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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD08N50C3BTMA1

Name: SPD08N50C3BTMA1
Brand: Infineon Technologies
SKU: SPD08N50C3BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD08N50C3BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD08N50C3BTMA1.pdf

Description:: MOSFET N-CH 560V 7.6A TO252-3

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Product details

Overview

SPD08N50C3BTMA1 from Infineon Technologies is a 500 V, 7.6 A N-channel CoolMOS™ C3 power MOSFET in TO-252 (DPAK) package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 32 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS for industrial AC/DC adapters.

For engineers reviewing the SPD08N50C3BTMA1 datasheet, SPD08N50C3BTMA1 pinout, SPD08N50C3BTMA1 application, or SPD08N50C3BTMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.6 Ω R_DS(on), 32 nC total gate charge, 50 V/ns dv/dt capability, and TO-252 thermal resistance of 1.5 K/W (junction-to-case).

Technical Context

This device employs Infineon's third-generation CoolMOS™ superjunction technology, enabling reduced conduction and switching losses simultaneously. Its optimized cell structure delivers low effective output capacitance (C_o(er) = 56 pF) and reverse transfer capacitance (C_rss = 12 pF), critical for ZVS operation in resonant converters.

The MOSFET supports hard-switched topologies with rated repetitive avalanche current (I_AR = 7.6 A) and single-pulse EAS = 230 mJ at V_DD = 50 V. Gate threshold voltage (V_GS(th) = 2.1–3.9 V) ensures robust noise immunity while maintaining compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands 500 V drain-source breakdown at T_j = 25 °C, derating to 450 V at –60 °C and 560 V at T_jmax.
R_DS(on)	0.6 Ω - On-resistance at V_GS = 10 V and I_D = 4.6 A, T_j = 25 °C; rises to ≤1.5 Ω at 150 °C.
Q_g	32 nC - Total gate charge at V_DD = 400 V, I_D = 7.6 A; enables fast switching with low driver power loss.
E_AS	230 mJ - Single-pulse avalanche energy at I_D = 5.5 A, V_DD = 50 V; supports unclamped inductive switching stress.
dv/dt	50 V/ns - Maximum drain-source voltage slope under specified conditions (V_DS = 400 V, I_D = 7.6 A, T_j = 125 °C); ensures ruggedness in noisy environments.
R_thJC	1.5 K/W - Junction-to-case thermal resistance; enables 83 W continuous power dissipation at T_C = 25 °C with minimal heatsink.

Pinout & Package

SPD08N50C3BTMA1 is housed in a P-TO252-3-1 (DPAK) surface-mount package with exposed drain pad for enhanced thermal performance. The package features three terminals: Drain (pins 1 & 2, internally connected to copper tab), Source (pin 3), and Gate (pin 1, isolated).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2 + Tab)	Main current path input	Internally bonded to large copper drain pad; requires PCB copper pour for thermal management and current handling.
Source (Pin 3)	Reference node for gate drive and current return	Low-inductance source connection essential for stable switching and minimizing V_GS ringing.
Gate (Pin 1)	Control terminal for channel conduction	High-impedance input requiring <100 nA leakage; sensitive to ESD and layout parasitics.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 32 nC enables <100 ns turn-on delay and <7 ns fall time with 12 Ω gate resistor, reducing switching losses in 65–100 kHz SMPS.
Periodic avalanche rated	I_AR = 7.6 A, E_AR = 0.5 mJ - Supports repetitive inductive energy recovery without degradation in flyback or LLC primary switches.
Extreme dv/dt immunity	50 V/ns rating allows reliable operation in high-noise environments like motor drives and industrial inverters without false triggering.
Low effective output capacitance	C_o(er) = 56 pF - Reduces stored energy (E_oss) to <3 µJ at 400 V, improving light-load efficiency in resonant topologies.

Applications

Industrial AC/DC Adapters

Server PSU Primary Switch

Use Scenario: 300–500 W offline flyback or quasi-resonant converter powering PLCs and HMIs.

IC Role / Device Role / Timing Role: High-voltage primary-side power switch operating at 65–100 kHz with zero-voltage switching assist.

Use Value: 0.6 Ω R_DS(on) and 32 nC Q_g reduce conduction and switching losses, achieving >90% efficiency at full load.

Use Scenario: 80 PLUS Titanium-certified 1 kW server power supply using active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main switching element in high-frequency half-bridge leg, handling 400 V DC bus with tight timing control.

