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Infineon Technologies SPD22N08S2L-50
- Part No.:
- SPD22N08S2L-50
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SPD22N08S2L-50.pdf
- Description:
- MOSFET N-CH 75V 25A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,366
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Product details
Overview
SPD22N08S2L-50 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET rated for 75 V VDS, 25 A continuous drain current at TC = 22 °C, and 50 mΩ RDS(on) at VGS = 10 V / ID = 11 A. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-reliability DC-DC converter primary-side switching in industrial power supplies.
For engineers reviewing the SPD22N08S2L-50 datasheet, SPD22N08S2L-50 pinout, SPD22N08S2L-50 application, or SPD22N08S2L-50 equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), low RDS(on) at 4.5 V (48–65 mΩ), integrated body diode with 44–55 ns trr, and TO252-3 package thermal resistance of 1.34 K/W (typ) junction-to-case.
Technical Context
This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 640–850 pF Ciss, 124–165 pF Coss, and 49–74 pF Crss support efficient hard-switched operation up to several hundred kHz in synchronous rectification and motor control half-bridges.
The MOSFET's 25 nC total gate charge (Qg) and 3.3 V gate plateau voltage enable predictable turn-on/turn-off timing with standard gate drivers. Its 94 mJ single-pulse avalanche energy (EAS) and 7.5 mJ repetitive rating provide robustness against inductive load transients without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 75 V - supports 48 V nominal bus systems with 50 % safety margin for surge and ringing |
| RDS(on) @ 10 V | 38–50 mΩ - enables <1.2 W conduction loss at 22 A in TO252 package at 25 °C |
| RDS(on) @ 4.5 V | 48–65 mΩ - ensures full enhancement with 3.3 V or 5 V logic-level microcontroller outputs |
| Qg Total | 25–33 nC - determines gate driver current requirement (~1.5 A peak for 20 ns rise time) |
| tr/tf | 22–33 ns / 18–27 ns - supports >500 kHz switching in compact SMPS designs |
| EAS | 94 mJ - withstands worst-case inductive energy dump without failure in unclamped inductive loads |
| Tj max | 175 °C - allows operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
SPD22N08S2L-50 is housed in a surface-mount TO252-3 (DPAK) package with exposed drain pad for thermal management. The package has 3 terminals: Gate (G), Drain (D), Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Gate (G) | Control terminal; requires ≤±20 V drive; threshold 1.2–2.0 V enables direct MCU interface |
| Pin 2 (Middle) | Drain (D) | High-side switch node; connected to PCB copper pour for thermal dissipation (RthJC = 1.34 K/W typ) |
| Pin 3 (Right) | Source (S) | Power return path; tied to ground or low-side switch source; defines reference for gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.2–2.0 V ensures full enhancement with 3.3 V or 5 V controllers without level-shifting |
| Avalanche-rated | 94 mJ single-pulse EAS eliminates need for external clamping in relay or solenoid drive circuits |
| dv/dt ruggedness | 6 kV/µs rating prevents false turn-on during high-slew-rate commutation in half-bridge topologies |
| Integrated body diode | 44–55 ns trr and 0.9–1.3 V VSD support synchronous rectification in buck converters |
| High-temperature operation | Rated for continuous use up to 175 °C junction temperature in sealed or convection-limited enclosures |
Applications
| Motor Drive Half-Bridge | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving brushed DC motors in factory automation actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles bidirectional current up to 25 A continuous. Use Value: Low RDS(on) minimizes I²R heating during stall conditions; avalanche rating absorbs back-EMF spikes. | Use Scenario: Primary-side switch in isolated 48 V input → 12 V output flyback or forward converter for PLC power modules. IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–300 kHz with 75 V breakdown margin. Use Value: 25–33 nC Qg enables efficient gate driving with low-power ICs; 1.34 K/W RthJC sustains 75 W Ptot with minimal heatsinking. |
| LED Driver Power Stage | Solenoid & Relay Driver |
