Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD11N10

Name: SPD11N10
Brand: Infineon Technologies
SKU: SPD11N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPD11N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD11N10.pdf

Description:: MOSFET N-CH 100V 10.5A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,345

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPD11N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 170 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 7.8 A, and 10.5 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C junction temperature - deployed in DC-DC converters, motor control stages, and industrial power switches.

For engineers reviewing the SPD11N10 datasheet, SPD11N10 pinout, SPD11N10 application, or SPD11N10 equivalent, key selection criteria include its P-TO252 (DPAK) package thermal resistance (R_thJC = 3 K/W), gate charge profile (Q_g = 14.6–18.3 nC), reverse diode forward voltage (V_SD = 0.93–1.25 V), and safe operating area under pulsed conditions.

Technical Context

This MOSFET uses silicon-based SIPMOS™ technology optimized for high-voltage switching with robust unclamped inductive switching (UIS) performance. Its 100 V V_(BR)DSS, 60 mJ single-pulse avalanche energy (E_AS), and 6 kV/µs dv/dt rating enable reliable operation in noisy, inductive-load environments such as solenoid drivers and relay interfaces.

The device exhibits a gate threshold voltage range of 2.1–4.0 V and a typical transconductance (g_fs) of 2.6–5.8 S. Its dynamic parameters - including C_iss = 320–400 pF, Q_gd = 7.8–9.8 nC, and t_r = 46–58 ns - support efficient high-frequency switching up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports 48 V and 60 V bus systems with margin against transients
R_DS(on) max	170 mΩ at V_GS = 10 V, I_D = 7.8 A - determines conduction loss in low-side switch applications
I_D cont	10.5 A at T_C = 25 °C - defines maximum steady-state current with heatsink
E_AS	60 mJ - quantifies ruggedness against inductive kickback without external snubbing
Q_g	14.6–18.3 nC - sets gate drive power requirement and switching speed trade-off
V_SD	0.93–1.25 V at I_F = 10.5 A - impacts freewheeling loss in synchronous rectification or H-bridge decay paths
R_thJC	3 K/W - enables direct thermal coupling to heatsink for high-power density layouts

Pinout & Package

P-TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 0–10 V logic-level signal; requires ≥2.1 V to initiate conduction
D	Drain terminal	High-side or low-side switching node; electrically and thermally connected to PCB copper pour
S	Source reference	Return path for load current; defines local ground reference for gate drive

Key Features

Feature	Design Value
Avalanche rated	60 mJ single-pulse E_AS - eliminates need for external clamping in inductive switching
dv/dt rated	6 kV/µs - prevents false turn-on during fast voltage transients in motor drives
175 °C operation	Extended junction temperature range - supports sealed enclosures and high-ambient industrial environments
N-channel enhancement mode	V_GS(th) = 2.1–4.0 V - compatible with standard 3.3 V/5 V microcontroller GPIO or dedicated gate drivers

Applications

Industrial Motor Control

DC-DC Converter Switch

Use Scenario: Driving brushed DC motors in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Low-side power switch controlling motor direction and PWM speed regulation.

Use Value: 10.5 A continuous current and 60 mJ avalanche energy ensure reliable commutation without snubber circuits.

Use Scenario: High-efficiency buck converter stage in 24 V industrial power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch operating at 200–500 kHz.

Use Value: 170 mΩ R_DS(on) and 14.6–18.3 nC Q_g balance conduction and switching losses for >92% efficiency.

Power Over Ethernet (PoE) PD

Automotive Body Control Module

Use Scenario: 802.3af/at powered device interface with inrush limiting and hot-swap protection.

IC Role / Device Role / Timing Role: Primary pass transistor in PoE classification and power management circuitry.

Use Value: 100 V V_DS withstands PoE transient surges; 6 kV/µs dv/dt rating suppresses false triggering during cable insertion.

Use Scenario: Load switching for interior lighting, window lifters, and HVAC actuators.

IC Role / Device Role / Timing Role: High-side or low-side protected switch replacing mechanical relays.

Use Value: 175 °C operation and automotive-grade reliability meet AEC-Q101 stress test requirements for under-hood use.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000 V V_DS, 0.85 Ω R_DS(on), TO-220 package	Higher voltage, lower current, higher R_DS(on); suited for flyback snubber or AC mains isolation	Select only if system requires >600 V blocking; not suitable for low-loss 48 V switching
IRF540NPBF	100 V V_DS, 44 mΩ R_DS(on), TO-220 package, no avalanche rating	Lower R_DS(on) but lacks UIS ruggedness and dv/dt immunity	Prefer for cost-sensitive, non-inductive loads; avoid in motor or solenoid drive without external protection

Compared with STP10NK100ZFP and IRF540NPBF, SPD11N10 uniquely combines 100 V rating, sub-200 mΩ on-resistance, certified avalanche capability, and surface-mount P-TO252 packaging - making it optimal for space-constrained, inductive-load industrial switching where reliability trumps raw R_DS(on) minimization.

Availability

SPD11N10 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, Power over Ethernet (PoE) powered devices, and automotive body electronics requiring stable component supply and long-term lifecycle assurance.

Supply support for SPD11N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SPD11N10 belongs to Infineon's SIPMOS™ power transistor product line, engineered for rugged, high-reliability switching in industrial automation, motor drives, and power conversion where avalanche tolerance and thermal stability are critical.

FAQ

Is SPD11N10 suitable for 48 V battery-powered motor drives?

Yes. With 100 V V_(BR)DSS, 10.5 A continuous current at 25 °C case temperature, and 60 mJ avalanche energy, SPD11N10 safely handles 48 V nominal systems including load dump transients and inductive kickback. Its P-TO252 package allows direct heatsinking for sustained 7–8 A operation at elevated ambient temperatures.

What gate drive voltage is required for full enhancement?

A minimum V_GS of 10 V is recommended to achieve the specified 170 mΩ R_DS(on). The gate threshold voltage ranges from 2.1 V to 4.0 V, so logic-level 3.3 V or 5 V drives will partially enhance the device but result in significantly higher on-resistance and conduction loss - use a dedicated gate driver for optimal performance.

Does SPD11N10 include an integrated body diode?

Yes. It features a monolithic, fast-recovery body diode with 10.5 A continuous forward current rating, 0.93–1.25 V forward voltage at 10.5 A, and 57–71 ns reverse recovery time. This diode supports freewheeling in H-bridge and buck converter topologies, though external Schottky diodes may be added for ultra-low-loss or high-frequency operation.

Can SPD11N10 replace SPU11N10 in existing designs?

Yes - SPD11N10 and SPU11N10 share identical electrical specifications, thermal characteristics, and marking (11N10), differing only in package: SPD11N10 uses P-TO252 (DPAK), while SPU11N10 uses P-TO251 (IPAK). Footprint and thermal design must be updated accordingly; both are pin-compatible with G-D-S pinout order and same die.

SPD11N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 18.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD11N10 FAQ

1.How can I place an order for SPD11N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD11N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD11N10 reliable?

The price and inventory of SPD11N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD11N10 is usually 5 days.

3.What payment methods are accepted for SPD11N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD11N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD11N10?

SPD11N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD11N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD11N10?

For technical support, including SPD11N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD11N10 requirements.

6.How does Aetrix verify that SPD11N10 is sourced from the original manufacturer or authorized distributors?

All SPD11N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD11N10 meets industry standards.

7.What is the process for return or replacement of SPD11N10?

All SPD11N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPD11N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD11N10 part is unused and in its original packaging.

Return procedure for SPD11N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.