Use Value: 50 V/ns dv/dt rating and 56 pF C_o(er) suppress voltage overshoot and EMI during hard commutation.

Solar Microinverter DC-DC Stage

EV Onboard Charger Auxiliary SMPS

Use Scenario: Isolated DC-DC stage stepping down PV string voltage (600–1000 V) to 12 V control rail.

IC Role / Device Role / Timing Role: Primary-side switch in high-input-voltage flyback, stressed by wide V_IN range and partial shading transients.

Use Value: 500 V V_(BR)DSS with 230 mJ E_AS withstands line surges and unclamped inductive spikes without failure.

Use Scenario: Auxiliary 15 W SMPS supplying gate drivers and MCU in 6.6 kW OBC systems.

IC Role / Device Role / Timing Role: Compact, thermally efficient primary switch in DPAK-based design where board space and thermal margin are constrained.

Use Value: 1.5 K/W R_thJC and TO-252 footprint allow full 7.6 A current handling on minimal 6 cm² PCB copper area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	R_DS(on) = 0.75 Ω, Q_g = 34 nC, V_(BR)DSS = 500 V, TO-220FP package	Higher R_DS(on) and through-hole mounting increase conduction loss and assembly cost vs. DPAK SMT	Select when legacy TO-220FP footprint or higher surge current margin is required.
IPP60R099C7	R_DS(on) = 0.099 Ω, Q_g = 53 nC, V_(BR)DSS = 600 V, TO-220 package	Lower R_DS(on) but higher Q_g and 600 V rating increase cost and gate drive complexity for 500 V designs	Select only if system requires >600 V rating or sub-0.1 Ω conduction resistance at expense of switching loss.

Compared with STP8NK50ZFP and IPP60R099C7, SPD08N50C3BTMA1 offers optimal balance of low R_DS(on), ultra-low Q_g, and DPAK thermal performance-making it preferred for compact, high-efficiency 500 V SMPS where board space and thermal management are critical.

Availability

SPD08N50C3BTMA1 is available at Aetrix Electronics and suitable for industrial AC/DC adapters, server power supplies, and solar microinverter auxiliary converters requiring stable component supply and long-term manufacturability.

Supply support for SPD08N50C3BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

SPD08N50C3BTMA1 belongs to the CoolMOS™ C3 family-designed specifically for high-efficiency, high-power-density offline SMPS in industrial, computing, and renewable energy applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPD08N50C3BTMA1 supports 4.6 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and must be validated against actual PCB copper area and ambient conditions.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with I_S = 7.6 A continuous forward current and V_SD = 1.0–1.2 V at I_F = I_S. Reverse recovery charge Q_rr is 3.6 µC and t_rr is 370 ns, making it suitable for synchronous rectification in low-frequency flyback designs but not ideal for high-frequency synchronous buck stages.

Can SPD08N50C3BTMA1 be used in avalanche mode for circuit protection?

Yes-it is explicitly rated for periodic avalanche operation with I_AR = 7.6 A and E_AR = 0.5 mJ per pulse. However, avalanche energy must be calculated as P_AV = E_AR × f, and thermal limits must be verified using transient impedance curves (Z_thJC) to avoid junction overheating.

What is the recommended gate resistor value for optimal switching performance?

A 12 Ω gate resistor is used in the datasheet's switching time test conditions (V_DD = 400 V, I_D = 7.6 A). For most 65–100 kHz SMPS, 10–15 Ω balances switching speed (t_f = 7 ns) and gate driver stress; lower values risk ringing, higher values increase switching losses.

SPD08N50C3BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD08N50C3BTMA1 FAQ

1.How can I place an order for SPD08N50C3BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD08N50C3BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD08N50C3BTMA1 reliable?

The price and inventory of SPD08N50C3BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD08N50C3BTMA1 is usually 5 days.

3.What payment methods are accepted for SPD08N50C3BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD08N50C3BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD08N50C3BTMA1?

SPD08N50C3BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD08N50C3BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD08N50C3BTMA1?

For technical support, including SPD08N50C3BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD08N50C3BTMA1 requirements.

6.How does Aetrix verify that SPD08N50C3BTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD08N50C3BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD08N50C3BTMA1 meets industry standards.

7.What is the process for return or replacement of SPD08N50C3BTMA1?

All SPD08N50C3BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD08N50C3BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD08N50C3BTMA1 part is unused and in its original packaging.

Return procedure for SPD08N50C3BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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