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Infineon Technologies SPD07N20GBTMA1

Name: SPD07N20GBTMA1
Brand: Infineon Technologies
SKU: SPD07N20GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD07N20GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD07N20GBTMA1.pdf

Description:: MOSFET N-CH 200V 7A TO252-3

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Product details

Overview

SPD07N20GBTMA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 200 V drain-source voltage, 7 A continuous drain current at T_C = 25 °C, and 0.4 Ω maximum R_DS(on) at V_GS = 10 V and I_D = 4.5 A. It features avalanche rating (E_AS = 120 mJ), dv/dt ruggedness (6 kV/µs), and integrated body diode with 1.3–1.7 V forward voltage at 14 A - used in DC-DC converters, motor control half-bridges, and industrial power supplies.

For engineers reviewing the SPD07N20GBTMA1 datasheet, SPD07N20GBTMA1 pinout, SPD07N20GBTMA1 application, or SPD07N20GBTMA1 equivalent, key selection criteria include its PG-TO252 (DPAK) package thermal resistance (R_thJC = 3.1 K/W), gate charge profile (Q_g = 21–31.5 nC), reverse recovery characteristics (t_rr = 200–300 ns, Q_rr = 0.6–0.9 µC), and temperature-stable threshold voltage (V_GS(th) = 2.1–4.0 V).

Technical Context

This MOSFET operates in enhancement mode with a typical transconductance (g_fs) of 4.2 S at I_D = 4.5 A, enabling precise gate-driven switching in hard-switched topologies. Its output capacitance (C_oss = 85–130 pF) and reverse transfer capacitance (C_rss = 45–70 pF) support moderate-frequency operation up to ~500 kHz in non-resonant converters.

The device integrates a fast, low-loss body diode with t_rr ≤ 300 ns and Q_rr ≤ 0.9 µC, allowing reliable freewheeling in synchronous rectification and half-bridge configurations without external diode supplementation. Thermal design is enabled by its 3.1 K/W junction-to-case resistance and 75 K/W junction-to-ambient rating on 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V RMS AC line inputs with 20% margin in offline SMPS
R_DS(on) max	0.4 Ω at V_GS = 10 V, I_D = 4.5 A - enables <1.8 W conduction loss at 7 A
I_D cont	7 A at T_C = 25 °C - suitable for 50–100 W power stages with forced-air cooling
E_AS	120 mJ single-pulse avalanche energy - withstands inductive turn-off surges in relay/motor drive
t_r/t_f	40–60 ns / 30–40 ns - supports clean 100–300 kHz switching with minimal overlap loss
Q_g	21–31.5 nC - determines gate driver current requirement (~1.5 A peak for 20 ns rise)
V_GS(th)	2.1–4.0 V - ensures robust noise immunity and predictable turn-on at 5 V logic

Pinout & Package

SPD07N20GBTMA1 is housed in a Pb-free PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal management. The case outline conforms to JEDEC TO-252AA, and the package supports solder-reflow assembly per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; input capacitance C_iss = 400–530 pF
Pin 2 (D)	Drain	Main high-side power terminal; electrically connected to exposed copper pad for thermal conduction
Pin 3 (S)	Source	Power return and gate reference node; ties to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed 120 mJ single-pulse energy handling without failure - eliminates need for external snubbers in inductive loads
dv/dt ruggedness	Rated 6 kV/µs - prevents false turn-on during high-slew-rate voltage transients in bridge circuits
Integrated body diode	1.3–1.7 V V_SD at 14 A with t_rr ≤ 300 ns - enables efficient freewheeling in half-bridge and synchronous buck topologies
Thermal performance	R_thJC = 3.1 K/W - allows >30 W dissipation with modest heatsinking; R_thJA = 75 K/W on 6 cm² PCB copper

Applications

Motor Drive Half-Bridge

Industrial DC-DC Converter

Use Scenario: Driving brushed DC motors or stepper phase windings in factory automation controllers.

IC Role / Device Role / Timing Role: High-side or low-side switch in H-bridge configuration; handles bidirectional current up to 7 A.

Use Value: Avalanche rating absorbs back-EMF spikes; low R_DS(on) minimizes heat generation during continuous PWM operation.

