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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD100N03S2L-04

Name: SPD100N03S2L-04
Brand: Infineon Technologies
SKU: SPD100N03S2L-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD100N03S2L-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-5, DPAK (4 Leads + Tab), TO-252AD

Datasheet:: SPD100N03S2L-04.pdf

Description:: MOSFET N-CH 30V 100A TO252-5

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Product details

Overview

SPD100N03S2L-04 from Infineon is an N-channel logic-level enhancement-mode power MOSFET in P-TO252-5-1 package, rated for 30 V V_DS, 4.2 mΩ R_DS(on) at V_GS = 10 V and 50 A, and 100 A continuous drain current at T_C = 100 °C. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency synchronous rectification and motor drive switching.

For engineers reviewing the SPD100N03S2L-04 datasheet, SPD100N03S2L-04 pinout, SPD100N03S2L-04 application, or SPD100N03S2L-04 equivalent, key selection criteria include its 4.2 mΩ on-resistance at 10 V gate drive, 100 A thermal current capability, TO252-5 footprint with dual-source/dual-drain terminals, and dv/dt ruggedness up to 6 kV/µs-critical for automotive DC-DC converters and BLDC inverter half-bridges.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V or 5 V microcontrollers, and its 67.5–89.7 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz in hard-switched topologies.

The MOSFET integrates a robust body diode with 46–58 ns reverse recovery time and 56–69 nC Q_rr, enabling reliable freewheeling in synchronous buck and H-bridge configurations without external Schottky supplementation. Thermal resistance R_thJC of 0.7–1.0 K/W allows sustained 100 A operation with minimal heatsinking when mounted on ≥6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems
R_DS(on) @ V_GS = 10 V	4.2 mΩ max - Enables ≤0.42 W conduction loss at 100 A, reducing thermal stress in high-current paths
I_D continuous @ T_C = 100 °C	100 A - Supports high-power motor control and battery protection circuits without forced air cooling
E_AS	325 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events in automotive ECUs
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in noisy high-di/dt environments like motor drives
T_j max	175 °C - Allows operation in under-hood automotive locations and sealed industrial enclosures
Q_g	67.5–89.7 nC - Balances switching speed and gate driver power loss for 100 kHz–200 kHz SMPS designs

Pinout & Package

Packaged in P-TO252-5-1 (surface-mount DPAK-5), this MOSFET uses a 5-pin configuration with pins 1 and 2 internally connected as gate inputs, pins 3 and 6 as parallel drain terminals, and pins 4 and 5 as parallel source terminals-enabling low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Pin 2	Gate input	Parallel gate connection reduces gate loop inductance and improves switching consistency
Pin 3 & Pin 6	Drain	Dual-drain terminals minimize voltage drop and thermal gradient across high-current paths
Pin 4 & Pin 5	Source	Dual-source layout lowers source inductance, critical for stable gate drive and EMI control
Pin 2 (n.c.)	No connect	Unused terminal; must remain unconnected per datasheet layout guidance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 3.3 V MCU systems
Avalanche-rated	Guaranteed single-pulse energy handling (E_AS = 325 mJ) without derating for inductive load transients
Low R_DS(on) × Q_g FOM	~280 Ω·nC - Optimized trade-off between conduction and switching losses in high-frequency converters
Enhanced thermal resistance	R_thJC = 0.7 K/W typ - Delivers >3× higher power density than standard TO252 MOSFETs at same footprint

Applications

Automotive DC-DC Converters

BLDC Motor Inverters

Use Scenario: 12 V–48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–150 kHz with 100 A peak current.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 6.5 mΩ devices, improving system efficiency from 92% to 94.5% at 5 kW.

Use Scenario: Phase-leg switch in 3-phase 5–10 kW e-bike or power tool motor controller.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with 200 A pulsed drain current capability.

Use Value: Dual-source/drain terminals and 6 kV/µs dv/dt rating prevent false triggering during rapid phase transitions under EMI-rich conditions.

