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Infineon Technologies SPD30N06S2L-13

Part No.:
SPD30N06S2L-13
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSPD30N06S2L-13.pdf
Description:
MOSFET N-CH 55V 30A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,180

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Product details

Overview

SPD30N06S2L-13 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-252 (DPAK) package, rated for 55 V VDS, 13 mΩ RDS(on) at VGS = 4.5 V, and 30 A continuous drain current at TC = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in DC-DC converters, motor control H-bridges, and high-efficiency power switches.

For engineers reviewing the SPD30N06S2L-13 datasheet, SPD30N06S2L-13 pinout, SPD30N06S2L-13 application, or SPD30N06S2L-13 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), low RDS(on) at 4.5 V, avalanche ruggedness (EAS = 240 mJ), thermal resistance (RthJC = 0.69 K/W typ), and TO-252 footprint suitability for surface-mount power stages.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 12.5–17 mΩ RDS(on) at 4.5 V enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The MOSFET integrates a robust body diode with trr = 33–41 ns and Qrr = 71–90 nC, supporting synchronous rectification and hard-switched topologies. Its 6 kV/µs dv/dt rating ensures noise immunity in high-speed inductive load switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating55 V - supports 48 V nominal bus systems with 15% margin for transients
RDS(on) @ 4.5 V12.5–17 mΩ - enables efficient 30 A switching at logic-level gate drive
ID Continuous30 A @ TC = 25 °C - requires heatsinking above ~60 °C case temperature
EAS240 mJ - withstands single-pulse inductive energy without failure
Qg52–69 nC - determines gate driver power requirement and switching loss trade-off
tr/tf14–21 ns / 13–20 ns - supports >500 kHz switching in SMPS designs
VGS(th)1.2–2.0 V - ensures reliable turn-on with 3.3 V or 5 V logic outputs
RthJC0.69 K/W typ - allows ~100 W power dissipation with modest heatsink (ΔT = 70 K)

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeAccepts logic-level voltage (≥3.4 V plateau) to fully enhance channel; low input capacitance (Ciss = 1725–2300 pF) reduces driver loading
Drain (D)High-side or low-side power pathExposed copper tab - must be soldered to PCB copper pour ≥6 cm² for RthJA ≤ 50 K/W; electrically connected to internal die backside
Source (S)Reference node for gate driveProvides return path for load current and gate drive loop; critical for minimizing switching noise in high-di/dt applications

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) max = 2.0 V and RDS(on) specified at 4.5 V - eliminates need for gate driver ICs in MCU-based systems
Avalanche-rated operationEAS = 240 mJ (single pulse) - enables robustness in inductive switching without external snubbers
High dv/dt immunity6 kV/µs - prevents false turn-on during fast voltage transients in motor drives and inverters
175 °C maximum junction temperatureEnables operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves
Optimized body diodetrr = 33–41 ns, Qrr = 71–90 nC - reduces reverse recovery loss and EMI in synchronous rectifier and half-bridge configurations

Applications

Brushless DC Motor Control48 V DC-DC Buck Converter

Use Scenario: Three-phase inverter stage driving BLDC motors in e-bikes and power tools.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; synchronized with high-side gate signals.

Use Value: 13 mΩ RDS(on) at 4.5 V minimizes conduction loss at 20–30 A peak phase current; avalanche rating handles back-EMF spikes.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled or controller-synchronized signal.

Use Value: Low Qrr and fast tr/tf reduce switching loss and EMI; TO-252 thermal performance sustains 95% efficiency at 25 A output.

Automotive Body Control ModuleIndustrial PLC Output Stage

Use Scenario: Load switch for solenoids, relays, and LED arrays in 12/24 V vehicle subsystems.

IC Role / Device Role / Timing Role: High-side or low-side protected switch with integrated diagnostics via current sensing.

Use Value: Logic-level compatibility enables direct connection to automotive MCUs; 175 °C rating meets under-hood ambient requirements.

Use Scenario: Solid-state output driver for 24 V DC industrial actuators and sensors.

IC Role / Device Role / Timing Role: Final-stage power switch in modular I/O card; controlled via opto-isolated digital input.

Use Value: Avalanche ruggedness absorbs inductive kickback from valve coils; TO-252 footprint simplifies automated assembly and thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL30DN6LF7AGRDS(on) = 14.5 mΩ @ 4.5 V; lower Qg (45 nC); same TO-252 packageSlightly lower switching loss but reduced avalanche energy (EAS = 180 mJ)Prefer when gate drive strength is limited and inductive stress is moderate
IRLR7843PbFRDS(on) = 12.8 mΩ @ 4.5 V; higher Ciss (2500 pF); 150 °C TjmaxLimited high-temp reliability in sealed enclosures; no dv/dt rating specifiedChoose only if cost sensitivity outweighs thermal and noise immunity requirements

Compared with STL30DN6LF7AG and IRLR7843PbF, SPD30N06S2L-13 delivers superior avalanche ruggedness and dv/dt immunity - critical for motor drives and unregulated inductive loads - while maintaining competitive conduction and switching performance in TO-252 form factor.

Availability

SPD30N06S2L-13 is available at Aetrix Electronics and suitable for brushless DC motor control, 48 V DC-DC conversion, and industrial PLC output stages requiring stable component supply and long-term production continuity.

Supply support for SPD30N06S2L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive, industrial, and computing power systems.

FAQ

Is SPD30N06S2L-13 suitable for 3.3 V microcontroller gate drive?

Yes. With VGS(th) ranging from 1.2 V to 2.0 V and RDS(on) guaranteed at 4.5 V, it achieves full enhancement using standard 3.3 V GPIO outputs - verified by 12.5–17 mΩ on-resistance and 30 A current capability under those conditions.

What is the recommended PCB layout for thermal performance?

Mount the TO-252 drain tab directly to a ≥6 cm² copper area on inner or outer layer, using multiple thermal vias to internal ground/power planes. The datasheet specifies RthJA = 50 K/W under these conditions - critical to sustain 30 A continuous current without exceeding 175 °C junction temperature.

Does SPD30N06S2L-13 have built-in ESD protection?

No. It has no integrated ESD protection diodes. Gate-source leakage is specified at ±20 V maximum, and handling requires standard MOSFET ESD precautions - including grounded workstations, anti-static packaging, and current-limiting gate resistors during prototyping.

Can this MOSFET replace a standard 55 V part in an existing TO-252 design?

Yes - it shares identical TO-252-3 mechanical dimensions and pinout (G-D-S). Electrical compatibility depends on gate drive voltage: verify that the existing 10 V gate driver is not over-spec'ed, since SPD30N06S2L-13 is optimized for 4.5 V logic-level operation and exhibits lower RDS(on) at that voltage than typical 10 V parts.

SPD30N06S2L-13 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
69 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

SPD30N06S2L-13 FAQ

1.How can I place an order for SPD30N06S2L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N06S2L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N06S2L-13 reliable?

The price and inventory of SPD30N06S2L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N06S2L-13 is usually 5 days.

3.What payment methods are accepted for SPD30N06S2L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N06S2L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N06S2L-13?

SPD30N06S2L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N06S2L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N06S2L-13?

For technical support, including SPD30N06S2L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N06S2L-13 requirements.

6.How does Aetrix verify that SPD30N06S2L-13 is sourced from the original manufacturer or authorized distributors?

All SPD30N06S2L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N06S2L-13 meets industry standards.

7.What is the process for return or replacement of SPD30N06S2L-13?

All SPD30N06S2L-13 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N06S2L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N06S2L-13 part is unused and in its original packaging.

Return procedure for SPD30N06S2L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPD30N06S2L-13 Tags

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