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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N03S2L-07

Name: SPD30N03S2L-07
Brand: Infineon Technologies
SKU: SPD30N03S2L-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30N03S2L-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N03S2L-07.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Inventory:8,094

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Product details

Overview

SPD30N03S2L-07 from Infineon Technologies is a 30 V, 30 A N-channel logic-level OptiMOS™ power MOSFET in TO-252 (DPAK) package, featuring 6.7 mΩ R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and avalanche-rated operation. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for telecom power supplies.

For engineers reviewing the SPD30N03S2L-07 datasheet, SPD30N03S2L-07 pinout, SPD30N03S2L-07 application, or SPD30N03S2L-07 equivalent, key selection criteria include R_DS(on) at 4.5 V (7.4 mΩ typ), gate charge (Q_g = 51–68 nC), thermal resistance (R_thJC = 0.7–1.1 K/W), and dv/dt rating (6 kV/µs).

Technical Context

This device employs an optimized trench-gate silicon process to achieve low gate charge × R_DS(on) figure-of-merit (FOM) and superior thermal performance. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The MOSFET integrates a robust body diode with t_rr = 41–51 ns and Q_rr = 46–58 nC, supporting high-frequency hard-switched topologies. Avalanche energy rating (E_AS = 250 mJ) and dv/dt immunity (6 kV/µs) ensure ruggedness in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with margin.
R_DS(on) @ V_GS = 10 V	6.7 mΩ max - Enables ≤1.5 W conduction loss at 30 A continuous current.
R_DS(on) @ V_GS = 4.5 V	9.8 mΩ max - Ensures reliable turn-on with standard logic-level drivers (e.g., MCU GPIO).
Q_g	68 nC max - Determines gate drive power requirement and switching speed in 100–500 kHz converters.
T_j max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments.
E_AS	250 mJ - Withstands single-pulse inductive energy without failure in motor gate-drive or solenoid control.
dv/dt rating	6 kV/µs - Prevents spurious turn-on during fast voltage transients in half-bridge configurations.

Pinout & Package

Package: TO-252-3-11 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven via series resistor to damp ringing.
Pin 3 (Drain)	Power output	Exposed copper tab - must be soldered to ≥6 cm² copper pour for R_thJA ≤50 K/W.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V controllers without external level shifters.
Low FOM (Q_g × R_DS(on))	~360–450 mΩ·nC - Reduces combined switching + conduction losses in high-frequency SMPS.
Avalanche-rated	250 mJ single-pulse E_AS - Eliminates need for external snubbers in relay or motor coil driving.
Enhanced thermal resistance	R_thJC = 0.7 K/W typ - Allows >100 W power dissipation with minimal heatsink in compact layouts.
dv/dt immune	6 kV/µs rated - Prevents false triggering in noisy half-bridge or phase-leg applications.

Applications

DC-DC Buck Converter

Automotive Body Control Module

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in server VRMs.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–500 kHz with 30 A peak current.

Use Value: 6.7 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 8 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Power distribution to door locks, window lifts, and lighting in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Low-side load switch controlled by CAN/LIN microcontroller GPIO pins.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V MCU outputs, eliminating external driver ICs and saving board space.

Industrial Motor Gate Driver

Telecom Hot-Swap Circuit

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-speed switching element with 6 kV/µs dv/dt immunity to suppress shoot-through risk.

Use Value: Robust avalanche rating (250 mJ) absorbs inductive kickback during PWM dead-time, increasing system reliability without added clamping diodes.

Use Scenario: Inrush current limiting and fault isolation in 48 V telecom rectifier shelves.

IC Role / Device Role / Timing Role: Main pass transistor in hot-swap controller IC reference design (e.g., TPS2375x).

Use Value: 175 °C T_j max and 136 W P_tot support sustained 30 A operation under ambient temperatures up to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 62 nC; TO-220 package	Higher R_thJA (62 K/W) limits power density; requires heatsink for >15 A continuous	Prefer when through-hole mounting or legacy footprint compatibility is required.
BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 42 nC; SuperSO8 package	Lower voltage rating (40 V); not avalanche-rated; unsuitable for inductive switching stress	Choose only for ultra-low-loss 24 V buck stages where avalanche robustness is not needed.

Compared with IRL3803PbF and BSC014N04LS6, SPD30N03S2L-07 uniquely balances low R_DS(on), logic-level drive, avalanche ruggedness, and DPAK thermal performance-making it optimal for space-constrained, high-reliability 24–30 V industrial and telecom power stages.

Availability

SPD30N03S2L-07 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor drives, and telecom hot-swap circuits requiring stable component supply across multi-year production cycles.

Supply support for SPD30N03S2L-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-current switching in 12–24 V power conversion and load switching applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 24 A, as defined by the derating curve on Page 4 of the datasheet. This value assumes proper PCB thermal design with ≥6 cm² copper area and accounts for R_DS(on) increase with temperature.

Does SPD30N03S2L-07 require a gate resistor for safe operation?

Yes-a gate resistor (typically 5–22 Ω) is required to control dV/dt and prevent oscillation during switching. The device's gate resistance (R_G = 2.3 Ω typ) alone is insufficient to damp ringing caused by PCB trace inductance and driver output impedance.

Can this MOSFET replace a standard 30 V Schottky diode in synchronous rectification?

Yes-its low R_DS(on) (6.7 mΩ) yields lower forward voltage drop than a 30 V Schottky at currents above ~3 A. Combined with its integrated body diode (V_SD = 0.9–1.3 V), it enables efficient synchronous rectification in buck and flyback topologies up to 500 kHz.

Is the TO-252 package lead-free and RoHS-compliant?

Yes-SPD30N03S2L-07 is manufactured per Infineon's qualified lead-free process and meets RoHS Directive 2011/65/EU requirements. The package uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level MSL3.

SPD30N03S2L-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD30N03S2L-07 FAQ

1.How can I place an order for SPD30N03S2L-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N03S2L-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N03S2L-07 reliable?

The price and inventory of SPD30N03S2L-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N03S2L-07 is usually 5 days.

3.What payment methods are accepted for SPD30N03S2L-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N03S2L-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N03S2L-07?

SPD30N03S2L-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N03S2L-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N03S2L-07?

For technical support, including SPD30N03S2L-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N03S2L-07 requirements.

6.How does Aetrix verify that SPD30N03S2L-07 is sourced from the original manufacturer or authorized distributors?

All SPD30N03S2L-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N03S2L-07 meets industry standards.

7.What is the process for return or replacement of SPD30N03S2L-07?

All SPD30N03S2L-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N03S2L-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N03S2L-07 part is unused and in its original packaging.

Return procedure for SPD30N03S2L-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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