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Infineon Technologies SPD07N60S5BTMA1

Name: SPD07N60S5BTMA1
Brand: Infineon Technologies
SKU: SPD07N60S5BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD07N60S5BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD07N60S5BTMA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPD07N60S5BTMA1 from Infineon Technologies is a 600 V, 7.3 A Cool MOS™ power transistor in PG-TO252 (DPAK) package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 27–35 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switching device in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPD07N60S5BTMA1 datasheet, SPD07N60S5BTMA1 pinout, SPD07N60S5BTMA1 application, or SPD07N60S5BTMA1 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 230 mJ single-pulse avalanche energy, 970 pF input capacitance, and thermal resistance R_thJC = 1.5 K/W - critical for high-reliability, high-density power designs.

Technical Context

This N-channel enhancement-mode superjunction MOSFET employs Infineon's 5th-generation Cool MOS™ technology optimized for hard-switched and resonant topologies. Its low effective output capacitance (C_o(er) = 30 pF, C_o(tr) = 55 pF) and high transconductance (g_fs = 4 S typ.) enable fast switching with reduced turn-off losses and improved EMI behavior.

The device integrates a robust body diode with t_rr = 750–1275 ns and Q_rr = 4.9 µC, supporting quasi-resonant and ZVS operation. Its ±20 V gate-source voltage rating and 125 °C maximum junction temperature support stable operation under transient overvoltage and thermal stress in universal-input 85–265 V_AC systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50 % margin for surge and ringing in offline converters
R_DS(on)	0.6 Ω max at 10 V_GS, 25 °C - enables <1.5 W conduction loss at 7.3 A in continuous mode
Q_g	27–35 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
E_AS	230 mJ - withstands single-pulse inductive energy without failure in flyback or LLC primary switches
dv/dt Rating	20 V/ns - suppresses false triggering during high-slew-rate switching in noisy industrial environments
C_iss	970 pF - balances switching speed and EMI; enables predictable gate drive loop design
R_thJC	1.5 K/W - permits >80 W power dissipation with modest heatsinking in TO252 footprint

Pinout & Package

SPD07N60S5BTMA1 is housed in PG-TO252 (DPAK) package: surface-mount, 3-terminal, single-drain tab configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives PWM signal; requires low-impedance drive due to 27–35 nC total gate charge
2 (Source)	Reference node	Common return path for gate drive and load current; ties to power ground in non-isolated topologies
3 (Drain)	High-voltage power terminal	Connected to DC bus or transformer primary; electrically and thermally coupled to PCB copper area via exposed pad

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 27–35 nC enables efficient 100–300 kHz switching with minimal driver loss
Periodic avalanche rated	EAR = 0.5 mJ at 7.3 A supports repetitive inductive turn-off stress in motor drives
Extreme dv/dt immunity	20 V/ns rating prevents spurious turn-on during fast voltage transients on drain
Low effective output capacitance	C_o(er) = 30 pF reduces stored energy loss during hard-switching transitions
Improved transconductance	g_fs = 4 S ensures stable gain and tight V_GS(th) control across temperature

Applications

Industrial SMPS

Server PSU

Use Scenario: 1 kW open-frame AC-DC power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology operating at 200 kHz.

Use Value: 0.6 Ω R_DS(on) and 230 mJ E_AS reduce conduction loss and improve surge survivability vs. legacy 650 V MOSFETs.

Use Scenario: High-density 80 PLUS Titanium server power supply with digital control.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge primary stage.

Use Value: Low C_iss (970 pF) and C_o(tr) (55 pF) minimize dead-time loss and improve ZVS range at light load.

PFC Boost Converter

Motor Drive Inverter

Use Scenario: Two-phase interleaved boost PFC stage in telecom rectifier.

IC Role / Device Role / Timing Role: Switching element handling 12 A peak current per phase at 100 kHz.