Industrial Battery Protection

Server VRM High-Current Phases

Use Scenario: Solid-state main disconnect and overcurrent protection in 24 V/48 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Bidirectional current-sensing switch with integrated reverse polarity and short-circuit protection.

Use Value: 175 °C T_j max and avalanche rating allow safe operation during 10 ms fault clearing without thermal runaway.

Use Scenario: High-current phase leg in 400 A+ multiphase CPU/GPU VRMs for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck stage with 500 kHz switching frequency.

Use Value: 67.5 nC Q_g enables low gate driver loss while maintaining <10 ns rise/fall times for precise dead-time control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N03S4-02	R_DS(on) = 2.0 mΩ @ 10 V, but larger PG-HSOF-8 package and higher Q_g (105 nC)	Better conduction loss, but requires larger board area and stronger gate driver	Select when lowest R_DS(on) dominates over layout space and driver capability
IRL1404ZPBF	R_DS(on) = 4.8 mΩ @ 10 V, TO-220AB package, no avalanche rating, lower I_D (160 A pulsed only)	Lower cost, but unsuitable for automotive transient immunity or compact SMD layouts	Select for non-automotive industrial supplies where avalanche ruggedness is not required

Compared with IPB180N03S4-02 and IRL1404ZPBF, SPD100N03S2L-04 uniquely balances ultra-low R_DS(on), logic-level drive, surface-mount scalability, and automotive-grade transient robustness in a thermally optimized DPAK-5 footprint-making it optimal for space-constrained, high-reliability 24–48 V systems.

Availability

SPD100N03S2L-04 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor inverters, and industrial battery protection systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for SPD100N03S2L-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive 12 V/48 V architectures and industrial power conversion where thermal density and transient robustness are critical.

FAQ

What is the recommended PCB layout for thermal performance?

Mount SPD100N03S2L-04 on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² copper area connected to the drain pads (pins 3 and 6) using multiple thermal vias. Avoid splitting the source copper (pins 4 and 5); use solid plane routing to minimize inductance and ensure uniform current sharing between parallel terminals.

Does this MOSFET require a gate resistor for stability?

Yes-a 2.7 Ω gate resistor is specified in the datasheet for switching characterization (td(on)/td(off) tests). For production use, select 1–5 Ω based on EMI requirements and driver strength; values below 1 Ω risk ringing and overshoot due to low gate impedance and package inductance.

Can SPD100N03S2L-04 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical thermal mounting to avoid thermal runaway; up to four devices have been validated in 200 A automotive DC-DC modules.

Is the body diode suitable for continuous freewheeling?

Yes-the integrated body diode is rated for 100 A continuous forward current at T_C = 25 °C and exhibits 0.9–1.3 V V_SD at 80 A. Its 46–58 ns t_rr and soft recovery profile make it suitable for non-synchronous freewheeling in low-frequency (<50 kHz) applications, though synchronous rectification is preferred above 100 kHz.

SPD100N03S2L-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-5, DPAK (4 Leads + Tab), TO-252AD

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 89.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-5-1

SPD100N03S2L-04 FAQ

1.How can I place an order for SPD100N03S2L-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD100N03S2L-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD100N03S2L-04 reliable?

The price and inventory of SPD100N03S2L-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD100N03S2L-04 is usually 5 days.

3.What payment methods are accepted for SPD100N03S2L-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD100N03S2L-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD100N03S2L-04?

SPD100N03S2L-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD100N03S2L-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD100N03S2L-04?

For technical support, including SPD100N03S2L-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD100N03S2L-04 requirements.

6.How does Aetrix verify that SPD100N03S2L-04 is sourced from the original manufacturer or authorized distributors?

All SPD100N03S2L-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD100N03S2L-04 meets industry standards.

7.What is the process for return or replacement of SPD100N03S2L-04?

All SPD100N03S2L-04 units undergo pre-shipment inspection (PSI). If there is an issue with SPD100N03S2L-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD100N03S2L-04 part is unused and in its original packaging.

Return procedure for SPD100N03S2L-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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