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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD07N60S5

Name: SPD07N60S5
Brand: Infineon Technologies
SKU: SPD07N60S5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD07N60S5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD07N60S5.pdf

Description:: MOSFET N-CH 600V 7.3A TO252-3

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Product details

Overview

SPD07N60S5 from Infineon Technologies is a 600 V, 7.3 A Cool MOS™ power transistor in PG-TO252 (DPAK) and PG-TO251 (IPAK) packages, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 27–35 nC), and periodic avalanche rating. It serves as a high-efficiency switching element in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SPD07N60S5 datasheet, SPD07N60S5 pinout, SPD07N60S5 application, or SPD07N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 230 mJ single-pulse avalanche energy, 970 pF input capacitance, and thermal resistance of 1.5 K/W (junction-to-case), critical for high-reliability 600 V hard-switching topologies.

Technical Context

This device employs Infineon's 5th-generation Cool MOS™ superjunction technology, optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and resonant LLC converters. Its low effective output capacitance (C_o(er) = 30 pF) and reverse transfer capacitance (C_rss = 10 pF) minimize turn-off loss and improve EMI behavior.

The transistor supports gate drive with standard 10 V logic-level signals and exhibits stable transconductance (g_fs = 4 S typ.) across temperature. Its body diode has t_rr = 750–1275 ns and Q_rr = 4.9 µC, enabling moderate-frequency synchronous rectification in flyback and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains voltage surge in 230 V AC systems with margin.
R_DS(on)	0.6 Ω max at 10 V, 25 °C - Enables low conduction loss in 7.3 A continuous drain applications.
Q_g	27–35 nC - Reduces gate driver power requirement and switching transition time.
E_AS	230 mJ - Supports robust single-pulse avalanche operation without failure in overvoltage events.
C_iss	970 pF - Determines Miller effect magnitude and influences gate drive stability.
t_r/t_f	40 ns / 20–30 ns - Enables fast switching at >100 kHz while limiting dV/dt-induced noise.
V_GS(th)	3.5–5.5 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-compatible drivers.

Pinout & Package

SPD07N60S5 is available in two surface-mount packages: PG-TO252 (DPAK) and PG-TO251 (IPAK), both with three terminals and identical pin assignment. Thermal performance is optimized via exposed drain pad soldered to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Connected to ground or low-side reference; carries full load current and sets body diode cathode.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-charge drive; sensitive to ESD and layout parasitics.
3 (Drain)	Main power output node	Exposed metal pad in DPAK/IPAK; electrically and thermally connected to PCB heatsink area.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 27–35 nC enables efficient 100–300 kHz switching with minimal driver loss.
Periodic avalanche rated	Repetitive I_AR = 7.3 A and E_AR = 0.5 mJ support fault-tolerant operation in unclamped inductive loads.
Extreme dv/dt immunity	20 V/ns rating prevents false turn-on during high-slew-rate voltage transients in bridge legs.
Low effective output capacitance	C_o(er) = 30 pF reduces stored energy loss during hard-switching transitions.
Improved transconductance	g_fs = 4 S ensures stable gain and predictable ID vs. VGS behavior across temperature.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating in CCM boost topology at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching transistor handling 7.3 A RMS input current and 600 V DC bus.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, improving full-load efficiency by ≥0.3% versus prior-gen MOSFETs.

Use Scenario: 3 kW industrial AC-DC front-end with active PFC using interleaved boost configuration.

IC Role / Device Role / Timing Role: High-voltage switch in each boost leg, operating at 50–70 kHz with 4.6 A average current per phase.

Use Value: 20 V/ns dv/dt rating prevents spurious turn-on during phase-shifted switching, enhancing system reliability.

Motor Drive Half-Bridge

LED Driver Flyback Switch

Use Scenario: 1.5 kW variable-frequency drive for HVAC compressors using 600 V half-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive avalanche during freewheeling and short-circuit events.

Use Value: 230 mJ E_AS and 7.3 A I_AR allow safe clamping of inductive kickback without external snubbers.

Use Scenario: Isolated 150 W constant-current LED driver for street lighting with universal AC input.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback, conducting peak currents up to 14.6 A.

Use Value: Low C_oss (370 pF) and Crss (10 pF) enable ZVS operation at light loads, reducing switching loss and audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	R_DS(on) = 0.75 Ω, Q_g = 32 nC, no specified dv/dt rating	Lacks explicit 20 V/ns immunity; requires stronger gate drive for same switching speed	Preferred where cost sensitivity outweighs dv/dt robustness and efficiency targets
IPP60R099C6	R_DS(on) = 0.099 Ω, 650 V rating, higher price, TO-220FP package	Lower R_DS(on) but larger footprint and different thermal interface; not drop-in compatible	Selected when <0.1 Ω on-resistance is mandatory and board space allows TO-220FP mounting

Compared with STP7NK60ZFP and IPP60R099C6, SPD07N60S5 delivers optimal balance of low gate charge, proven dv/dt immunity, and DPAK/IPAK thermal performance-making it preferred for compact, high-reliability 600 V SMPS designs where layout constraints and transient robustness are critical.

Availability

SPD07N60S5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, motor drive inverters, and LED lighting systems requiring stable component supply and long-term manufacturability.

Supply support for SPD07N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The Cool MOS™ product line targets high-efficiency, high-reliability power conversion in 500–900 V applications, emphasizing low switching loss, avalanche ruggedness, and thermal robustness for industrial and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPD07N60S5 supports 4.6 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects junction temperature limits and thermal resistance (R_thJC = 1.5 K/W); actual usable current depends on heatsinking and ambient conditions.

Does SPD07N60S5 have a built-in body diode, and what are its recovery characteristics?

Yes, SPD07N60S5 integrates a fast-recovery body diode with typical reverse recovery time t_rr = 750–1275 ns and Q_rr = 4.9 µC at T_j = 25 °C. These values are measured under standardized conditions (V_R = 350 V, dI_F/dt = 100 A/µs) and support moderate-frequency freewheeling in flyback and half-bridge topologies.

Can SPD07N60S5 be used in zero-voltage switching (ZVS) circuits?

Yes-its low C_oss (370 pF typ.), C_rss (10 pF), and C_o(er) (30 pF) facilitate ZVS operation in resonant converters like LLC and QR flyback. The device's soft recovery and low stored energy (E_oss ≈ 3.5 µJ at 480 V) reduce turn-on loss and EMI generation.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A gate resistor of 10–15 Ω is recommended for 100 kHz hard-switching with SPD07N60S5, balancing switching speed (t_r/t_f ≈ 40/25 ns) against gate oscillation and EMI. Lower values increase dv/dt stress; higher values raise switching loss-optimal value depends on driver strength and PCB layout parasitics.

SPD07N60S5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD07N60S5 FAQ

1.How can I place an order for SPD07N60S5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD07N60S5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD07N60S5 reliable?

The price and inventory of SPD07N60S5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD07N60S5 is usually 5 days.

3.What payment methods are accepted for SPD07N60S5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD07N60S5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD07N60S5?

SPD07N60S5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD07N60S5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD07N60S5?

For technical support, including SPD07N60S5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD07N60S5 requirements.

6.How does Aetrix verify that SPD07N60S5 is sourced from the original manufacturer or authorized distributors?

All SPD07N60S5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD07N60S5 meets industry standards.

7.What is the process for return or replacement of SPD07N60S5?

All SPD07N60S5 units undergo pre-shipment inspection (PSI). If there is an issue with SPD07N60S5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD07N60S5 part is unused and in its original packaging.

Return procedure for SPD07N60S5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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