Use Scenario: Constant-current switching stage in high-bay LED luminaires with 36–60 V input range. IC Role / Device Role / Timing Role: PWM-controlled series pass element regulating current through multi-string LED arrays. Use Value: 48–65 mΩ RDS(on) at 4.5 V ensures stable regulation even with 3.3 V microcontroller gate drive. | Use Scenario: Solid-state replacement for mechanical relays controlling HVAC dampers or pneumatic valves. IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated avalanche energy absorption. Use Value: 94 mJ EAS safely dissipates stored inductor energy without snubber components or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB050N08N3 G | RDS(on) = 4.8 mΩ @ 10 V (lower), but TO263 package; higher cost and larger footprint | Better efficiency in high-current, space-unconstrained designs; not drop-in compatible due to package | Select when RDS(on) reduction justifies board area and cost increase |
| IRLR024ZPBF | RDS(on) = 45 mΩ @ 10 V, but only 55 V VDS; lower EAS (52 mJ); TO252-3 pin-compatible | Limited to ≤40 V systems; less robust under overvoltage transients | Acceptable for cost-sensitive 24 V applications where 75 V margin is unnecessary |
Compared with IPB050N08N3 G and IRLR024ZPBF, SPD22N08S2L-50 uniquely balances 75 V rating, logic-level drive, TO252-3 footprint, and 94 mJ avalanche capability-making it optimal for industrial 48 V power stages requiring reliability without package redesign.
Availability
SPD22N08S2L-50 is available at Aetrix Electronics and suitable for industrial motor drives, PLC power supplies, LED lighting ballasts, and solenoid control systems requiring stable component supply across extended production lifecycles.
Supply support for SPD22N08S2L-50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.
This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-reliability switching in industrial and embedded power conversion applications.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is 18 A per the datasheet's ID vs. TC curve (Page 4, Figure 2). This derating accounts for thermal resistance and safe junction temperature limits, ensuring reliable operation without exceeding 175 °C Tj.
Does SPD22N08S2L-50 require a gate resistor for stability?
Yes-a gate resistor (typically 5–15 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The 25–33 nC Qg and 640–850 pF Ciss make it susceptible to oscillation without proper gate control, especially in high-speed switching layouts.
Can this MOSFET replace a standard 60 V part in a 48 V system?
Yes-its 75 V VDS rating provides 56 % headroom above 48 V nominal, accommodating typical bus transients (e.g., ISO 7637-2 Pulse 1/2/5a) and layout-induced overshoot. The 6 kV/µs dv/dt rating further ensures immunity to false turn-on during fast voltage transitions.
Is the body diode suitable for synchronous rectification?
Yes-the body diode has 44–55 ns reverse recovery time (trr) and 66–83 nC Qrr, enabling use in synchronous buck topologies up to ~300 kHz. However, for highest efficiency, an external Schottky diode may be preferred in high-frequency, high-current designs due to lower forward voltage.
SPD22N08S2L-50 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 31µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
SPD22N08S2L-50 FAQ
1.How can I place an order for SPD22N08S2L-50 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPD22N08S2L-50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPD22N08S2L-50 reliable?
The price and inventory of SPD22N08S2L-50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD22N08S2L-50 is usually 5 days.
3.What payment methods are accepted for SPD22N08S2L-50?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD22N08S2L-50 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPD22N08S2L-50?
SPD22N08S2L-50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPD22N08S2L-50 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPD22N08S2L-50?
For technical support, including SPD22N08S2L-50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD22N08S2L-50 requirements.
6.How does Aetrix verify that SPD22N08S2L-50 is sourced from the original manufacturer or authorized distributors?
All SPD22N08S2L-50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD22N08S2L-50 meets industry standards.
7.What is the process for return or replacement of SPD22N08S2L-50?
All SPD22N08S2L-50 units undergo pre-shipment inspection (PSI). If there is an issue with SPD22N08S2L-50, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPD22N08S2L-50 part is unused and in its original packaging.
Return procedure for SPD22N08S2L-50:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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