Use Value: 7.3 A continuous ID and 14.6 A pulsed rating support high-current ripple without derating.

Use Scenario: 3-phase inverter stage in HVAC compressor drive (2–5 kW).

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter leg.

Use Value: Body diode t_rr = 750–1275 ns and Q_rr = 4.9 µC reduce commutation loss and diode recovery noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	R_DS(on) = 0.75 Ω, Q_g = 35 nC, no specified dv/dt rating	Lacks 20 V/ns immunity and avalanche energy spec; less robust in high-noise environments	Prefer SPD07N60S5BTMA1 where EMI margin or surge resilience is critical
IPP60R099C7	600 V, R_DS(on) = 0.099 Ω, Q_g = 42 nC, higher cost and larger TO-220FP package	Better conduction loss but higher gate drive demand and board space requirement	Select SPD07N60S5BTMA1 when DPAK footprint and balanced Q_g/R_DS(on) are prioritized

Compared with STP7NK60ZFP and IPP60R099C7, SPD07N60S5BTMA1 delivers optimal trade-off between low R_DS(on), moderate Q_g, industry-leading dv/dt immunity, and compact DPAK packaging - making it ideal for space-constrained, high-reliability 600 V switching applications.

Availability

SPD07N60S5BTMA1 is available at Aetrix Electronics and suitable for industrial SMPS, server PSUs, PFC boost converters, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPD07N60S5BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's Cool MOS™ 5th-generation superjunction power transistor family, engineered for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current for SPD07N60S5BTMA1 at 100 °C case temperature?

The maximum continuous drain current is 4.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to junction-to-case thermal resistance (1.5 K/W) and ambient constraints. Operation above this current requires active cooling or pulse-width limitation to maintain T_j ≤ 150 °C.

Does SPD07N60S5BTMA1 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode rated for 7.3 A continuous forward current (I_S) and 14.6 A pulsed (I_SM). Key parameters include V_SD = 1.0–1.2 V at I_S, reverse recovery time t_rr = 750–1275 ns, and Q_rr = 4.9 µC at dI_F/dt = 100 A/µs - enabling reliable operation in quasi-resonant and synchronous rectification circuits.

Can SPD07N60S5BTMA1 be used in avalanche mode, and what are the limits?

Yes, it is explicitly rated for periodic avalanche with E_AR = 0.5 mJ at I_D = 7.3 A and V_DD = 50 V, and single-pulse avalanche energy E_AS = 230 mJ. Repetitive avalanche must respect t_AR-limited SOA curves and avoid exceeding average power dissipation limits derived from P_AV = E_AR × f.

What is the recommended gate resistor value for typical 200 kHz hard-switched operation?

A gate resistor of 10–12 Ω is recommended for 200 kHz operation with V_GS = 0–10 V drive, balancing switching speed (t_d(on) ≈ 120 ns, t_f ≈ 20–30 ns) and gate oscillation damping. Lower values increase dv/dt stress; higher values raise switching losses. Layout-dependent parasitic inductance must also be minimized to prevent ringing.

SPD07N60S5BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252

SPD07N60S5BTMA1 FAQ

1.How can I place an order for SPD07N60S5BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD07N60S5BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD07N60S5BTMA1 reliable?

The price and inventory of SPD07N60S5BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD07N60S5BTMA1 is usually 5 days.

3.What payment methods are accepted for SPD07N60S5BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD07N60S5BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD07N60S5BTMA1?

SPD07N60S5BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD07N60S5BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD07N60S5BTMA1?

For technical support, including SPD07N60S5BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD07N60S5BTMA1 requirements.

6.How does Aetrix verify that SPD07N60S5BTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD07N60S5BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD07N60S5BTMA1 meets industry standards.

7.What is the process for return or replacement of SPD07N60S5BTMA1?

All SPD07N60S5BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD07N60S5BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD07N60S5BTMA1 part is unused and in its original packaging.

Return procedure for SPD07N60S5BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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