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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD26N06S2L-35

Name: SPD26N06S2L-35
Brand: Infineon Technologies
SKU: SPD26N06S2L-35
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD26N06S2L-35

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD26N06S2L-35.pdf

Description:: MOSFET N-CH 55V 30A TO252-3

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Product details

Overview

SPD26N06S2L-35 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET rated for 55 V V_DS, 35 mΩ R_DS(on) at V_GS = 4.5 V, and 30 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and operation up to 175 °C - deployed in automotive DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the SPD26N06S2L-35 datasheet, SPD26N06S2L-35 pinout, SPD26N06S2L-35 application, or SPD26N06S2L-35 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, SOA robustness under repetitive switching, thermal resistance (R_thJC = 1.45 K/W typ), and integrated body diode recovery performance (Q_rr = 36–45 nC).

Technical Context

This OptiMOS™ device uses trench-gate silicon technology optimized for low gate charge (Q_g = 18–24 nC) and fast switching (t_r = 21–32 ns, t_f = 20–30 ns). Its gate plateau voltage is 3.9 V, enabling reliable turn-on with standard logic-level drivers.

The MOSFET integrates a robust intrinsic body diode with reverse recovery time t_rr = 40–50 ns and Q_rr = 36–45 nC at V_R = 30 V, supporting synchronous rectification and bidirectional energy transfer in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 4.5 V	35 mΩ max - enables efficient operation with 3.3 V or 5 V microcontroller GPIO drive
I_D continuous @ T_C = 25 °C	30 A - supports high-current loads without external heatsinking in TO252-3 package
E_AS	80 mJ single-pulse avalanche energy - ensures ruggedness against inductive load switching transients
dv/dt rating	6 kV/µs - suppresses false turn-on in high-noise motor drive and SMPS environments
R_thJC	1.45 K/W typical - enables direct thermal coupling to PCB copper pour for passive cooling
Q_g	18–24 nC - reduces gate driver power loss and simplifies driver IC selection

Pinout & Package

SPD26N06S2L-35 is housed in a surface-mount P-TO252-3-11 (DPAK) package with exposed drain pad for thermal conduction. The case outline conforms to JEDEC TO-252 standard, with 3 terminals: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts logic-level voltage (1.2–2 V threshold); requires <24 nC total charge for full enhancement
D	Drain connection	Exposed metal pad - primary thermal path to PCB; electrically connected to internal die drain
S	Source reference	Common return node for gate drive and load current; ties to power ground in low-side switch configuration

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V/5 V systems
Avalanche-rated ruggedness	80 mJ single-pulse E_AS - withstands unclamped inductive switching without derating
High-temperature operation	Rated for continuous use at T_j = 175 °C - suitable for under-hood automotive and sealed industrial enclosures
Fast body diode recovery	t_rr = 40–50 ns, Q_rr = 36–45 nC - minimizes cross-conduction loss in synchronous buck and half-bridge converters
Low output capacitance	C_oss = 138–180 pF - reduces switching loss during hard-commutation transitions

Applications

Automotive DC-DC Converters

Industrial Motor Control

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in engine control units and ADAS modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in high-frequency (200–500 kHz) buck converter.

Use Value: 35 mΩ R_DS(on) at 4.5 V drive reduces conduction loss by >30% vs. non-logic-level alternatives at same gate voltage.

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: High-speed switching element with controlled dv/dt to prevent shoot-through.

Use Value: 6 kV/µs dv/dt rating ensures immunity to parasitic ringing on long PCB traces between gate driver and MOSFET.

Power Over Ethernet (PoE) PSE

UPS Battery Switching

Use Scenario: Power sourcing equipment (PSE) detection and classification circuitry per IEEE 802.3af/at.

IC Role / Device Role / Timing Role: Current-limited hot-swap switch controlling power delivery to PD port.

Use Value: Avalanche rating allows safe handling of cable discharge events without external TVS clamping.

Use Scenario: Bidirectional battery isolation switch in 48 V telecom UPS systems.

IC Role / Device Role / Timing Role: Low-loss pass transistor enabling efficient charge/discharge path control.

Use Value: Integrated body diode with Q_rr ≤ 45 nC permits zero-voltage switching in synchronous buck-boost battery management stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	R_DS(on) = 2.2 mΩ @ 10 V (lower), but 42 mΩ @ 4.5 V (higher); Q_g = 32 nC (higher)	Higher gate drive demand; less suitable for 3.3 V MCU control	Prefer when 10 V gate drive is available and ultra-low R_DS(on) dominates design priority
IRLZ44NPBF	R_DS(on) = 28 mΩ @ 5 V, but only rated to 55 V and 49 A; no specified avalanche rating or dv/dt spec	Lacks documented avalanche ruggedness and high-temp reliability data	Acceptable for cost-sensitive consumer-grade designs where transient stress is minimal

Compared with STL220N6LF8AG and IRLZ44NPBF, SPD26N06S2L-35 delivers superior balance of low 4.5 V R_DS(on), guaranteed avalanche performance, and 175 °C operation - making it preferred for automotive and industrial applications requiring validated robustness.

Availability

SPD26N06S2L-35 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor control systems, and PoE power sourcing equipment requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for SPD26N06S2L-35 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems where logic-level drive and thermal resilience are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The SPD26N06S2L-35 is rated for T_j = 175 °C maximum. At T_C = 25 °C, I_D = 30 A; this drops to ~22 A at T_C = 100 °C per the ID vs. TC curve on page 4. Derating is linear above 25 °C and governed by R_thJC = 1.45 K/W typ and package thermal limits.

Is the body diode suitable for synchronous rectification?

Yes - the intrinsic body diode has t_rr = 40–50 ns and Q_rr = 36–45 nC at V_R = 30 V, IF = 26 A, and di/dt = 100 A/µs. These values enable efficient synchronous rectification in buck and half-bridge topologies up to ~300 kHz without excessive switching loss.

Does SPD26N06S2L-35 require a gate resistor for stability?

A gate resistor (typically 10–22 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. The datasheet specifies switching times using R_G = 11 Ω; omitting it risks oscillation and increased EMI, especially at high dv/dt (6 kV/µs rated).

How does R_DS(on) vary with temperature and gate voltage?

R_DS(on) increases with junction temperature - from ~27 mΩ at 25 °C to ~70 mΩ at 175 °C (page 9). At fixed T_j, it decreases with higher V_GS: 35 mΩ max at 4.5 V, 27 mΩ max at 10 V. This behavior is confirmed in Figures 6 and 7 of the datasheet.

SPD26N06S2L-35 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD26N06S2L-35 FAQ

1.How can I place an order for SPD26N06S2L-35 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD26N06S2L-35 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD26N06S2L-35 reliable?

The price and inventory of SPD26N06S2L-35 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD26N06S2L-35 is usually 5 days.

3.What payment methods are accepted for SPD26N06S2L-35?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD26N06S2L-35 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD26N06S2L-35?

SPD26N06S2L-35 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD26N06S2L-35 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD26N06S2L-35?

For technical support, including SPD26N06S2L-35 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD26N06S2L-35 requirements.

6.How does Aetrix verify that SPD26N06S2L-35 is sourced from the original manufacturer or authorized distributors?

All SPD26N06S2L-35 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD26N06S2L-35 meets industry standards.

7.What is the process for return or replacement of SPD26N06S2L-35?

All SPD26N06S2L-35 units undergo pre-shipment inspection (PSI). If there is an issue with SPD26N06S2L-35, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD26N06S2L-35 part is unused and in its original packaging.

Return procedure for SPD26N06S2L-35:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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