80C3BTMA1 FAQ

1.How can I place an order for SPD04N80C3BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD04N80C3BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD04N80C3BTMA1 reliable?

The price and inventory of SPD04N80C3BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD04N80C3BTMA1 is usually 5 days.

3.What payment methods are accepted for SPD04N80C3BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD04N80C3BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD04N80C3BTMA1?

SPD04N80C3BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD04N80C3BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD04N80C3BTMA1?

For technical support, including SPD04N80C3BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD04N80C3BTMA1 requirements.

6.How does Aetrix verify that SPD04N80C3BTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD04N80C3BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD04N80C3BTMA1 meets industry standards.

7.What is the process for return or replacement of SPD04N80C3BTMA1?

All SPD04N80C3BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD04N80C3BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD04N80C3BTMA1 part is unused and in its original packaging.

Return procedure for SPD04N80C3BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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