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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N03S2L10GBTMA1

Name: SPD30N03S2L10GBTMA1
Brand: Infineon Technologies
SKU: SPD30N03S2L10GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30N03S2L10GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N03S2L10GBTMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

SPD30N03S2L10GBTMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO252-3 package, rated for 30 V V_DS, 10 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25 °C. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPD30N03S2L10GBTMA1 datasheet, SPD30N03S2L10GBTMA1 pinout, SPD30N03S2L10GBTMA1 application, or SPD30N03S2L10GBTMA1 equivalent, key selection criteria include its 10 mΩ on-resistance at 10 V gate drive, 4.5 V logic-level compatibility, 150 mJ single-pulse avalanche energy, and thermal resistance of 1.5 K/W (junction-to-case), critical for thermally constrained board-level designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology to achieve low conduction losses while maintaining robust switching performance. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers, and its 120 nC total gate charge supports efficient high-frequency operation up to 500 kHz in synchronous buck stages.

The device integrates a fast-recovery body diode with t_rr = 31–39 ns and Q_rr = 29–37 nC, enabling hard-switched topologies without external freewheeling diodes. Its dv/dt immunity of 6 kV/µs and guaranteed avalanche capability support rugged operation in inductive load switching and automotive load-dump conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 24 V nominal bus systems with margin for transients and ripple.
R_DS(on) @ V_GS = 10 V	7.8–10 mΩ - Enables ≤ 9 W conduction loss at 30 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4.5 V	11.2–14.6 mΩ - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs.
Q_g Total	31.4–41.8 nC - Determines gate driver power demand and switching loss in 100–500 kHz SMPS.
E_AS Single-Pulse	150 mJ - Withstands inductive energy release during overcurrent events without failure.
T_j Max	175 °C - Allows operation in under-hood automotive or sealed industrial enclosures.
R_thJC	1.5 K/W - Enables direct thermal coupling to copper pour or heatsink for >70 W dissipation.

Pinout & Package

SPD30N03S2L10GBTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package conforms to JEDEC MO-247 and supports reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Connected to ground or low-side reference; carries full load current and must be routed with low-inductance trace.
Pin 2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <100 nA leakage; sensitive to ESD and requires RC snubber for ringing suppression.
Pin 3 (Drain)	Main power output terminal	Internally connected to large copper pad; serves as primary thermal path and high-current output node.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS ≥ 4.5 V, compatible with 3.3 V and 5 V controllers without level-shifting.
Avalanche-rated operation	150 mJ single-pulse energy handling enables robustness in unclamped inductive switching.
Low gate charge × R_DS(on)	Figure-of-merit < 150 mΩ·nC - balances switching and conduction losses for high-efficiency 100–300 kHz converters.
Enhanced dv/dt immunity	6 kV/µs rated - prevents false turn-on in noisy motor drive or automotive environments.
RoHS-compliant lead plating	Pb-free finish with qualified reflow profile compatibility for industrial and automotive manufacturing.

Applications

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-current 12 V to 3.3 V/5 V conversion for ADAS camera modules and infotainment processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz buck regulator, replacing Schottky diode to improve efficiency by 3–5 %.

Use Value: 10 mΩ R_DS(on) reduces conduction loss to < 9 W at 30 A, enabling compact layout without forced air cooling.

Use Scenario: Load switching for headlights, HVAC actuators, and window lift motors in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN-linked microcontroller with PWM dimming capability.

Use Value: 175 °C T_j max and 150 mJ E_AS ensure reliability during cold-crank and load-dump transients per ISO 7637-2.

Industrial Motor Drive Half-Bridge

Server VRM Power Stage

Use Scenario: 24 V BLDC motor control in factory automation conveyors and robotic joints.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 5.4 Ω source resistance.

Use Value: 31–39 ns reverse recovery time and 29–37 nC Q_rr minimize shoot-through risk and commutation loss during PWM dead-time.

Use Scenario: Multiphase 48 V to 1 V VRM for AI accelerators and Xeon Scalable CPUs.

IC Role / Device Role / Timing Role: High-current phase-leg MOSFET in 600 kHz interleaved buck converter with digital PWM controller.

Use Value: 1.5 K/W R_thJC allows direct mounting to VRM heatsink, sustaining 30 A continuous current with ΔT < 45 K.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V; higher Q_g (51 nC); no specified avalanche rating	Limited to non-automotive, non-inductive loads due to missing E_AS spec	Choose only if cost sensitivity outweighs ruggedness requirements and thermal margin exists.
STL37N3LLH6	R_DS(on) = 9.5 mΩ @ 10 V; lower Q_gd (9.5 nC); PG-TO263-3 package	Requires larger PCB footprint and different thermal interface; better for ultra-low-loss but less space-constrained designs	Select when lower switching loss and higher peak current (37 A) justify TO-263 mechanical and thermal trade-offs.

Compared with IRL3803PBF and STL37N3LLH6, SPD30N03S2L10GBTMA1 uniquely combines 10 mΩ on-resistance, 150 mJ avalanche rating, and PG-TO252-3 form factor-making it optimal for space-constrained, thermally demanding, and transient-rugged applications where both efficiency and reliability are non-negotiable.

Availability

SPD30N03S2L10GBTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server VRMs, and DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for SPD30N03S2L10GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 2nd generation power transistor family, engineered for high-efficiency, high-reliability switching in 12–48 V systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 18 A, derived from the derating curve on page 3 of the datasheet. This reflects thermal limitation imposed by the 1.5 K/W R_thJC and 175 °C T_jmax, ensuring safe operation without exceeding junction temperature limits under sustained load.

Does SPD30N03S2L10GBTMA1 require a gate resistor for stability?

Yes-a gate resistor between 5 Ω and 22 Ω is recommended to dampen ringing caused by gate-drain capacitance and PCB inductance. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 5.4 Ω, confirming that this value provides optimal trade-off between switching speed and oscillation suppression in typical layouts.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has t_rr = 31–39 ns and Q_rr = 29–37 nC, making it unsuitable for high-frequency synchronous rectification where reverse recovery losses dominate. It is designed for freewheeling in hard-switched topologies, not for active rectification; external Schottky or GaN FETs are preferred for true synchronous operation above 200 kHz.

Can SPD30N03S2L10GBTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 9) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to prevent dynamic imbalance; the datasheet confirms stable parallel operation up to four devices with proper PCB design.

SPD30N03S2L10GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD30N03S2L10GBTMA1 FAQ

1.How can I place an order for SPD30N03S2L10GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N03S2L10GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N03S2L10GBTMA1 reliable?

The price and inventory of SPD30N03S2L10GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N03S2L10GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD30N03S2L10GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N03S2L10GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N03S2L10GBTMA1?

SPD30N03S2L10GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N03S2L10GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N03S2L10GBTMA1?

For technical support, including SPD30N03S2L10GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N03S2L10GBTMA1 requirements.

6.How does Aetrix verify that SPD30N03S2L10GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD30N03S2L10GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N03S2L10GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD30N03S2L10GBTMA1?

All SPD30N03S2L10GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N03S2L10GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N03S2L10GBTMA1 part is unused and in its original packaging.

Return procedure for SPD30N03S2L10GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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