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Infineon Technologies SPD100N03S2L04T

Part No.:
SPD100N03S2L04T
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Datasheet:
AetrixSPD100N03S2L04T.pdf
Description:
MOSFET N-CH 30V 100A TO252-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,406

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Product details

Overview

SPD100N03S2L04T from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO252-5-1 (DPAK) package, rated for 30 V VDS, 4.2 mΩ RDS(on) at VGS = 10 V and 50 A, and 100 A continuous drain current at TC = 100 °C. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × RDS(on) figure-of-merit for high-efficiency DC-DC and motor drive switching.

For engineers reviewing the SPD100N03S2L04T datasheet, SPD100N03S2L04T pinout, SPD100N03S2L04T application, or SPD100N03S2L04T equivalent, key selection criteria include its 4.2 mΩ on-resistance at 10 V gate drive, 100 A thermal current capability, logic-level gate threshold (1.2–2.0 V), integrated body diode with 46 ns reverse recovery time, and TO252-5 footprint compatibility with PCB cooling area optimization.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low RDS(on) while maintaining robust dv/dt immunity (6 kV/µs) and unclamped inductive switching (UIS) capability (325 mJ single-pulse EAS). Its gate plateau voltage of 3.6 V enables stable turn-on under noisy conditions.

The MOSFET supports synchronous rectification and high-frequency PWM operation up to 1 MHz, enabled by low Ciss (2500–3320 pF), Coss (980–1300 pF), and Qg (67.5–89.7 nC), with fast switching times (tr = 17–26 ns, tf = 24–36 ns) under 2.7 Ω gate resistance.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems
RDS(on) @ VGS=10 V4.2 mΩ max - Enables ≤1.05 W conduction loss at 50 A, critical for thermally constrained PCB layouts
ID continuous @ TC=100 °C100 A - Sustains high-current loads without derating when mounted on ≥6 cm² copper area
Qg67.5–89.7 nC - Determines gate driver power requirement and switching loss trade-off at 100 kHz–1 MHz
EAS325 mJ - Supports reliable operation in inductive load switching without external snubbers
Tj max175 °C - Allows operation in under-hood or sealed industrial enclosures without active cooling
RthJC0.7–1.0 K/W - Enables direct thermal path to heatsink via drain-connected copper pad

Pinout & Package

Package: PG-TO252-5-1 (DPAK variant with 5 terminals, 1.5 mm PCB thickness, FR4 substrate). Drain connected to exposed pad (pins 3 & 6); source connected to pins 4 & 5; gate at pin 1; pin 2 is no-connect but must be tied to gate on PCB per layout guidance.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateMain control input; requires low-impedance drive due to 89.7 nC total gate charge
Pin 2No-connect (NC)Must be electrically tied to pin 1 on PCB to reduce gate loop inductance
Pins 3 & 6DrainHigh-current output node; soldered to large copper area for thermal dissipation
Pins 4 & 5SourcePower return path; dual connection reduces source inductance in high-di/dt applications

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting
Avalanche-rated325 mJ single-pulse EAS ensures ruggedness in motor commutation and relay driving
Low thermal resistanceRthJC = 0.7 K/W allows >150 W power dissipation with minimal ΔT between die and heatsink
Optimized FOMQg × RDS(on) ≈ 375 nC·mΩ - balances switching loss and conduction loss for 100–500 kHz operation
dv/dt immuneRated for 6 kV/µs - suppresses false turn-on in high-noise half-bridge configurations

Applications

Automotive Body Control ModuleIndustrial DC Motor Drive

Use Scenario: High-side load switching for headlights, fans, and solenoids in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power switch controlling load current with PWM dimming and short-circuit protection.

Use Value: 100 A surge rating and 175 °C operation ensure reliability during cold cranking and under-hood thermal stress.

Use Scenario: H-bridge phase-leg switching in 24–48 V brushed DC motor controllers for factory automation.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery (trr = 46–58 ns) to minimize shoot-through risk.

Use Value: 4.2 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 6 mΩ MOSFETs at 50 A, improving system efficiency.