Use Scenario: Primary-side switch in isolated 24 V to 48 V industrial DC-DC modules delivering up to 100 W.

IC Role / Device Role / Timing Role: Main power switch in flyback or forward converter operating at 200–300 kHz.

Use Value: Low Q_g and fast switching reduce driver losses; stable V_GS(th) ensures consistent timing across temperature.

AC-DC Power Supply

LED Driver Power Stage

Use Scenario: PFC boost switch in universal-input (85–265 VAC) offline power supplies.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch handling 200 V blocking and 7 A peak current.

Use Value: 200 V V_DS rating provides margin above 375 V DC bus; dv/dt rating prevents spurious turn-on during zero-crossing transitions.

Use Scenario: Constant-current switch in high-brightness LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: PWM-controlled current regulator in buck or buck-boost topology driving 1–5 A LED strings.

Use Value: Integrated body diode enables simple, low-component-count designs; low R_DS(on) maintains >92% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK20ZFP	200 V, 7 A, R_DS(on) = 0.4 Ω, TO-220FP package, no avalanche rating	Lacks E_AS spec; higher R_thJA (62 K/W) limits power density	Prefer SPD07N20GBTMA1 where board space, thermal performance, or inductive surge immunity is critical
IRF640NPBF	200 V, 18 A, R_DS(on) = 0.18 Ω, TO-220 package, lower dv/dt rating (4.5 kV/µs)	Higher current rating but larger footprint and less rugged against voltage transients	Choose SPD07N20GBTMA1 for compact SMD designs requiring dv/dt immunity and avalanche safety margin

Compared with STP7NK20ZFP and IRF640NPBF, SPD07N20GBTMA1 delivers superior thermal efficiency (R_thJC = 3.1 K/W), guaranteed avalanche capability, and industry-leading dv/dt immunity - making it optimal for space-constrained, high-reliability industrial power stages.

Availability

SPD07N20GBTMA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, AC-DC power supplies, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for SPD07N20GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's SIPMOS™ family of high-voltage power MOSFETs, engineered for robust switching performance, avalanche reliability, and thermal efficiency in industrial and consumer power conversion systems.

FAQ

What is the maximum gate-source voltage rating for SPD07N20GBTMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0–5 V logic-level compatibility limited by V_GS(th) variation (2.1–4.0 V). Gate resistors must limit peak current during fast switching to avoid ringing.

Can SPD07N20GBTMA1 be used in synchronous rectification?

Yes - its integrated body diode has t_rr = 200–300 ns and Q_rr = 0.6–0.9 µC, enabling use in synchronous buck or LLC secondary-side rectification up to ~300 kHz. However, external Schottky diodes remain preferred for ultra-low V_F below 0.5 V in high-efficiency designs.

What is the thermal resistance from junction to ambient under standard PCB conditions?

On a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area for the drain pad, R_thJA is 75 K/W. This value assumes vertical mounting without forced airflow. With minimal copper (no added cooling area), R_thJA rises to 100 K/W - limiting usable power to ~15 W at 75 °C ambient.

Does SPD07N20GBTMA1 require a gate driver IC for 200 kHz operation?

Yes - due to Q_g = 21–31.5 nC and required dV/dt control, a dedicated gate driver (e.g., Infineon 1EDN7512B) is recommended. Direct microcontroller GPIO driving is insufficient; typical gate resistor values range from 5–15 Ω to balance switching speed and ringing suppression.

SPD07N20GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD07N20GBTMA1 FAQ

1.How can I place an order for SPD07N20GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD07N20GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD07N20GBTMA1 reliable?

The price and inventory of SPD07N20GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD07N20GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD07N20GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD07N20GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD07N20GBTMA1?

SPD07N20GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD07N20GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD07N20GBTMA1?

For technical support, including SPD07N20GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD07N20GBTMA1 requirements.

6.How does Aetrix verify that SPD07N20GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD07N20GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD07N20GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD07N20GBTMA1?

All SPD07N20GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD07N20GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD07N20GBTMA1 part is unused and in its original packaging.

Return procedure for SPD07N20GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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