Server VRM High-Current PhaseTelecom 48 V Intermediate Bus Converter

Use Scenario: Multiphase buck converter power stage delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-current synchronous FET operating at 300–600 kHz with tight gate timing control.

Use Value: Low Qg/RDS(on) FOM minimizes combined switching + conduction loss, enabling >95% efficiency at full load.

Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters feeding 12 V/5 V POL stages.

IC Role / Device Role / Timing Role: Main switching transistor handling 48 V input with high dv/dt immunity and low Coss.

Use Value: 980–1300 pF Coss reduces capacitive turn-on loss, critical for ZVS operation above 200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF100N03L3PBFRDS(on) = 3.2 mΩ @ 10 V, but higher Qg (105 nC) and no avalanche ratingBetter conduction loss only in low-frequency, high-current apps where switching loss is secondarySelect if lowest RDS(on) dominates and UIS ruggedness is not required
STL100N3LLH6Same 30 V/4.2 mΩ rating but in PowerFLAT 5x6 package; lower RthJA (30 K/W) but no exposed drain padSuitable for space-constrained surface-mount designs where thermal vias replace heatsinkingSelect for ultra-thin consumer electronics where DPAK height is prohibitive

Compared with IRF100N03L3PBF and STL100N3LLH6, SPD100N03S2L04T uniquely combines avalanche ruggedness, low gate charge × RDS(on) FOM, and TO252-5 thermal performance-making it optimal for automotive and industrial switching where reliability under transient stress is non-negotiable.

Availability

SPD100N03S2L04T is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, and server VRM phases requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for SPD100N03S2L04T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion where thermal robustness and avalanche capability are mandatory.

FAQ

What is the maximum safe operating temperature for SPD100N03S2L04T?

The device supports continuous operation up to Tj = 175 °C, verified by design and validated through UIS testing. Derating begins above TC = 100 °C per the ID vs. TC curve on page 4 of the datasheet; thermal design must maintain junction temperature below 175 °C under worst-case ambient and power dissipation conditions.

Can SPD100N03S2L04T be used in synchronous rectification topologies?

Yes-the integrated body diode has trr = 46–58 ns and Qrr = 56–69 nC, enabling efficient synchronous rectification in buck and forward converters up to 500 kHz. Gate drive timing must account for Vplateau = 3.6 V to avoid cross-conduction during dead-time transitions.

Is pin 2 internally connected or truly unused?

Pin 2 is a no-connect terminal with no internal bond wire. However, the datasheet explicitly requires it to be externally tied to pin 1 (gate) on the PCB to minimize gate loop inductance and improve switching stability-this is a layout mandate, not optional.

Does SPD100N03S2L04T require a gate resistor for ESD protection?

No dedicated ESD resistor is needed-the device meets HBM Class 2 (≥2 kV) per JESD22-A114. However, a 2.7 Ω gate resistor is specified in dynamic test conditions to control dV/dt and ringing; values between 1 Ω and 10 Ω are typical for balancing switching speed and gate drive stability.

SPD100N03S2L04T Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
89.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3320 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-5-1

SPD100N03S2L04T FAQ

1.How can I place an order for SPD100N03S2L04T through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD100N03S2L04T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD100N03S2L04T reliable?

The price and inventory of SPD100N03S2L04T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD100N03S2L04T is usually 5 days.

3.What payment methods are accepted for SPD100N03S2L04T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD100N03S2L04T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD100N03S2L04T?

SPD100N03S2L04T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD100N03S2L04T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD100N03S2L04T?

For technical support, including SPD100N03S2L04T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD100N03S2L04T requirements.

6.How does Aetrix verify that SPD100N03S2L04T is sourced from the original manufacturer or authorized distributors?

All SPD100N03S2L04T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD100N03S2L04T meets industry standards.

7.What is the process for return or replacement of SPD100N03S2L04T?

All SPD100N03S2L04T units undergo pre-shipment inspection (PSI). If there is an issue with SPD100N03S2L04T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD100N03S2L04T part is unused and in its original packaging.

Return procedure for SPD100N03S2L04T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPD100N03S2L04T Tags

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